Photolithography device having illuminator and method for adjusting intensity uniformity

1. An illuminator, comprising:

a first facet mirror, receiving and reflecting an exposure radiation, the first facet mirror comprising a plurality of first facet elements arranged in a grid, and the plurality of first facet elements reflecting the exposure radiation;

a shielding element, disposed on the first facet mirror, the shielding element comprising a first adjustable shielding element installed on a central region of the first facet mirror and at least one second adjustable shielding element installed on a periphery region of the first facet mirror, the central region being surrounded by the periphery region, the at least one second adjustable shielding element comprising a first periphery adjustable shielding element and a second periphery adjustable shielding element, a first group of first facet elements among the plurality of first facet elements being surrounded by the first adjustable shielding element and the first periphery adjustable shielding element, and a second group of first facet elements among the plurality of first facet elements being surrounded by the first adjustable shielding element and the second periphery adjustable shielding element; and

a second facet mirror, receiving and reflecting the exposure radiation reflected by the plurality of first facet elements of the first facet mirror.

2. The illuminator according to claim 1 , wherein the exposure radiation is an extreme ultraviolet radiation.

3. The illuminator according to claim 1 , wherein the second facet mirror comprises a plurality of second facet elements arranged in a grid, and each first facet element among the plurality of first facet elements respectively reflects the exposure radiation to at least one second facet element among the plurality of second facet elements.

4. The illuminator according to claim 1 , wherein the shielding element shields portions of the plurality of first facet elements of the first facet mirror.

5. The illuminator according to claim 1 , wherein the first periphery adjustable shielding element and the second periphery adjustable shielding element respectively comprises movable fingers capable of extending toward the first adjustable shielding element.

6. The illuminator according to claim 5 , wherein

the first adjustable shielding element comprises first movable fingers and second movable fingers, the first movable fingers are capable of extending toward the first periphery adjustable shielding element to partially shield the first group of first facet elements, and the second movable fingers are capable of extending toward the second periphery adjustable shielding element to partially shield the second group of first facet elements.

7. A photolithography device, comprising:

a light source, providing an exposure radiation;

an illuminator, receiving the exposure radiation and comprising a first facet mirror and a second facet mirror, wherein the first facet mirror comprises a shielding element and a plurality of first facet elements arranged in a grid, the shielding element comprising at least one first adjustable shielding element installed on a central region of the first facet mirror and at least one second adjustable shielding element installed on a periphery region of the first facet mirror, the central region being surrounded by the periphery region, the at least one second adjustable shielding element comprising a first periphery adjustable shielding element and a second periphery adjustable shielding element, a first group of first facet elements among the plurality of first facet elements being surrounded by the first adjustable shielding element and the first periphery adjustable shielding element, and a second group of first facet elements among the plurality of first facet elements being surrounded by the first adjustable shielding element and the second periphery adjustable shielding element;

a reticle stage, wherein the exposure radiation propagating in the illuminator is reflected by the first facet mirror and the second facet mirror sequentially, and the exposure radiation reflected by the second facet mirror is irradiated onto a reticle carried by the reticle stage;

a projection system; and

a wafer stage, wherein the exposure radiation reflected by the reticle is projected onto a semiconductor wafer carried by the wafer stage through the projection system.

8. The photolithography device according to claim 7 , further comprising a second shielding element, wherein the second shielding element is disposed on a light propagation path between the second facet mirror and the reticle stage.

9. The photolithography device according to claim 8 , wherein a first distance between the second shielding element and the reticle stage is less than a second distance between the second shielding element and the second facet mirror.

10. The photolithography device according to claim 7 , wherein the exposure radiation is an extreme ultraviolet radiation.

11. The photolithography device according to claim 7 , wherein the second facet mirror comprises a plurality of second facet elements arranged in a grid, and each first facet element among the first facet elements respectively reflects the exposure radiation to at least one second facet element among the second facet elements.

12. The photolithography device according to claim 7 , wherein the shielding element shields portions of the first facet elements of the first facet mirror.

13. The photolithography device according to claim 7 , wherein the first periphery adjustable shielding element and the second periphery adjustable shielding element respectively comprises movable fingers capable of extending toward the first adjustable shielding element.

14. The photolithography device according to claim 7 , wherein the first adjustable shielding element comprises first movable fingers and second movable fingers, the first movable fingers are capable of extending toward the first periphery adjustable shielding element to partially shield the first group of first facet elements, and the second movable fingers are capable of extending toward the second periphery adjustable shielding element to partially shield the second group of first facet elements.

15. A method, comprising:

providing an illuminator comprising a first facet mirror and a second facet mirror, wherein the first facet mirror comprises a shielding element disposed thereon, the shielding element comprises at least one first adjustable shielding element installed on a central region of the first facet mirror and at least one second adjustable shielding element installed on a periphery region of the first facet mirror, the central region is surrounded by the periphery region, the at least one second adjustable shielding element comprises a first periphery adjustable shielding element and a second periphery adjustable shielding element, a first group of first facet elements among the plurality of first facet elements are surrounded by the first adjustable shielding element and the first periphery adjustable shielding element, and a second group of first facet elements among the plurality of first facet elements are surrounded by the first adjustable shielding element and the second periphery adjustable shielding element;

irradiating an exposure radiation onto the first facet mirror and the shielding element; and

adjusting intensity uniformity of the exposure radiation reflected by the first facet mirror through the first adjustable shielding element.

16. The method according to claim 15 , wherein the exposure radiation is provided from a light source comprising a collector, and the intensity uniformity of the exposure radiation reflected by the first facet mirror is adjusted based on contamination of the collector.

17. The method according to claim 16 , wherein the exposure radiation is an extreme ultraviolet radiation, the exposure radiation is provided from a light source comprising a collector, and coverage of the first adjustable shielding element is adjusted to correspond to a non-contamination region of the collector.

18. The method according to claim 17 , wherein the first adjustable shielding element is adjusted to partially shield the first facet mirror in accordance with the contamination region of the collector.

19. The method according to claim 15 , further comprising:

adjusting intensity uniformity of the exposure radiation reflected by the second facet mirror through a second adjustable shielding element.

20. The method according to claim 15 , further comprising:

irradiating the exposure radiation reflected by the second facet mirror on a reticle; and

projecting the exposure radiation irradiated on the reticle onto a photoresist layer on a semiconductor wafer to perform a photolithography process.