IP Library › Granted Patent US 11,367,630
Granted Patent B2
US 11,367,630 · App. 17/007,085 · Granted Jun 21, 2022

Substrate cleaning method, substrate cleaning system, and memory medium

Inventors: Miyako Kaneko (Nirasaki, JP); Keiji Tanouchi (Nirasaki, JP); Takehiko Orii (Nirasaki, JP); Itaru Kanno (Minato-ku, JP); Meitoku Aibara (Koshi, JP); Satoru Tanaka (Koshi, JP)
Assignee: TOKYO ELECTRON LIMITED
H01L21/67051H01L21/0206H01L21/02052H01L21/02057
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,367,630
App. No.
17/007,085
Granted
Jun 21, 2022
Kind
B2
Abstract

A method for cleaning a substrate includes supplying to a substrate on which a resist layer is not formed a film-forming processing liquid which includes a volatile component and forms a film on the substrate, forming a processing film on the substrate by solidifying or curing the film-forming processing liquid supplied on the substrate, and supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate.

Claims (30)

1. A method for cleaning a substrate, comprising:

supplying to a substrate on which a resist layer is not formed a film-forming processing liquid which includes a volatile component and forms a film on the substrate;

forming a processing film on the substrate by solidifying or curing the film-forming processing liquid supplied on the substrate;

supplying to the substrate having the processing film a strip processing liquid which strips the processing film from the substrate such that the strip-processing liquid infiltrates the processing film and reaches an interface between the substrate and the processing film and that the processing film is dissolved and stripped in a film state from the substrate; and

supplying a dissolving-processing liquid which dissolves the processing film to the substrate such that the processing film stripped in the film state from the substrate is dissolved on the substrate,

wherein the strip-processing liquid is pure water, and the dissolving-processing liquid comprises an alkali developing solution.

2. The method for cleaning a substrate according to claim 1 , wherein the substrate has a surface having a pattern formed on the surface of the substrate, and the supplying of the film-forming processing liquid comprises supplying the film-forming processing liquid to the surface having the pattern.

3. The method for cleaning a substrate according to claim 2 , wherein the forming of the processing film comprises solidifying or curing the film-forming processing liquid such that strain is generated by volume contraction of the processing film and strips particles attached to the pattern on the surface of the substrate from the pattern.

4. The method for cleaning a substrate according to claim 1 , wherein the supplying of the strip-processing liquid comprises a plurality of supplying steps.

5. The method for cleaning a substrate according to claim 1 , wherein the pure water is heated pure water.

6. The method for cleaning a substrate according to claim 4 , wherein the supplying of the strip-processing liquid includes supplying the pure water in one step and supplying a second strip-processing liquid comprising an alkaline solution in another step.

7. The method for cleaning a substrate according to claim 4 , wherein the supplying of the strip-processing liquid includes supplying the pure water in one step and supplying a second strip-processing liquid comprising a developing solution including ammonia in another step.

8. The method for cleaning a substrate according to claim 4 , wherein the substrate has a surface having a pattern formed on the surface of the substrate, and the supplying of the film-forming processing liquid comprises supplying the film-forming processing liquid to the surface having the pattern.

9. The method for cleaning a substrate according to claim 8 , wherein the forming of the processing film comprises solidifying or curing the film-forming processing liquid such that strain is generated by volume contraction of the processing film and strips particles attached to the pattern on the surface of the substrate from the pattern.

10. The method for cleaning a substrate according to claim 2 , wherein the supplying of the strip-processing liquid comprises a plurality of supplying steps.

11. The method for cleaning a substrate according to claim 2 , wherein the pure water is heated pure water.

12. The method for cleaning a substrate according to claim 10 , wherein the supplying of the strip-processing liquid includes supplying the pure water in one step and supplying a second strip-processing liquid comprising an alkaline solution in another step.

13. The method for cleaning a substrate according to claim 10 , wherein the supplying of the strip-processing liquid includes supplying the pure water in one step and supplying a second strip-processing liquid comprising a developing solution including ammonia in another step.

14. The method for cleaning a substrate according to claim 3 , wherein the supplying of the strip-processing liquid comprises a plurality of supplying steps.

15. The method for cleaning a substrate according to claim 3 , wherein the pure water is heated pure water.

16. The method for cleaning a substrate according to claim 14 , wherein the supplying of the strip-processing liquid includes supplying the pure water in one step and supplying a second strip-processing liquid comprising an alkaline solution in another step.

17. A non-transitory computer readable medium including a program for controlling a substrate cleaning system, which when executed by a processor of the substrate cleaning system, the program controls the substrate cleaning system to execute the method for cleaning a substrate according to claim 1 .

18. A method for cleaning a substrate, comprising:

supplying to a substrate on which a resist layer is not formed a film-forming processing liquid which includes a volatile component and forms a film on the substrate;

forming a processing film on the substrate by solidifying or curing the film-forming processing liquid supplied on the substrate;

supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate such that the strip-processing liquid infiltrates the processing film and reaches an interface between the substrate and the processing film and that the processing film is dissolved and stripped in a film state from the substrate; and

supplying a dissolving-processing liquid which dissolves the processing film to the substrate such that the processing film stripped in the film state from the substrate is dissolved on the substrate,

wherein the dissolving-processing liquid comprises an alkali developing solution, and the strip-processing liquid comprises an alkali developing solution having a concentration that is lower than a concentration of the alkali developing solution of the dissolving-processing liquid.

19. The method for cleaning a substrate according to claim 18 , wherein the substrate has a surface having a pattern formed on the surface of the substrate, and the supplying of the film-forming processing liquid comprises supplying the film-forming processing liquid to the surface having the pattern.

20. The method for cleaning a substrate according to claim 19 , wherein the forming of the processing film comprises solidifying or curing the film-forming processing liquid such that strain is generated by volume contraction of the processing film and strips particles attached to the pattern on the surface of the substrate from the pattern.

Priority Claims (2)
JP 2013-234843 · Nov 13, 2013 · national
JP 2014-163839 · Aug 11, 2014 · national
Continuity (3)
Continuation 15904539 · Feb 26, 2018
Division 14539174 · Nov 12, 2014
Related Publication 20200395230A1 · Dec 17, 2020
Cited By (1)
US 12,276,027