Method for forming integrated semiconductor device with 2D material layer

1. A method of fabricating an integrated semiconductor device, the method comprising:

forming an inter-layer dielectric (ILD) layer over a semiconductor device that includes a first transistor structure;

etching a first via hole in the ILD layer to expose a gate of the first transistor structure and a second via hole in the ILD layer to expose a source/drain contact plug of the first transistor structure;

forming a first conductive plug in the first via hole and a second conductive plug in the second via hole;

forming a gate stack over and electrically connected to the first conductive plug;

forming a two-dimensional (2D) material layer having a first portion over the gate stack, a second portion over the ILD layer, and a third portion over and electrically connected to the second conductive plug; and

forming a third conductive plug over and electrically connected to the 2D material layer, wherein the second conductive plug and the third conductive plug are spaced apart in a lateral direction substantially parallel with a top surface of the ILD layer, and the gate stack is between, in the lateral direction, the second conductive plug and the third conductive plug.

2. The method of claim 1 , wherein the 2D material layer comprises graphene, bismuth, hexagonal form boron nitride (h-BN), molybdenum sulfide, molybdenum selenide, tungsten sulfide or tungsten selenide.

3. The method of claim 1 , wherein the 2D material layer comprises tin selenide, platinum sulfide, platinum selenide, cadmium sulfide, cadmium selenide, palladium selenide, rhenium sulfide, rhenium selenide, titanium selenide, molybdenum telluride, tungsten telluride, lead iodide, boron phosphide, gallium selenide or indium selenide.

4. The method of claim 1 , wherein the 2D material layer comprises a ternary 2D material, a hybridized 2D material, or combinations thereof.

5. The method of claim 4 , wherein the ternary 2D material comprises WSe 2(1-x) Te 2x , Ta 2 NiS 5 or ZnIn 2 S 4 , where x is in a range between 0 and 1.

6. The method of claim 4 , wherein the hybridized 2D material comprises a composition of boron nitride and graphene or a composition of molybdenum sulfide and rubrene.

7. The method of claim 1 , wherein forming the 2D material layer is performed such that a thickness of the 2D material layer in a range substantially from 10 angstroms to 50 angstroms.

8. A method comprising:

forming a first transistor over a substrate;

depositing an inter-layer dielectric (ILD) layer over the first transistor;

depositing a gate conductive layer over the ILD layer;

depositing a gate dielectric layer over the gate conductive layer;

etching the gate dielectric layer and the gate conductive layer to form a gate stack; and

depositing a 2D material layer that has a first portion extending along a top surface and sidewalls of the gate stack and a second portion extending along a top surface of the ILD layer.

9. The method of claim 8 , further comprising:

forming an inter-metal dielectric (IMD) layer over the 2D material layer; and

forming conductive vias extending through the IMD layer to the 2D material layer.

10. The method of claim 9 , wherein the conductive vias non-overlap the gate stack.

11. The method of claim 8 , further comprising:

prior to forming the gate conductive layer, forming a first conductive plug and a second conductive plug extending through the ILD layer,

wherein etching the gate dielectric layer and the gate conductive layer is performed such that the gate stack overlaps the first conductive plug.

12. The method of claim 11 , wherein depositing the 2D material layer is performed such that the 2D material layer is in contact with the second conductive plug.

13. The method of claim 11 , further comprising:

forming an inter-metal dielectric (IMD) layer over the 2D material layer; and

forming a conductive via extending through the IMD layer to the 2D material layer, the conductive via overlapping the second conductive plug.

14. A method comprising:

forming a first inter-layer dielectric (ILD) layer over a semiconductor device that includes a first transistor structure;

forming a conductive plug in the first ILD layer and electrically connected to the first transistor structure;

forming a gate structure over the first ILD layer after forming the conductive plug;

depositing a two-dimensional (2D) material layer over the gate structure and the conductive plug; and

forming a conductive via over the 2D material layer.

15. The method of claim 14 , wherein the gate structure is formed directly on the conductive plug and a gate of the first transistor structure.

16. The method of claim 14 , wherein a bottom surface of the conductive via is lower than a top surface of the gate structure.

17. The method of claim 14 , wherein a portion of the 2D material layer is directly between the conductive via and the conductive plug.

18. The method of claim 14 , wherein the 2D material layer comprises WSe 2(1-x) Te 2x , Ta 2 NiS 5 or ZnIn 2 S 4 , where x is in a range between 0 and 1.

19. The method of claim 14 , wherein forming the gate structure over the first ILD layer comprises:

depositing a metal layer over the first ILD layer such that the metal layer is in contact with the conductive plug;

depositing a dielectric layer over the metal layer; and

patterning the dielectric layer and the metal layer to form the gate structure.

20. The method of claim 14 , wherein depositing the 2D material layer is such that the 2D material layer is in contact with a sidewall of the gate structure.