Chip-stacked semiconductor package and method of manufacturing same
A chip-stacked semiconductor package includes a first chip including a first detection pad and a second detection pad; a second chip provided on the first chip, the second chip including a third detection pad facing the first detection pad and a fourth detection pad facing the second detection pad; and a first medium provided between the first detection pad and the third detection pad to connect the first detection pad to the third detection pad through the first medium, and a second medium, different from the first medium, provided between the second detection pad and the fourth detection pad to connect the second detection pad to the fourth detection pad through the second medium.
1. A chip-stacked semiconductor package comprising:
a first chip comprising a first detection pad and a second detection pad;
a second chip provided on the first chip, the second chip comprising a third detection pad facing the first detection pad and a fourth detection pad facing the second detection pad; and
a first medium provided between the first detection pad and the third detection pad to connect the first detection pad to the third detection pad through the first medium, and a second medium, different from the first medium, provided between the second detection pad and the fourth detection pad to connect the second detection pad to the fourth detection pad through the second medium.
2. The chip-stacked semiconductor package of claim 1 , wherein the second detection pad is located adjacent to the first detection pad and the fourth detection pad is located adjacent to the third detection pad.
3. The chip-stacked semiconductor package of claim 1 , wherein the first medium is a solder bump, and the second medium is an underfill or a sealant.
4. The chip-stacked semiconductor package of claim 1 , wherein the third detection pad and the fourth detection pad are connected to each other via a conductive line in the second chip.
5. The chip-stacked semiconductor package of claim 1 , wherein the first chip comprises:
a chip region on which the first detection pad and the second detection pad are provided,
a scribe lane region adjacent to the chip region, and
a plurality of conductive lines formed on the scribe lane region configured to electrically connect the first detection pad and the second detection pad.
6. The chip-stacked semiconductor package of claim 1 , wherein the first chip comprises:
a chip region on which the first detection pad and the second detection pad are provided formed,
a scribe lane region adjacent to the chip region,
a first test terminal electrically connected to the first detection pad via a first conductive line formed on the scribe lane region, and
a second test terminal electrically connected to the second detection pad via a second conductive line formed on the scribe lane region.
7. The chip-stacked semiconductor package of claim 1 , wherein the first chip comprises:
a plurality of first chip pads provided on an edge portion of the first chip, wherein a first one of the plurality of first chip pads is the first detection pad and a second one of the plurality of first chip pads is the second detection pad, and
wherein the second chip comprises:
a plurality of second chip pads provided on an edge portion of the second chip, wherein a first one of the plurality of second chip pads is the third detection pad and a second one of the plurality of second chip pads is the fourth detection pad.
8. The chip-stacked semiconductor package of claim 1 , wherein the first chip comprises:
a plurality of first chip pads provided on a center portion of the first chip, wherein a first one of the plurality of first chip pads is the first detection pad and a second one of the plurality of first chip pads is the second detection pad, and
wherein the second chip comprises:
a plurality of second chip pads provided on a center portion of the second chip, wherein a first one of the plurality of second chip pads is the third detection pad and a second one of the plurality of second chip pads is the fourth detection pad.
9. The chip-stacked semiconductor package of claim 1 , wherein the first chip further comprises: a plurality of first chip pads, wherein respective planar sizes of the first detection pad and the second detection pad are greater than a planar size of each of the plurality of first chip pads, and
wherein the second chip further comprises: a plurality of second chip pads, wherein respective planar sizes of the third detection pad and the fourth detection pad are greater than a planar size of each of the plurality of second chip pads.
10. The chip-stacked semiconductor package of claim 1 , wherein a horizontally overlapping area between the second detection pad and the fourth detection pad indicates a stacking accuracy, and wherein the horizontally overlapping area between the second detection pad and the fourth detection pad is 39% to 100% of an area of the second detection pad or the fourth detection pad.
11. The chip-stacked semiconductor package of claim 1 , wherein a joint gap between the first chip and the second chip is 1/2 to 3/2 of a reference joint gap between the second detection pad and the fourth detection pad.
12. A chip-stacked semiconductor package comprising:
a first chip comprising a first detection pad, a second detection pad, a first test terminal and a second test terminal, the first test terminal electrically connected to the first detection pad and the second test terminal electrically connected to the second detection pad; and
a second chip provided on the first chip with a gap therebetween and comprising a third detection pad facing the first detection pad and a fourth detection pad facing the second detection pad,
wherein the third detection pad overlaps the first detection pad and is connected to the first detection pad through a medium,
wherein the fourth detection pad is not connected to the second detection pad through the medium,
wherein the fourth detection pad is electrically connected to the third detection pad via a conductive line, and
wherein the first test terminal and the second test terminal are configured to measure a capacitance between the second detection pad and the fourth detection pad.
13. The chip-stacked semiconductor package of claim 12 , wherein a planar shape of each of the first through fourth detection pads is a circle or a polygon.
14. The chip-stacked semiconductor package of claim 12 , wherein the first detection pad and the second detection pad constitute a first detection pad group, and the first detection pad group comprises a first sub detection pad group and a second sub detection pad group separated from each other, and
the third detection pad and the fourth detection pad constitute a second detection pad group, and the second detection pad group comprises a third sub detection pad group and a fourth sub detection pad group separated from each other.
15. The chip-stacked semiconductor package of claim 12 , wherein the first chip comprises: a chip region on which the first detection pad and the second detection pad are provided,
a scribe lane region adjacent to the chip region, and
a plurality of conductive lines formed on the scribe lane region configured to electrically connect the first detection pad and the second detection pad.
16. The chip-stacked semiconductor package of claim 12 , wherein a capacitance between the second detection pad and the fourth detection pad indicates a stacking accuracy based on a horizontally overlapping area between the second detection pad and the fourth detection pad, and the capacitance corresponding to the stacking accuracy is 39% to 100% of a reference capacitance.
17. The chip-stacked semiconductor package of claim 12 , wherein a capacitance between the second detection pad and the fourth detection pad indicates a joint gap between the first chip and the second chip, and the capacitance corresponding to the joint gap is 67% to 200% of a reference capacitance.
18. A chip-stacked semiconductor package comprising:
a first chip comprising first connecting members respectively provided on one surface of each of through silicon vias and electrically connected to the through silicon vias, and first chip pads respectively on another surface of each of the through silicon vias and electrically connected to the through silicon vias;
a second chip on the first chip and comprising second connecting members electrically connected to the first chip pads, wherein the second connecting members comprise bumps and second chip pads; and
a sealant configured to seal spaces between the second connecting members and the first chip pads between the first chip and the second chip,
wherein a first one of the first chip pads forms a first detection pad and a second one of the first chip pads forms a second detection pad,
wherein a first one of the second chip pads forms a third detection pad connected to the first detection pad, and a second one of the second chip pads forms a fourth detection pad,
wherein the fourth detection pad is not connected to the second detection pad, and
wherein the fourth detection pad is electrically connected to the third detection pad via a conductive line.
19. The chip-stacked semiconductor package of claim 18 , wherein a bump is provided between the first detection pad and the third detection pad to electrically connect the first detection pad to the third detection pad via the bump, and wherein the sealant is provided between the fourth detection pad and the second detection pad.
20. The chip-stacked semiconductor package of claim 18 , wherein the first connecting members are formed of test terminals electrically connected to the first detection pad and the second detection pad, and wherein the first connecting members are configured to measure a capacitance between the second detection pad and the fourth detection pad.