Photonic component with distributed Bragg reflectors

1. A device, comprising:

a layer of semiconductor material;

a first Bragg reflector structure positioned in the layer of semiconductor material, the first Bragg reflector structure comprising a plurality of dielectric elements and a first internal area defined by an innermost of the first plurality of dielectric elements; and

an optical component positioned above the layer of semiconductor material, wherein at least a portion of the optical component is positioned within a vertical projection of the first internal area,

wherein the optical component includes a front surface, a back surface, a first side surface and a second side surface, and

wherein the plurality of dielectric elements include a first linear segment positioned adjacent the first side surface, a second linear segment positioned adjacent the second side surface and a third segment positioned adjacent the back surface.

2. The device of claim 1 , wherein, when viewed from above, the optical component has an outer perimeter and a second area, wherein the first internal area is greater than the second area and wherein the entirety of the outer perimeter of the optical component is positioned within the vertical projection of the first internal area.

3. The device of claim 1 , wherein the optical component is a portion of one of a photodetector, a coupler or a Fabry-Perot laser cavity.

4. The device of claim 1 , wherein the semiconductor material is an active semiconductor layer of a semiconductor-on-insulator (SOI) substrate.

5. The device of claim 4 , wherein the optical component is an intrinsic absorption region of a photodetector, and wherein the photodetector further comprises an active layer positioned under the intrinsic absorption region, the active layer comprising part of the active semiconductor layer of the SOI substrate.

6. The device of claim 4 , wherein the optical component is an upper body of a coupler, and wherein the coupler further comprises a lower body positioned under the upper body, the lower body comprising part of the active semiconductor layer of the SOI substrate.

7. The device of claim 4 , wherein each of the plurality of dielectric elements have a vertical thickness that is less than a vertical thickness of the active semiconductor layer of the SOI substrate.

8. The device of claim 4 , wherein each of the plurality of dielectric elements extend from an upper surface of the active semiconductor layer of the SOI substrate to an upper surface of a buried insulation layer of the SOI substrate.

9. The device of claim 1 , wherein each of the plurality of dielectric elements are continuous structures.

10. The device of claim 1 , wherein, when viewed from above, each of the plurality of dielectric elements have a U-shaped configuration.

11. The device of claim 1 , wherein the plurality of dielectric elements comprises an insulating material, silicon dioxide, silicon nitride, aluminum oxide, magnesium oxide or a material having a refractive index less than 1.6.

12. The device of claim 1 , wherein the third segment is a linear segment that intersects the first linear segment and the second linear segment.

13. The device of claim 1 , wherein each of the plurality of dielectric elements is non-continuous.

14. The device of claim 1 , wherein the third segment is not connected to the first segment or the second segments.

15. The device of claim 1 , further comprising a second plurality of dielectric elements positioned below the optical component and within the first internal area.

16. A device, comprising:

a layer of semiconductor material;

a first Bragg reflector structure positioned in the layer of semiconductor material, the first Bragg reflector structure comprising a plurality of dielectric elements and a first internal area defined by an innermost of the first plurality of dielectric elements; and

an optical component positioned above the layer of semiconductor material, wherein at least a portion of the optical component is positioned within a vertical projection of the first internal area,

wherein the optical component comprises a front surface, a back surface, a first side surface and a second side surface and wherein the plurality of dielectric elements comprise a first linear segment positioned adjacent the first side surface, a second linear segment positioned adjacent the second side surface and a non-linear segment positioned adjacent the back surface, the non-linear segment being connected to the first linear segment and the second linear segment.

17. The device of claim 16 , wherein, when viewed from above, the non-linear segment has an arcuate configuration.

18. A device, comprising:

a layer of semiconductor material;

a first Bragg reflector structure positioned in the layer of semiconductor material, the first Bragg reflector structure comprising a plurality of dielectric elements and a first internal area defined by an innermost of the first plurality of dielectric elements; and

an optical component positioned above the layer of semiconductor material, wherein at least a portion of the optical component is positioned within a vertical projection of the first internal area,

wherein the optical component comprises a front surface, a back surface, a first side surface, a second side surface and, when viewed from above, an outer perimeter, wherein the device further comprises a second Bragg reflector structure positioned above an upper surface of the layer of semiconductor material and around at least a portion of the outer perimeter of the optical component, the second Bragg reflector structure comprising a plurality of upper elements positioned above the upper surface of the layer of semiconductor material and a second internal area defined by an innermost of the plurality of upper elements.

19. The device of claim 18 , wherein the plurality of upper elements are arranged in a pattern that is a mirror image of a pattern of the plurality of dielectric elements.

20. The device of claim 18 , wherein a layer of insulating material is disposed between the upper surface of the layer of semiconductor material and a lower surface of the optical component.