Semiconductor device package and method of manufacturing the same

1. A semiconductor device package, comprising:

a first electronic component having a first surface and a second surface opposite the first surface;

a first pad disposed on the first surface of the first electronic component, wherein the first pad has a first surface facing away from the first surface of the first electronic component, a second surface opposite the first surface of the first pad, and a lateral surface extended between the first surface of the first pad and the second surface of the first pad;

a second pad disposed on the first surface of the first pad, wherein the second pad has a first surface facing away from the first surface of the first pad, a second surface opposite the first surface of the second pad, and a lateral surface extended between the first surface of the second pad and the second surface of the second pad; and

a dielectric layer disposed on the first surface of the first electronic component and covering the first surface and the lateral surface of the first pad;

wherein a width of the first surface of the second pad is greater than a width of the second surface of the second pad; and

wherein the dielectric layer fully covers the lateral surface of the second pad and exposes the first surface of the second pad.

2. The semiconductor device package of claim 1 , wherein a width of the first surface of the first pad is greater than a width of the second surface of the first pad.

3. The semiconductor device package of claim 1 , wherein a width of the first surface of the first pad is greater than a width of the second surface of the second pad.

4. The semiconductor device package of claim 1 , wherein the first pad and the second pad taper toward the first surface of the first electronic component.

5. The semiconductor device package of claim 1 , further comprises:

a second electronic component having a surface facing the first surface of the first electronic component; and

a conductive pillar electrically connecting the surface of the second electronic component with the first surface of the second pad.

6. The semiconductor device package of claim 1 , further comprises:

a package body disposed on the dielectric layer and surrounding a portion of the dielectric layer fully covering the lateral surface of the second pad.

7. The semiconductor device package of claim 6 , wherein the dielectric layer and the package body define an interface, the interface having a first portion proximal to the first pad and second portion distal from the first pad; and wherein the first portion of the interface is recessed from the second portion of the interface.

8. The semiconductor device package of claim 7 , wherein a roughness of the first portion is greater than a roughness of the second portion.

9. The semiconductor device package of claim 7 , wherein the portion of the dielectric layer fully covering the lateral surface of the second pad has a surface approximately perpendicular to the second portion of the interface.

10. A semiconductor device package, comprising:

a first electronic component having a first surface and a second surface opposite the first surface;

a first pad disposed on the first surface of the first electronic component, wherein the first pad has a first surface and a second surface;

a second pad disposed on the first surface of the first pad, wherein the second pad has a first surface and a second surface;

a second electronic component having a surface facing the first surface of the first electronic component;

a conductive pillar electrically connecting the surface of the second electronic component with the first surface of the second pad; and

a dielectric layer disposed on the first surface of the first electronic component and covering the first surface of the first pad;

wherein a width of the second surface of the second pad is smaller a width of the second surface of the first pad;

wherein the dielectric layer has a surface facing away from the first surface of the first electronic component, the surface of the dielectric layer having a first portion proximal to the first pad and second portion distal from the first pad; and

wherein the first portion is recessed from the second portion.

11. The semiconductor device package of claim 10 , wherein a width of the first surface of the second pad is greater than a width of the second surface of the second pad.

12. The semiconductor device package of claim 10 , wherein the dielectric layer fully covers a lateral surface of the second pad that extended between the first surface of the second pad and the second surface of the second pad.

13. The semiconductor device package of claim 10 , wherein a roughness of the first portion is greater than a roughness of the second portion.

14. A method of manufacturing a semiconductor device package, comprising:

providing an electronic component;

disposing a first photoresist on the electronic component, the first photoresist having an opening;

forming a first conductive layer in the opening, the first conductive layer having a first surface exposed from the first photoresist;

disposing a second photoresist to cover the first surface of the first conductive layer;

removing a part of the second photoresist to expose a part of the first surface of the first conductive layer;

forming a second conductive layer on the exposed part of first surface of the first conductive layer;

disposing a dielectric layer on the electronic component to cover a lateral surface of the second conductive layer; and

removing a portion of the dielectric layer to form a recessing portion on the dielectric layer.