Semiconductor device
View Patent ↗The semiconductor device of the present embodiment includes a lead frame having a projection portion, the projection portion having an upper face and a side face, a semiconductor chip provided above the projection portion, and a bonding material provided between the projection portion and the semiconductor chip, the bonding material being in contact with the upper face and the side face, the bonding material bonding the lead frame and the semiconductor chip.
1. A semiconductor device comprising:
a lead frame having a projection portion and a first upper face provided around the projection portion, the projection portion having a second upper face and a plurality of side faces, a shape of the second upper face being a rectangle, and the first upper face being directly connected with each of the side faces;
a semiconductor chip having a chip face, the semiconductor chip being provided above the projection portion, a width of the second upper face of the projection portion being shorter than a width of the chip face of the semiconductor chip, an area of the second upper face of the projection portion being smaller than an area of the chip face of the semiconductor chip; and
a bonding material provided between the projection portion and the semiconductor chip, the bonding material being in direct contact with the semiconductor chip, the second upper face of the projection portion and the side faces of the projection portion, and the bonding material bonding the lead frame and the semiconductor chip.
2. The semiconductor device according to claim 1 , wherein 0.7S 1 ≤S 2 ≤0.9S 1 is satisfied, where S 1 is an area of the chip face of the semiconductor chip and S 2 is an area of the second upper face of the projection portion.
3. The semiconductor device according to claim 2 , wherein a shape of the chip face and a shape of the second upper face are similar to each other.
4. The semiconductor device according to claim 1 , wherein the projection portion has a height of 20 μm or more and 35 μm or less.
5. The semiconductor device according to claim 1 , wherein an angle formed by the side face of the projection portion and the first upper face of the lead frame around the projection portion is greater than 90 degrees.
6. The semiconductor device according to claim 1 , wherein
the bonding material is in contact with the first upper face of the lead frame around the projection portion.
7. The semiconductor device according to claim 1 , wherein the bonding material has electrical conductivity.
8. The semiconductor device according to claim 1 , wherein a wire is not connected to the semiconductor chip.
9. The semiconductor device according to claim 1 , wherein an angle formed by the side face of the projection portion and the first upper face of the lead frame around the projection portion is 90 degrees.
10. The semiconductor device according to claim 1 , wherein the bonding material is provided apart from the first upper face of the lead frame around the projection portion.