Method of manufacturing nitride semiconductor light emitting element

1. A method of manufacturing a nitride semiconductor light-emitting element configured to emit deep ultraviolet light, the method comprising:

providing a semiconductor structure comprising:

an n-side semiconductor layer comprising an n-side contact layer comprising aluminum, gallium, and nitrogen,

a p-side semiconductor layer, and

an active layer between the n-side semiconductor layer and the p-side semiconductor layer;

forming an n-side electrode, which comprises forming, successively from an n-side contact layer side:

a first layer located above the n-side contact layer and comprising a titanium layer,

a second layer located above the first layer and comprising a silicon-containing aluminum alloy layer, and

a third layer located above the second layer and comprising a tantalum layer and/or a tungsten layer; and

heating the n-side electrode.

2. The method according to claim 1 , wherein the step of heating the n-side electrode causes alloying between the first layer and the second layer.

3. The method according to claim 1 , wherein the n-side contact layer consists essentially of Al x Ga 1-x N (0.5≤x≤1).

4. The method according to claim 1 , wherein a thickness of the titanium layer is at least 20 nm, and at most 30 nm.

5. The method according to claim 1 , wherein the silicon-containing aluminum alloy layer contains 10 percent by mass to 25 percent by mass of silicon relative to a sum of aluminum and silicon.

6. The method according to claim 1 , wherein a thickness of the tantalum layer or tungsten layer is at least 300 nm, and at most 500 nm.

7. The method according to claim 1 , wherein the step of forming the n-side electrode further comprises forming a fourth layer located above the third layer and comprising a titanium layer and/or a ruthenium layer.