Apparatus for wafer processing
An apparatus for wafer processing includes a wafer pedestal configured to support a wafer, a radiation source configured to provide an electromagnetic radiation to the wafer, and a transparent window disposed between the wafer pedestal and the radiation source. The transparent window has a first zone having a first rough surface, and an Ra value of the first rough surface is between approximately 0.5 μm and approximately 100 μm. The apparatus for wafer processing further includes a primary reflector disposed in the radiation source, and a secondary reflector disposed between the transparent window and the radiation source. The rough surface can be provided over the transparent window, the primary reflector, and/or the secondary reflector.
1. An apparatus for wafer processing comprising:
A wafer pedestal configured to support a wafer;
a UV radiation source configured to provide an electromagnetic radiation to the wafer; and
a transparent window disposed between the wafer pedestal and the UV radiation source,
wherein the transparent window has a first zone having a first rough surface, and a second zone encircling the first zone, an arithmetical mean roughness (Ra) value of the first rough surface is between approximately 0.5 micrometer and approximately 100 um, wherein the first zone faces the UV radiation source, and a reflectivity in the second zone is greater than a reflectivity in the first zone, and wherein a reflectivity in the first zone is less than approximately 0.1%, and the reflectivity in the second zone is approximately 3%.
2. The apparatus of claim 1 , wherein a diameter of the first zone is less than a diameter of the transparent window.
3. The apparatus of claim 1 , wherein the second zone has a second rough surface, and an Ra value of the second rough surface is less than the Ra value of the first rough surface.
4. The apparatus of claim 1 , wherein the first zone has a circular shape and is defined in a center region of the transparent window, and the second zone is arranged concentric to the first zone.
5. The apparatus of claim 1 , further comprising:
a primary reflector disposed in the UV radiation source; and
a secondary reflector disposed between the transparent window and the UV radiation source.
6. An apparatus for wafer processing comprising:
a wafer pedestal configured to support a wafer;
a UV radiation source configured to provide an electromagnetic radiation to the wafer; and
a transparent window disposed between the wafer pedestal and the UV radiation source, wherein the transparent window has a first surface facing the radiation source and a second surface facing the wafer pedestal,
wherein the first surface of the transparent window has a first zone and a second zone, an Ra value of the first zone of the first surface is greater than an Ra value of the second zone of the first surface and a reflectivity in the second zone is greater than a reflectivity in the first zone, and wherein a reflectivity in the first zone is less than approximately 0.1%, and the reflectivity in the second zone is approximately 3%.
7. The apparatus of claim 6 , wherein the Ra value of the first zone of the first surface is between approximately 0.5 micrometer and approximately 100 μm, and the Ra value of the second zone of the first surface is less than 0.5 μm.
8. The apparatus of claim 6 , wherein a diameter of the first zone of the first surface is less than a diameter of the transparent window.
9. The apparatus of claim 6 , wherein the first zone of the first surface has a circular shape and is defined in a center region of the transparent window, and the second zone of the first surface is arranged concentric to and encircles the first zone of the first surface.
10. The apparatus of claim 6 , wherein the second surface of the transparent window has a third zone and a fourth zone, and an Ra value of the third zone of the second surface is greater than an Ra value of the fourth zone of the second surface.
11. The apparatus of claim 10 , wherein the Ra value of the third zone of the second surface is between approximately 0.5 micrometer and approximately 100 μm, and the Ra value of the fourth zone of the second surface is less than 0.5 μm.
12. The apparatus of claim 10 , wherein a diameter of the third zone of the second surface is less than a diameter of the transparent window.
13. The apparatus of claim 10 , wherein the third zone of the second surface has a circular shape and is defined in a center region of the transparent window, and the fourth zone of the second surface is arranged concentric to and encircles the third zone of the second surface.
14. The apparatus of claim 10 , wherein the first zone of the first surface substantially overlaps the third zone of the second surface.
15. An apparatus for wafer processing comprising:
a wafer pedestal configured to support a wafer;
a UV radiation source configured to provide an electromagnetic radiation to the wafer; and
a transparent window disposed between the wafer pedestal and the UV radiation source,
wherein the transparent window has a surface facing the radiation source, the surface has a first zone, a second zone and a third zone, the first zone is defined in a center region of the transparent window, the third zone is concentric to and encircles the first zone, the second zone is between the first zone and the third zone, an Ra value of the second zone is less than an Ra value of the first zone, and an Ra value of the third zone is less than an Ra value of the second zone, and a reflectivity in the second zone is greater than a reflectivity in the first zone, and wherein a reflectivity in the first zone is less than approximately 0.1%, and the reflectivity in the second zone is approximately 3%.
16. The apparatus of claim 15 , wherein a diameter of the first zone is less than a diameter of the transparent window.
17. The apparatus of claim 15 , further comprising:
a primary reflector disposed in the UV radiation source; and
a secondary reflector disposed between the transparent window and the UV radiation source.