Package structure and manufacturing method thereof

1. A package structure comprising:

a substrate;

a semiconductor package over the substrate, wherein the semiconductor package has an uneven top surface;

a thermal conductive gel covering the uneven top surface of the semiconductor package;

a thermal conductive film over the uneven top surface of the semiconductor package and the thermal conductive gel, wherein a thermal conductivity of the thermal conductive film is higher than a thermal conductivity of the thermal conductive gel; and

a heat spreader over the thermal conductive film, wherein the thermal conductive film is surrounded by the heat spreader.

2. The package structure as claimed in claim 1 , wherein the semiconductor package comprises an integrated circuit and a plurality of components, wherein the integrated circuit is disposed between the substrate and the plurality of components, wherein the thermal conductive gel is disposed between the plurality of components over the integrated circuit.

3. The package structure as claimed in claim 2 , wherein a top surface of the thermal conductive gel is substantially coplanar with top surfaces of the plurality of components.

4. The package structure as claimed in claim 2 , wherein the plurality of components comprise a plurality of dies.

5. The package structure as claimed in claim 2 , wherein the plurality of components comprise a plurality of dies and a dam surrounding the plurality of dies, and the thermal conductive gel is disposed between the plurality of dies and between the plurality of dies and the dam.

6. The package structure as claimed in claim 2 , wherein the components comprise a first component and a second component, and a top surface of the second component is higher than a top surface of the first component.

7. The package structure as claimed in claim 6 , wherein the top surface of the second component is substantially flush with a top surface of the thermal conductive gel, and the top surface of the first component is covered by the thermal conductive gel.

8. The package structure as claimed in claim 2 , wherein the thermal conductive gel is in contact with sidewalls of the plurality of components.

9. The package structure as claimed in claim 1 , wherein the thermal conductive film is in contact with the uneven top surface of the semiconductor package.

10. The package structure as claimed in claim 1 , wherein the thermal conductive film comprises graphite, tin, silver, copper, indium, or a combination thereof.

11. The package structure as claimed in claim 1 , wherein the thermal conductivity of the thermal conductive film is 2 W/(m·K)˜100 W/(m·K), and the thermal conductivity of the thermal conductive gel is 2 W/(m·K)˜30 W/(m·K).

12. A manufacturing method of a package structure comprising:

providing a semiconductor package, wherein the semiconductor package comprises an integrated circuit and a plurality of dies on the integrated circuit, and a plurality of gaps are formed between the dies;

bonding the semiconductor package onto a substrate;

filling the plurality of gaps with a thermal conductive gel;

forming a thermal conductive film to cover the plurality of dies and the thermal conductive gel; and

disposing a heat spreader over the substrate to cover the semiconductor package, the thermal conductive gel and the thermal conductive film, wherein the thermal conductive film is surrounded by the heat spreader.

13. The manufacturing method as claimed in claim 12 , wherein a thermal conductivity of the thermal conductive film is higher than a thermal conductivity of the thermal conductive gel.

14. The manufacturing method as claimed in claim 12 , wherein a method of forming a thermal conductive film comprises:

placing the thermal conductive film over the plurality of dies and the thermal conductive gel; and

pressing the thermal conductive film onto the plurality of dies and the thermal conductive gel.

15. The manufacturing method as claimed in claim 12 , further comprising heating the thermal conductive gel after forming the thermal conductive film.

16. The manufacturing method as claimed in claim 12 , wherein a top surface of the thermal conductive gel is substantially coplanar with top surfaces of the plurality of dies after forming the thermal conductive film.

17. The manufacturing method as claimed in claim 12 , wherein the semiconductor package further comprises a dam surrounding the plurality of dies, and the thermal conductive gel is further formed between the dam and the plurality of dies.

18. A package structure comprising:

a substrate;

a semiconductor package bonded onto the substrate, wherein the semiconductor package has an uneven top surface;

a plurality of first thermal conductive films, disposed on the uneven top surface of the semiconductor package; and

a second thermal conductive film covering the uneven top surface of the semiconductor package and the plurality of first thermal conductive films, wherein a sidewall of the second thermal conductive film is substantially flush with a sidewall of the semiconductor package.

19. The package structure as claimed in claim 18 , wherein the semiconductor package comprises an integrated circuit and a plurality of dies on the integrated circuit, the plurality of first thermal conductive films is disposed between the plurality of dies, and top surfaces of the plurality of first thermal conductive films are substantially coplanar with top surfaces of the plurality of dies.

20. The package structure as claimed in claim 19 , wherein the plurality of first thermal conductive films are in contact with sidewalls of the plurality of dies, and the second thermal conductive film coves the plurality of dies.