Semiconductor structures including stacked depleted and high resistivity regions
Structures including electrical isolation and methods associated with forming such structures. A semiconductor layer has a top surface, a polycrystalline region, and a single-crystal region between the polycrystalline region and the top surface. An isolation band is located beneath the single-crystal region. The isolation band contains a first concentration of an n-type dopant and a second concentration of a p-type dopant, and a net difference between the first concentration and the second concentration is within a range of about five percent to about fifteen percent.
1. A structure comprising:
a semiconductor substrate including a top surface, a first region and a second region each comprised of a single-crystal semiconductor material, and a third region comprised of a polycrystalline semiconductor material, the first region positioned between the top surface and the third region, the second region positioned relative to the top surface below the third region, and the third region separating the first region from the second region;
a first isolation band in the second region of the semiconductor substrate and below the third region of the semiconductor substrate, the first isolation band comprising a first concentration of a dopant in the second region of the semiconductor substrate; and
a plurality of shallow trench isolation regions arranged to surround an active region portion of the first region,
wherein the third region of the semiconductor substrate is arranged between the active region portion and the first isolation band.
2. The structure of claim 1 wherein the first isolation band extends fully beneath an entirety of the active region portion, and the third region of the semiconductor substrate extends fully beneath an entirety of the active region portion.
3. The structure of claim 1 wherein the first isolation band extends beneath the trench isolation regions, and the third region of the semiconductor substrate extends beneath the trench isolation regions.
4. The structure of claim 1 further comprising:
a field-effect transistor including a first source/drain region in the active region portion and a second source/drain region in the active region portion.
5. The structure of claim 4 wherein the active region portion includes a well doped with a p-type dopant, and the dopant of the first isolation band is an n-type dopant.
6. The structure of claim 4 wherein the active region portion includes a well doped with an n-type dopant, and the dopant of the first isolation band is a p-type dopant.
7. The structure of claim 1 further comprising:
a second isolation band region between the active region portion and the third region of the semiconductor substrate, the second isolation band comprising a second concentration of the dopant in the first region of the semiconductor substrate.
8. The structure of claim 7 wherein the third region of the semiconductor substrate is positioned between the first isolation band and the second isolation band.
9. The structure of claim 7 wherein the first concentration of the dopant and the second concentration of the dopant are less than or equal to 10 16 cm −3 .
10. The structure of claim 1 wherein the first isolation band contains a concentration of the dopant that is less than or equal to 10 16 cm −3 .
11. The structure of claim 1 wherein the polycrystalline semiconductor material of the third region of the semiconductor substrate comprises noble gas atoms.
12. The structure of claim 11 wherein the noble gas atoms are argon atoms.
13. A structure comprising:
a semiconductor substrate including a top surface, a first region and a second region each comprised of a single-crystal semiconductor material, and a third region comprised of a polycrystalline semiconductor material, the first region positioned between the top surface and the third region, the second region positioned relative to the top surface below the third region, and the third region separating the first region from the second region;
an isolation band in the first region of the semiconductor substrate and above the third region of the semiconductor substrate, the isolation band comprising a first concentration of a dopant in the first region of the semiconductor substrate; and
a plurality of shallow trench isolation regions arranged to surround an active region portion of the first region,
wherein the isolation band is arranged between the active region portion and the third region of the semiconductor substrate.
14. The structure of claim 13 wherein the isolation band extends fully beneath an entirety of the active region portion, and the third region of the semiconductor substrate extends fully beneath an entirety of the active region portion.
15. The structure of claim 13 wherein the isolation band extends beneath the trench isolation regions, and the third region of the semiconductor substrate extends beneath the trench isolation regions.
16. The structure of claim 13 further comprising:
a field-effect transistor including a first source/drain region in the active region portion and a second source/drain region in the active region portion.
17. The structure of claim 13 wherein the isolation band contains a concentration of the dopant that is less than or equal to 10 16 cm −3 .
18. The structure of claim 13 wherein the polycrystalline semiconductor material of the third region of the semiconductor substrate comprises noble gas atoms.
19. The structure of claim 18 wherein the noble gas atoms are argon atoms.