Masking block that is configured in a pattern for direct synthesis of a two-dimensional material having the pattern on a growth substrate and that is easily bondable to and debondable from the growth substrate

1. A masking block configured to contact a growth substrate to define a pattern of a two-dimensional material directly synthesized on the growth substrate, the masking block comprising:

a base substrate;

a gamma-alumina film that is disposed on the base substrate and that has an upper surface in which a (110) plane is dominant as being more than 50%; and

a hexagonal boron nitride film that is doped with carbon and oxygen, that is disposed on the gamma-alumina film,

wherein the hexagonal boron nitride film contains an amount of carbon ranging from 1 at % to 15 at % based on total atoms of carbon, oxygen, nitrogen and boron in the hexagonal boron nitride film, and

wherein the hexagonal boron nitride film includes voids such that a coverage ratio of the hexagonal boron nitride film on the gamma-alumina film is less than 1 and equal to or more than 0.9, and

wherein the upper surface of the gamma-alumina film has a root mean square roughness of 1 nm or less.

2. The masking block of claim 1 , wherein the hexagonal boron nitride film contains an amount of oxygen ranging from 1 at % to 10 at % based on the total atoms of carbon, oxygen, nitrogen and boron in the hexagonal boron nitride film.

3. The masking block of claim 1 , wherein the hexagonal boron nitride film is a monolayer or a bilayer and has a thickness ranging up to and including 1 nm.

4. The masking block of claim 1 , wherein the gamma-alumina film has a thickness ranging from 5 nm to 50 nm.

5. The masking block of claim 1 , wherein the gamma-alumina film has a thickness ranging from 5 nm to 10 nm.

6. A method for forming a pattern, the method comprising:

pressing the masking block of claim 1 on a growth substrate to adhere the masking block to the growth substrate;

providing a source material to the growth substrate to form a pattern of a two-dimensional material; and

debonding the masking block from the growth substrate.

7. The method of claim 6 , wherein the two-dimensional material includes graphene, and the pattern is formed selectively at a contact interface between the masking block and the growth substrate.

8. The method of claim 7 , wherein the pattern including graphene is synthesized in an atmosphere including a carbon source and an oxygen-containing material.

9. The method of claim 6 , wherein the two-dimensional material includes hexagonal boron nitride or a transitional metal dichalcogenide, and the pattern is formed selectively on an exposed surface of the growth substrate, which is not adhered to the masking block.

10. A masking block configured to contact a growth substrate to define a pattern of a two-dimensional material directly synthesized on the growth substrate, the masking block comprising:

a base substrate;

a gamma-alumina film that is disposed on the base substrate and that has an upper surface in which a (110) plane is dominant as being more than 50%; and

a hexagonal boron nitride film that is doped with carbon and oxygen, that is disposed on the gamma-alumina film,

wherein the hexagonal boron nitride film contains an amount of carbon ranging from 1 at % to 15 at % based on total atoms of carbon, oxygen, nitrogen and boron in the hexagonal boron nitride film, and

wherein the hexagonal boron nitride film includes voids such that a coverage ratio of the hexagonal boron nitride film on the gamma-alumina film is less than 1 and equal to or more than 0.9, and

wherein the upper surface of the gamma-alumina film has an (111) plane, and wherein a sum of the (110) plane and the (111) plane in the upper surface of the gamma-alumina film is equal to or more than 99% thereof.