Semiconductor device
Provided is a semiconductor device having excellent heat radiation performance and electromagnetic wave suppression effect. A semiconductor device 1 comprises: a semiconductor element 30 formed on a substrate 50 ; a conductive shield can 20 having an opening hole 21 ; a conductive cooling member 40 located above the conductive shield can 20 ; a heat conductive sheet 10 formed between the semiconductor element 30 and the conductive cooling member 40 at least through the opening hole 21 ; and a conductive member 11 electrically connecting the conductive shield can 20 and the conductive cooling member 40.
1. A semiconductor device comprising:
a semiconductor element formed on a substrate;
a conductive shield can connected to a ground and having an opening hole;
a conductive cooling member located above the conductive shield can;
a heat conductive sheet formed between the semiconductor element and the conductive cooling member at least through the opening hole of the conductive shield can; and
a conductive member formed between an upper surface of the conductive shield can and a lower surface of the conductive cooling member, and electrically connecting the conductive shield can and the conductive cooling member wherein
a spacing between parts of the conductive member facing each other with the heat conductive sheet therebetween is less than or equal to 1/10 of a wavelength at a maximum frequency of the semiconductor element.
2. The semiconductor device according to claim 1 , wherein the conductive member is connected to the conductive shield can and the conductive cooling member, to form an electrically closed region.
3. The semiconductor device according to claim 1 , wherein a resistance value of the conductive member is 2Ω or less.
4. The semiconductor device according to claim 1 , wherein the conductive member has tackiness or adhesiveness at a surface thereof.
5. The semiconductor device according to claim 1 , wherein the conductive member contains a cured resin.
6. The semiconductor device according to claim 1 , wherein the conductive member contains a conductive filler.
7. The semiconductor device according to claim 1 , wherein the heat conductive sheet contains carbon fibers.