Display panel and method of fabricating the same
A display panel includes: a base layer; a signal line disposed on the base layer, the signal line including: a first layer including aluminum; and a second layer directly disposed on the first layer, the second layer including a niobium-titanium alloy; a first thin film transistor connected to the signal line; a second thin film transistor disposed on the base layer; a capacitor electrically connected to the second thin film transistor; and a light emitting element electrically connected to the second thin film transistor.
1. A display panel, comprising:
a base layer;
a signal line disposed on the base layer, the signal line comprising:
a first layer comprising aluminum and nickel, the content of the nickel relative to the first layer ranging from 0.01 at % to 0.05 at %; and
a second layer disposed directly on the first layer, the second layer comprising a niobium-titanium alloy directly contacting the first layer;
a first thin film transistor connected to the signal line;
a second thin film transistor disposed on the base layer;
a capacitor electrically connected to the second thin film transistor; and
a light emitting element electrically connected to the second thin film transistor.
2. The display panel of claim 1 , wherein the first thin film transistor comprises:
a first poly silicon pattern disposed on the base layer;
a first control electrode overlapping the first poly silicon pattern and connected to the signal line; and
a first input electrode and a first output electrode, each of which is connected to the first poly silicon pattern.
3. The display panel of claim 2 , wherein the first control electrode has substantially a same stacking structure as the signal line.
4. The display panel of claim 2 , wherein the second thin film transistor comprises:
a second poly silicon pattern disposed on the base layer;
a second control electrode overlapping the second poly silicon pattern and disposed on a layer different from that under the first control electrode;
a second input electrode and a second output electrode, each of which is connected to the second poly silicon pattern.
5. The display panel of claim 4 , wherein the capacitor comprises:
a first electrode disposed on substantially a same layer as that under the signal line; and
a second electrode disposed on substantially a same layer as that under the second control electrode, and
wherein the first electrode has substantially a same stacking structure as the signal line.
6. The display panel of claim 5 , wherein the second control electrode and the second electrode comprise:
a first layer comprising an aluminum-nickel-lanthanum alloy; and
a second layer disposed directly on the first layer and comprising a niobium-titanium alloy.
7. The display panel of claim 1 , wherein the first layer further comprises:
lanthanum, the content of the lanthanum relative to the first layer ranging from 0.02 at % to 0.05 at %.
8. The display panel of claim 7 , wherein:
the content of the titanium relative to the second layer ranges from 5 at % to 50 at %; and
the content of the niobium relative to the second layer ranges from 50 at % to 95 at %.
9. The display panel of claim 1 , wherein the signal line has a line width that ranges from 3 μm to 5 μm.
10. The display panel of claim 1 , wherein:
the thickness of the first layer ranges from 1000 Å to 3000 Å; and
the second layer has a thickness that ranges from 300 Å to 1000 Å.
11. The display panel of claim 1 , further comprising a third layer disposed on the second layer, the third layer comprising titanium.
12. The display panel of claim 11 , wherein:
the first layer has a thickness that ranges from 1000 Å to 3000 Å;
the second layer has a thickness that ranges from 200 Å to 400 Å; and
the third layer has a thickness that ranges from 300 Å to 800 Å.
13. The display panel of claim 1 , wherein the signal line comprises at least one of a data line, a gate line, a control signal line, a power line, and a connecting line.
14. A display panel, comprising:
a base layer;
a first thin film transistor disposed on the base layer;
a second thin film transistor electrically connected to the first thin film transistor; and
a light emitting element connected to the second thin film transistor,
wherein the first thin film transistor comprises:
a first poly silicon pattern disposed on the base layer;
a first control electrode overlapping the first poly silicon pattern, the first control electrode comprising:
a first layer comprising an aluminum-nickel-lanthanum alloy, the content of the nickel relative to the first layer ranging from 0.01 at % to 0.05 at %; and
a second layer disposed directly on the first layer, the second layer comprising a niobium-titanium alloy directly contacting the first layer; and
a first input electrode and a first output electrode, each of which is connected to the first poly silicon pattern.
15. The display panel of claim 14 , wherein the first thin film transistor further comprises a third layer disposed directly on the second layer, the third layer comprising titanium.