IP Library Granted Patent US 11,329,015
Granted Patent B2
US 11,329,015 · App. 16/789,236 · Granted May 10, 2022

Semiconductor device package and method of manufacturing the same

Inventor: Meng-Wei Hsieh (Kaohsiung, TW)
Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
H01L23/66H01L21/486H01L23/49827H01L2223/6677H01Q1/2283
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Quick Facts
Patent No.
US 11,329,015
App. No.
16/789,236
Granted
May 10, 2022
Kind
B2
Abstract

A semiconductor device package includes an emitting device and a first building-up circuit. The emitting device defines a cavity in the emitting device. The first building-up circuit is disposed on the emitting device.

Claims (37)

1. A semiconductor device package, comprising:

an emitting device defining a cavity in the emitting device, the emitting device comprising:

a first emitting layer;

a support element disposed on the first emitting layer; and

a second emitting layer disposed on the support element; and

a first building-up circuit disposed on the emitting device,

wherein a width of the emitting device is less than a width of the first building-up circuit.

2. The semiconductor device package of claim 1 , wherein a lateral surface of the emitting device is recessed from a lateral surface of the first building-up circuit.

3. The semiconductor device package of claim 1 , wherein a lateral surface of the emitting device is substantially coplanar with a lateral surface of the first building-up circuit.

4. The semiconductor device package of claim 1 , further comprising a first package body covering a lateral surface of the emitting device and exposing surface of the emitting device adjacent to the lateral surface of the emitting device.

5. The semiconductor device package of claim 1 , wherein

the first emitting layer including a first emitting pattern;

the second emitting layer including a dielectric layer, a via penetrating the dielectric layer and a second emitting pattern connected to the via; and

the second emitting pattern faces the first emitting pattern and substantially aligned with the first emitting pattern.

6. The semiconductor device package of claim 5 , further comprising a first package body covering a lateral surface of the support element, a lateral surface of the first emitting layer and a lateral surface of the second emitting layer.

7. The semiconductor device package of claim 6 , wherein the first package body and the dielectric layer of the second emitting layer include the same material.

8. The semiconductor device package of claim 5 , wherein the support element directly contacts the dielectric layer of the second emitting layer.

9. The semiconductor device package of claim 1 , wherein the support element fully surrounds the cavity.

10. The semiconductor device package of claim 1 , further comprising:

a first set of conductive pillars disposed on the first building-up circuit; and

a second package body disposed on the first building-up circuit and covering the first set of conductive pillars.

11. The semiconductor device package of claim 10 , further comprising:

a third building-up circuit disposed on the second package body;

a second set of conductive pillars disposed on the third building-up circuit; and

a third package body disposed on the third building-up circuit and covering the second set of conductive pillars.

12. The semiconductor device package of claim 11 , further comprising an electronic component disposed on the third building-up circuit and covered by the third package body, the electronic component having an active surface facing the third building-up circuit and electrically connected to the third building-up circuit.

13. A semiconductor device package, comprising:

an antenna device defining a cavity in the antenna device, the antenna device comprising:

a first emitting layer;

a support element disposed on the first emitting layer; and

a second emitting layer disposed on the support element; and

an encapsulant covering a lateral surface of the antenna device and exposing a surface of the antenna device adjacent to the lateral surface of the antenna device.

14. The semiconductor device package of claim 13 , wherein

the first emitting layer including a first emitting pattern;

the second emitting layer including a dielectric layer, a via penetrating the dielectric layer and a second emitting pattern connected to the via; and

the second emitting pattern faces the first emitting pattern and substantially aligned with the first emitting pattern.

15. The semiconductor device package of claim 13 , wherein the support element fully surrounds the cavity.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 14, 2020
From: HSIEH, MENG-WEI
To: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
Reel/Frame 052656/0634 →
Continuity (1)
Related Publication 20210249367A1 · Aug 12, 2021