Wafer level image sensor package

1. An image sensor package, comprising:

a package substrate;

an image sensor chip arranged over the package substrate and comprising a device layer having a pixel sensing array disposed therein, a color filter array disposed over a topmost surface of the device layer, and a micro lens array disposed over the color filter array;

a protection layer overlying the micro lens array and having a planar top surface and a bottom surface lining and directly contacting structures under the protection layer;

an on-wafer lens having a convex top surface and arranged above the micro lens array and under the protection layer; and

an on-wafer shield structure of single material spaced around a periphery of the image sensor chip and having a sidewall directly contacting sidewalls of the protection layer and the device layer;

wherein the on-wafer lens has a sidewall that directly contacts the sidewall of the on-wafer shield structure.

2. The image sensor package according to claim 1 , wherein the planar top surface of the protection layer is aligned with a top surface of the on-wafer shield structure.

3. The image sensor package according to claim 1 , further comprising:

an on-wafer filtering coating arranged above the image sensor chip and under the on-wafer lens;

wherein the on-wafer filtering coating is configured to filter infrared light.

4. The image sensor package according to claim 3 , wherein the on-wafer filtering coating has a sidewall that directly contacts the sidewall of the on-wafer shield structure.

5. The image sensor package according to claim 1 , wherein the protection layer directly contacts the micro lens array.

6. The image sensor package according to claim 1 , further comprising:

a flatness layer arranged between the color filter array and the micro lens array,

wherein the flatness layer has a sidewall directly contacting the sidewall of the on-wafer shield structure.

7. The image sensor package according to claim 1 , wherein the on-wafer shield structure comprises an upper portion and a lower portion, wherein the upper portion is wider than or equal to the lower portion.

8. The image sensor package according to claim 7 , wherein the lower portion directly contacts sidewalls of the package substrate, a metallization stack between the package substrate and the device layer, and the device layer.

9. The image sensor package according to claim 7 , wherein the upper portion sits on and has a bottom surface directly contacting a top surface of a flatness layer arranged between the color filter array and the micro lens array.

10. An image sensor package, comprising:

a first substrate;

a metallization stack disposed over the first substrate;

a device layer disposed over the metallization stack and having a pixel sensing array disposed therein;

a color filter array disposed over the pixel sensing array;

a micro lens array disposed over the color filter array;

a protection layer overlying the micro lens array;

an on-wafer lens having a convex top surface and an on-wafer filtering coating configured to filter infrared light, the on-wafer lens and the on-wafer filtering coating arranged between the micro lens array and the protection layer; and

a seamless on-wafer shield structure spaced around a periphery of the image sensor package and comprising a lower portion surrounding and directly contacting sidewalls of the first substrate and an upper portion wider than the lower portion and directly contacting sidewalls of the protection layer;

wherein the on-wafer filtering coating has a sidewall that directly contacts a sidewall of the seamless on-wafer shield structure.

11. The image sensor package according to claim 10 , wherein the protection layer has a top surface aligned with a top surface of the seamless on-wafer shield structure.

12. The image sensor package according to claim 10 , wherein a bottom surface of the on-wafer filtering coating, the on-wafer lens, or the protection layer is aligned with a bottom surface of the seamless on-wafer shield structure.

13. The image sensor package according to claim 10 , wherein the upper portion of the seamless on-wafer shield structure is wider than the lower portion.

14. An image sensor, comprising:

a first substrate having a pixel sensing array disposed on a front side;

a color filter array disposed over the pixel sensing array;

a micro lens array disposed over the color filter array;

an on-wafer filtering coating arranged directly contacting the micro lens array;

an on-wafer lens having a convex top surface and arranged directly contacting the on-wafer filtering coating;

a module lens disposed over the micro lens array;

a protection layer disposed on the convex top surface of the on-wafer lens; and

an on-wafer shield structure spaced around and directly contacting sidewalls of the first substrate, the on-wafer lens, and the protection layer.

15. The image sensor according to claim 14 , further comprising:

additional module lens attached above the protection layer and the on-wafer shield structure; and

electrical connection structures disposed through the first substrate and connected from a back side of the first substrate opposite to the front side.

16. The image sensor according to claim 14 , wherein the on-wafer shield structure has a narrower lower portion adjoining the first substrate and a wider upper portion adjoining the protection layer.

17. The image sensor according to claim 14 , wherein the on-wafer filtering coating has a sidewall that directly contacts a sidewall of the on-wafer shield structure.

18. The image sensor according to claim 14 , further comprising a flatness layer arranged between the color filter array and the micro lens array.

19. The image sensor according to claim 18 , wherein the flatness layer has a sidewall directly contacting a sidewall of the on-wafer shield structure.

20. The image sensor according to claim 18 , wherein the on-wafer filtering coating has a bottom surface directly contacting the flatness layer.