Solid-state imaging device and electronic apparatus
The present disclosure relates to a solid-state imaging device and an electronic apparatus which allow reduction of optical crosstalk. In an example of FIG. 5 B, a charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. In an example of FIG. 5 C, a charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a half (one side) of a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. The present disclosure can be applied to a CMOS solid-state imaging device used for an imaging apparatus such as a camera, for example.
1. A light detecting device, comprising:
a pixel array that includes a pixel unit; and
a plurality of vertical signal lines that includes a signal line coupled to the pixel unit of the pixel array, wherein the pixel unit includes:
a first photoelectric conversion region;
a second photoelectric conversion region, wherein a light receiving surface of the first photoelectric conversion region is larger than a light receiving surface of the second photoelectric conversion region;
a first transfer transistor coupled to the first photoelectric conversion region;
a floating diffusion region configured to store charge transferred via the first transfer transistor;
a second transfer transistor coupled to the floating diffusion region;
a charge storing region that includes a metal electrode and an insulating film, wherein the charge storing region is configured to surround a plurality of sides of the second photoelectric conversion region;
a third transfer transistor coupled to the charge storing region;
a selection transistor; and
an amplification transistor configured to output a pixel signal to the signal line via the selection transistor, wherein
the pixel signal is outputted based on the stored charge, and
a shape of the insulating film is a concave shape in a cross-sectional view of the pixel unit.
2. The light detecting device according to claim 1 , wherein the metal electrode includes one of Ti, TiN, or W.
3. The light detecting device according to claim 1 , wherein the insulating film covers a bottom of the metal electrode and a part of a plurality of sides of the metal electrode.
4. The light detecting device according to claim 1 , further comprising a reset transistor coupled to the second transfer transistor.
5. The light detecting device according to claim 1 , further comprising a wiring layer that includes the charge storing region.
6. The light detecting device according to claim 1 , wherein the selection transistor is between a source electrode of the amplification transistor and the signal line.
7. The light detecting device according to claim 1 , further comprising
a fourth transfer transistor between the second photoelectric conversion region and the charge storing region.
8. The light detecting device according to claim 7 , wherein the charge storing region includes a capacitor that is between the third transfer transistor and the fourth transfer transistor.
9. The light detecting device according to claim 1 , wherein the second transfer transistor is between the charge storing region and the floating diffusion region.