Sputtering apparatus and method for fabricating semiconductor device using the same

1. A sputtering apparatus comprising:

a chamber;

a stage inside the chamber, the stage configured to receive a substrate thereon;

a first sputter gun configured to provide a sputtering source to an inside of the chamber;

a first RF source configured to provide a first power to the first sputter gun, the first power having a first frequency;

a second RF source configured to provide a second power to the first sputter gun, the second power having a second frequency lower than the first frequency; and

a chamber shield spaced apart from a side surface of the stage, the chamber shield extending from an area under the stage to be inclined toward an upper surface of the chamber such that the first sputter gun is projected onto a partial area on the chamber shield,

wherein a projection area on the chamber shield is spaced apart from the stage in a horizontal direction and does not overlap the stage in a vertical direction.

2. The sputtering apparatus of claim 1 , further comprising:

a second sputter gun spaced apart from the first sputter gun, the second sputter gun configured to provide the sputtering source to the inside of the chamber;

a third RF source configured to provide a third power to the second sputter gun, the third power having the first frequency; and

a fourth RF source configured to provide a fourth power to the second sputter gun, the fourth power having the second frequency.

3. The sputtering apparatus of claim 2 , wherein

the first sputter gun comprises a first target at a lower portion thereof,

the second sputter gun comprises a second target at a lower portion thereof, and

the first target and the second target comprise a same material.

4. The sputtering apparatus of claim 1 , further comprising:

a second sputter gun adjacent to the first sputter gun, the second sputter gun configured to provide the sputtering source to the inside of the chamber,

wherein the first RF source is further configured to provide the first power to the second sputter gun.

5. The sputtering apparatus of claim 4 , wherein

the first sputter gun comprises a first target, a lower surface of the first target inclined with respect to an upper surface of the stage, and

the second sputter gun comprises a second target, a lower surface of the second target inclined with respect to the upper surface of the stage.

6. The sputtering apparatus of claim 4 , wherein the first sputter gun and the second sputter gun overlap the stage in a vertical direction.

7. The sputtering apparatus of claim 1 , further comprising:

a gas inlet at an upper surface of the chamber shield, the gas inlet configured to allow a source gas to flow into the chamber.

8. The sputtering apparatus of claim 1 , wherein

the first sputter gun comprises a first target at a lower portion thereof,

the first sputter gun is configured to deposit an insulation film on the substrate by using the second RF source, and

the first sputter gun is configured to clean a lower surface of the first target by using the first RF source.

9. The sputtering apparatus of claim 1 , wherein each of the first frequency and the second frequency is between about 13.56 MHz and about 40.68 MHz.

10. The sputtering apparatus of claim 9 , wherein the first frequency is about 40.68 MHz, and the second frequency is about 13.56 MHz.

11. A sputtering apparatus comprising:

a chamber;

a stage inside the chamber, the stage configured to receive a substrate thereon;

a first sputter gun configured to provide a sputtering source to an inside of the chamber;

a first RF source configured to provide a first power to the first sputter gun, the first power having a first frequency;

a chamber shield spaced apart from a side surface of the stage, the chamber shield extending from an area under the stage to be inclined toward an upper surface of the chamber such that the first sputter gun is projected onto a partial area on the chamber shield; and

a gas inlet at the upper surface of the chamber shield, the gas inlet configured to allow a source gas to flow into the chamber,

wherein a projection area on the chamber shield is spaced apart from the stage in a horizontal direction and does not overlap the stage in a vertical direction.

12. The sputtering apparatus of claim 11 , further comprising:

a second RF source configured to provide a second power to the first sputter gun, the second power having a second frequency that is lower than the first frequency.

13. The sputtering apparatus of claim 12 , further comprising:

a second sputter gun spaced apart from the first sputter gun, the second sputter gun configured to provide the sputtering source to the inside of the chamber;

a third RF source configured to provide a third power to the second sputter gun, the third power having the first frequency; and

a fourth RF source configured to provide a fourth power to the second sputter gun, the fourth power having the second frequency.

14. The sputtering apparatus of claim 11 , further comprising:

a second sputter gun spaced apart from the first sputter gun, the second sputter gun configured to provide the sputtering source to the inside of the chamber; and

a third RF source configured to provide a third power to the second sputter gun, the third power having the first frequency.

15. The sputtering apparatus of claim 11 , further comprising:

a second sputter gun adjacent to the first sputter gun, the second sputter gun configured to provide the sputtering source to the inside of the chamber,

wherein the first RF source is further configured to provide the first power to the second sputter gun.

16. The sputtering apparatus of claim 15 , further comprising:

a second RF source configured to provide a second power to the first sputter gun and the second sputter gun, the second power having a second frequency that is lower than the first frequency.

17. The sputtering apparatus of claim 11 , wherein the first frequency is about 40.68 MHz.

18. A sputtering apparatus comprising:

a chamber;

a stage inside the chamber and configured to receive a substrate;

a first sputter gun and a second sputter gun configured to provide a sputtering source to an inside of the chamber, the first sputter gun and the second sputter gun spaced apart from each other;

a first RF source configured to provide a first power to the first sputter gun, the first power having a first frequency;

a second RF source configured to provide a second power to the first sputter gun, the second power having a second frequency lower than the first frequency;

a third RF source configured to provide a third power to the second sputter gun, the third power having the first frequency;

a fourth RF source configured to provide a fourth power to the second sputter gun, the fourth power having the second frequency;

a chamber shield spaced apart from a side surface of the stage, the chamber shield extending from an area under the stage to be inclined toward an upper surface of the chamber such that a corresponding one of the first sputter gun and the second sputter gun is projected onto a partial area on the chamber shield; and

a gas inlet at the upper surface of the chamber shield, the gas inlet configured to allow a source gas to flow into the chamber;

wherein a projection area on the chamber shield is spaced apart from the stage in a horizontal direction and does not overlap the stage in a vertical direction.

19. The sputtering apparatus of claim 18 , wherein

the first sputter gun comprises a first target at a lower portion thereof,

the second sputter gun comprises a second target at a lower portion thereof, and

each of the first target and the second target comprises a metallic oxide.

20. The sputtering apparatus of claim 18 , wherein the first frequency is about 40.68 MHz, and the second frequency is about 13.56 MHz.