IP Library Granted Patent US 12,648,475
Granted Patent B2
US 12,648,475 · App. 18/339,548 · Granted Jun 2, 2026

Self-aligning bonding by hydrophilic contrast

Inventors: Pierre Montmeat (Grenoble Cedex, FR); Frank Fournel (Grenoble Cedex, FR); Thierry Enot (Grenoble Cedex, FR)
Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
H10W74/01H10W72/01338H10W72/01371H10W72/0198H10W72/07311H10W72/07331
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Quick Facts
Patent No.
US 12,648,475
App. No.
18/339,548
Granted
Jun 2, 2026
Kind
B2
Abstract

A manufacturing method of a structure intended for assembly with another structure by self-aligning bonding by hydrophilic contrast, including the following successive steps: a) definition of pads on the side of the first face of a first substrate; b) transfer of a second substrate on the side of the first face of the first substrate; c) formation on the sides and/or on a peripheral part of the upper face of the pads, of a material more hydrophobic than a material of the upper face of the pads; and d) removal of the second substrate.

Claims (18)

1 . A manufacturing method for a structure intended to be assembled with another structure by self-aligning bonding by hydrophilic contrast, comprised of the following successive steps:

a) definition of pads on the side of a first face of a first substrate;

b) transfer of a second substrate on the side of the first face of the first substrate;

c) deposition, on the sides and/or on a surrounding part of the upper face of the pads of a material more hydrophobic than a material of the upper face of the pads;

d) removal of the second substrate; and

in which the material of the upper face of the pads and the material coating the side of the pads have a difference in water droplet contact angle greater than 20°.

2 . The manufacturing method according to claim 1 in which the first substrate comprises a semiconductor material.

3 . The manufacturing method according to claim 2 , in which the first substrate is a substrate of a semiconductor on insulator type.

4 . The manufacturing method according to claim 1 , in which the first face of the first substrate is coated with a layer of oxide.

5 . The manufacturing method according to claim 4 , in which the oxide layer on the first substrate comprises pads for metallic connections.

6 . The manufacturing method according to claim 1 , in which, at step b), the second substrate is fixed to the first substrate by molecular bonding.

7 . The manufacturing method according to claim 1 , in which step c) is carried out by treatment with HF vapor.

8 . The manufacturing method according to claim 1 , in which step c) is carried out by immersing the structure in a bath based on a fluorinated compound.

9 . The manufacturing method according to claim 1 , which comprises, before step c), a step of cutting the first substrate to form chips, each chip comprising a pad.

10 . The manufacturing method according to claim 1 , which comprises, after step a), a step of cleaning the first face of the first substrate.

11 . The manufacturing method according to claim 1 , in which the second substrate is structured so as to have a pad of non-zero thickness in line with each pad of the first substrate.

12 . The manufacturing method according to claim 1 , in which the pads of the first substrate have a non-zero thickness.

13 . A method for bonding a first structure and a second structure made by the process described according to claim 1 , comprising a step in which a droplet of water on the first face of the first substrate of the first structure and a step in which the second structure is transferred to the first structure, the first faces of the first substrates facing opposite other.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 2, 2023
From: MONTMEAT, PIERRE; FOURNEL, FRANK; ENOT, THIERRY
To: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
Reel/Frame 065087/0290 →
Priority Claims (1)
FR 2206445 · Jun 28, 2022 · national
Continuity (1)
Related Publication 20230420408A1 · Dec 28, 2023
References Cited (26)
US 5817242A · Biebuyck · 1998 [cited by examiner]
US 6565813B1 · Garyantes · 2003 [cited by examiner]
US 8274084B2 · Daniel · 2012 [cited by examiner]
US 8283208B2 · Koyanagi · 2012 [cited by examiner]
US 8664106B2 · Iwatsu · 2014 [cited by examiner]
US 8722513B2 · Lee · 2014 [cited by examiner]
US 9519105B1 · Shubin · 2016 [cited by examiner]
US 9773741B1 · Gu · 2017 [cited by examiner]
US 9871014B2 · Haba · 2018 [cited by examiner]
US 11121117B2 · Di Cioccio · 2021 [cited by examiner]
US 11152533B1 · Thompson · 2021 [cited by examiner]
US 11342249B2 · Seki · 2022 [cited by examiner]
US 11437352B2 · Kim · 2022 [cited by examiner]
US 20100248424A1 · Luce · 2010 [cited by examiner]
US 20110193211A1 · Chandrasekaran · 2011 [cited by examiner]
US 20120291950A1 · Sugiyama · 2012 [cited by examiner]
US 20130140713A1 · Yu · 2013 [cited by examiner]
US 20130273328A1 · Zheng · 2013 [cited by examiner]
US 20140080261A1 · Arase et al. · 2014 [cited by applicant]
US 20180301433A1 · Robin et al. · 2018 [cited by applicant]
US 20200020665A1 · Di Cioccio · 2020 [cited by examiner]
FR 3063832A1 · 2018 [cited by applicant]
WO WO2021151684A1 · 2021 [cited by applicant]
FR2206445, Feb. 9, 2023, Preliminary Search Report. [cited by applicant]
Preliminary Search Report for French Application No. 2206445, dated Feb. 9, 2023. [cited by applicant]
Mermoz et al., High density chip-to-wafer integration using self-assembly: on the performances of directly interconnected structures made by direct copper/oxyde bonding. 2013 IEEE 15th Electronics Packaging Technology C… [cited by applicant]