Semiconductor device package and method of manufacturing the same
A semiconductor device package includes a substrate, a first semiconductor die, a conductive via, a first contact pad and a second contact pad. The substrate includes a first surface, and a second surface opposite to the first surface, the substrate defines a cavity through the substrate. The first semiconductor die is disposed in the cavity, wherein the first semiconductor die includes an active surface adjacent to the first surface, and an inactive surface. The conductive via penetrates through the substrate. The first contact pad is exposed from the active surface of the first semiconductor die and adjacent to the first surface of the substrate. The second contact pad is disposed on the first surface of the substrate, wherein the second contact pad is connected to a first end of the conductive via.
1. A semiconductor device package, comprising:
a substrate including a first surface, the substrate defining a cavity through the substrate;
a first semiconductor die disposed in the cavity, wherein the first semiconductor die includes an active surface at a same side of the first surface;
a conductive via through the substrate;
a first contact pad exposed from the active surface and protruded from a horizontal level of the first surface of the substrate;
a second contact pad disposed on a first end of the conductive via and protruded from the first surface;
a first via disposed on the first contact pad;
a second via disposed on the second contact pad;
an encapsulation layer encapsulating the first contact pad and the second contact pad;
a third contact pad disposed on a second end of the conductive via opposite to the first end, and protruded from a second surface of the substrate opposite to the first surface; and
a second semiconductor die disposed in the cavity and stacked on the first semiconductor die, wherein the second semiconductor die includes an active surface at a same side of the second surface of the substrate.
2. The semiconductor device package of claim 1 , further comprising a first redistribution layer (RDL) disposed on the first surface of the substrate and electrically connected to the first contact pad through the first via and the second contact pad through the second via.
3. The semiconductor device package of claim 1 , wherein the encapsulation layer further encapsulates an interface between the first contact pad and the first via.
4. The semiconductor device package of claim 1 , further comprising a fourth contact pad exposed from the active surface of the second semiconductor die and protruded from a horizontal level of the second surface of the substrate, and a fourth via is disposed on the fourth contact pad.
5. The semiconductor device package of claim 4 , further comprising a second RDL disposed on the second surface of the substrate, and electrically connected to the fourth contact pad through the fourth via, wherein a solder ball is electrically connected to the fourth contact pad through the second RDL.
6. The semiconductor device package of claim 1 , wherein the first contact pad and the second contact pad are substantially leveled.
7. The semiconductor device package of claim 1 , wherein the encapsulation layer further encapsulates the active surface of the first semiconductor die and the active surface of the second semiconductor die.
8. The semiconductor device package of claim 1 , wherein the active surface of the second semiconductor die and a second surface of the substrate opposite to the first surface are substantially leveled.
9. The semiconductor device package of claim 1 , wherein the first via comprises a first end and a second end, wherein the first end is closer to the first surface than the second end, and wherein a width of the first end is smaller than a width of the second end.
10. The semiconductor device package of claim 1 , wherein the encapsulation layer further encapsulates an interface between the second via and the second contact pad.
11. The semiconductor device package of claim 1 , further comprising a third via disposed on the third contact pad.
12. The semiconductor device package of claim 11 , further comprising a second RDL disposed on the second surface of the substrate, and electrically connected to the third contact pad through the third via.