Quantum dot devices
Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines; and an array of regularly spaced magnet lines.
1. A quantum dot device, comprising:
a quantum well stack;
a plurality of first gate lines above the quantum well stack; and
a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines;
wherein the first gate lines or the second gate lines include a magnetic material.
2. The quantum dot device of claim 1 , wherein the magnetic material includes cobalt or nickel.
3. The quantum dot device of claim 1 , wherein the first gate lines are at least partially between the second gate lines and the quantum well stack.
4. The quantum dot device of claim 1 , wherein the first gate lines have a pitch between 5 nanometers and 200 nanometers.
5. The quantum dot device of claim 4 , wherein the second gate lines have a pitch between 5 nanometers and 200 nanometers.
6. The quantum dot device of claim 1 , wherein the second gate lines include quantum dot gates extending toward the quantum well stack between one or more adjacent pairs of first gate lines.
7. The quantum dot device of claim 6 , wherein an interior quantum dot gate has at least 8 nearest neighbor quantum dot gates.
8. The quantum dot device of claim 6 , wherein an interior quantum dot gate has fewer than 8 nearest neighbor quantum dot gates.
9. A quantum dot device, comprising:
a quantum well stack;
a plurality of first gate lines above the quantum well stack; and
a plurality of second gate lines above the quantum well stack;
wherein the second gate lines are perpendicular to the first gate lines, the second gate lines include quantum dot gates extending toward the quantum well stack between one or more adjacent pairs of first gate lines, and an interior quantum dot gate has fewer than 8 nearest neighbor quantum dot gates.
10. The quantum dot device of claim 9 , wherein the interior quantum dot gate has 4 nearest neighbor quantum dot gates.
11. The quantum dot device of claim 9 , wherein the interior quantum dot gate has 2 nearest neighbor quantum dot gates.
12. The quantum dot device of claim 9 , wherein the first gate lines or the second gate lines include a magnetic material or a superconducting material.
13. A quantum computing device, comprising:
a quantum processing device, wherein the quantum processing device includes a quantum well stack, a plurality of first gate lines above the quantum well stack, a plurality of second gate lines above the quantum well stack, wherein the second gate lines are perpendicular to the first gate lines;
a non-quantum processing device, coupled to the quantum processing device, to control electrical signals applied to the first and second gate lines; and
a memory device to store data generated during operation of the quantum processing device;
wherein the first gate lines include a magnetic material, or the first gate lines include a superconducting material and the non-quantum processing device is to control current applied to the first gate lines to cause the first gate lines to generate a magnetic field gradient.
14. The quantum computing device of claim 13 , further comprising:
a cooling apparatus to maintain a temperature of the quantum processing device below 10 Kelvin.
15. The quantum computing device of claim 13 , wherein the memory device is to store instructions for a quantum computing algorithm to be executed by the quantum processing device.
16. The quantum computing device of claim 13 , wherein the second gate lines include quantum dot gates extending toward the quantum well stack between one or more adjacent pairs of first gate lines, and an interior quantum dot gate has fewer than 8 nearest neighbor quantum dot gates.
17. The quantum computing device of claim 13 , wherein the quantum well stack includes a layer of silicon and a layer of silicon oxide between the layer of silicon and the first gate lines.
18. The quantum computing device of claim 13 , wherein electron-based or hole-based quantum dots are formed in the quantum well stack during operation of the quantum processing device.