Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (CT)
A method of controlling threshold voltage shift that includes forming a first set of channel semiconductor regions on a first portion of a substrate, and forming a second set of channel semiconductor regions on a second portion of the substrate. A gate structure is formed on the first set of channel semiconductor regions and the second set of channel, wherein the gate structure extends from a first portion of the substrate over an isolation region to a second portion of the substrate. A gate cut region is formed in the gate structure over the isolation region. An oxygen scavenging metal containing layer is formed on sidewalls of the gate cut region.
1. A semiconductor device comprising:
a first set of semiconductor fin structures on a first portion of a substrate;
a second set of semiconductor fin structures on a second portion of the substrate; an isolation region separating the first and second portions of the substrate;
a first gate structure on the first set of semiconductor fin structures, and a second gate structure on the second set of semiconductor fin structures;
a gate cut isolation region present over the isolation region; and
an oxygen scavenging metal containing layer on sidewalls of the gate cut isolation region that separates the gate cut isolation region from the first and second gate structures.
2. The semiconductor device of claim 1 , wherein the at least one of the first gate structure and the second gate structure comprises a gate dielectric and a work function metal gate conductor.
3. The semiconductor device of claim 1 , wherein the oxygen scavenging metal containing layer is selected from the group consisting of titanium, aluminum, titanium aluminum, titanium aluminum carbon and combinations thereof.
4. The semiconductor device of claim 1 , further comprising a dielectric fill within the gate cut region.
5. The semiconductor device of claim 1 , wherein the semiconductor device is an n-type fin field effect transistor.
6. The semiconductor device of claim 1 , wherein the semiconductor device is a p-type fin field effect transistor.
7. A semiconductor device comprising:
a first set of nanosheets on a first portion of a substrate;
a second set of nanosheets on a second portion of the substrate;
an isolation region separating the first and second portions of the substrate;
a first gate structure present on the first set of nanosheets;
a second gate structure present on the second set of nanosheets;
a gate cut isolation region present over the isolation region; and
an oxygen scavenging metal containing layer is present on sidewalls of the gate cut isolation region that separates the gate cut isolation region from the first and second gate structures.
8. The semiconductor device of claim 7 , wherein the at least one of the first gate structure and the second gate structure comprises a gate dielectric and a work function metal gate conductor.
9. The semiconductor device of claim 7 , wherein the oxygen scavenging metal containing layer is selected from the group consisting of titanium, aluminum, titanium aluminum, titanium aluminum carbon and combinations thereof.
10. The semiconductor device of claim 7 , further comprising a dielectric fill within the gate cut region.
11. The semiconductor device of claim 10 , wherein the dielectric fill comprises silicon nitride.
12. The semiconductor device of claim 7 , wherein the semiconductor device is an n-type field effect transistor.
13. The semiconductor device of claim 7 , wherein the semiconductor device is a p-type field effect transistor.