Semiconductor device and method for manufacturing the same
An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.
1. A semiconductor device comprising:
a gate electrode layer;
a gate insulating layer over the gate electrode layer;
an oxide semiconductor layer over the gate insulating layer;
a first layer over the oxide semiconductor layer;
a second layer over the oxide semiconductor layer;
a source electrode layer electrically connected to the oxide semiconductor layer through the first layer; and
a drain electrode layer electrically connected to the oxide semiconductor layer through the second layer,
wherein each of the source electrode layer and the drain electrode layer includes a stacked structure of a first conductive layer and a second conductive layer,
wherein one of the first conductive layer and the second conductive layer includes copper,
wherein, in plan view:
the oxide semiconductor layer includes a first region projected beyond a periphery of the first layer,
the first layer includes a region projected beyond a periphery of the source electrode layer,
the oxide semiconductor layer includes a second region projected beyond a periphery of the second layer, and
the second layer includes a region projected beyond a periphery of the drain electrode layer, and
wherein, in the oxide semiconductor layer:
a thickness of the first region is smaller than a thickness of a region overlapping with the first layer, and
a thickness of the second region is smaller than a thickness of a region overlapping with the second layer.
2. The semiconductor device according to claim 1 , wherein the gate electrode layer comprises copper.
3. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer comprises indium, gallium, and zinc.
4. A semiconductor device comprising:
a gate electrode layer;
a gate insulating layer over the gate electrode layer;
an oxide semiconductor layer over the gate insulating layer;
a first layer over the oxide semiconductor layer;
a second layer over the oxide semiconductor layer;
a source electrode layer electrically connected to the oxide semiconductor layer through the first layer; and
a drain electrode layer electrically connected to the oxide semiconductor layer through the second layer,
wherein each of the source electrode layer and the drain electrode layer includes a stacked structure of a first conductive layer and a second conductive layer,
wherein one of the first conductive layer and the second conductive layer includes copper,
wherein the oxide semiconductor layer includes a channel formation region overlapping with the gate electrode layer,
wherein, in plan view:
the oxide semiconductor layer includes a first region projected beyond a periphery of the first layer,
the first layer includes a region projected beyond a periphery of the source electrode layer,
the oxide semiconductor layer includes a second region projected beyond a periphery of the second layer, and
the second layer includes a region projected beyond a periphery of the drain electrode layer, and
wherein the oxide semiconductor layer has a depression in the channel formation region.
5. The semiconductor device according to claim 4 , wherein the gate electrode layer comprises copper.
6. The semiconductor device according to claim 4 , wherein the oxide semiconductor layer comprises indium, gallium, and zinc.
7. A semiconductor device comprising:
a gate electrode layer;
a gate insulating layer over the gate electrode layer;
an oxide semiconductor layer over the gate insulating layer;
a first layer over the oxide semiconductor layer;
a second layer over the oxide semiconductor layer;
a source electrode layer electrically connected to the oxide semiconductor layer through the first layer; and
a drain electrode layer electrically connected to the oxide semiconductor layer through the second layer,
wherein each of the source electrode layer and the drain electrode layer includes a stacked structure of a first conductive layer and a second conductive layer,
wherein one of the first conductive layer and the second conductive layer includes copper,
wherein the oxide semiconductor layer includes a channel formation region overlapping with the gate electrode layer,
wherein, in plan view:
the oxide semiconductor layer includes a first region projected beyond a periphery of the first layer,
the first layer includes a region projected beyond a periphery of the source electrode layer,
the oxide semiconductor layer includes a second region projected beyond a periphery of the second layer, and
the second layer includes a region projected beyond a periphery of the drain electrode layer,
wherein the oxide semiconductor layer has a depression in the channel formation region, and
wherein, in the oxide semiconductor layer:
a thickness of the first region is smaller than a thickness of a region overlapping with the first layer, and
a thickness of the second region is smaller than a thickness of a region overlapping with the second layer.
8. The semiconductor device according to claim 7 , wherein the gate electrode layer comprises copper.
9. The semiconductor device according to claim 7 , wherein the oxide semiconductor layer comprises indium, gallium, and zinc.