Display device and method of manufacturing the display device
A display device includes: a wiring line on a first inorganic insulating layer; a second inorganic insulating layer covering the wiring line; and a display element on the second inorganic insulating layer, wherein the wiring line includes: a lower layer including at least one of aluminum (Al) or an aluminum (Al) alloy; an upper layer on the lower layer and including a niobium titanium (Nb x Ti y ) alloy; and an intermediate layer arranged between the lower layer and the upper layer and including at least one of a niobium titanium aluminum (Nb x Ti y Al z ) alloy or a titanium aluminum (Ti x Al y ) alloy.
1 . A display device comprising:
a wiring line on a first inorganic insulating layer;
a second inorganic insulating layer covering the wiring line; and
a display element on the second inorganic insulating layer,
wherein the wiring line comprises:
a lower layer including at least one of aluminum (Al) or an aluminum (Al) alloy;
an upper layer on the lower layer and including a niobium titanium (Nb x Ti y ) alloy; and
an intermediate layer between the lower layer and the upper layer and including at least one of a niobium titanium aluminum (Nb x Ti y Al z ) alloy or a titanium aluminum (Ti x Al y ) alloy.
2 . The display device of claim 1 , wherein, in the niobium titanium (Nb x Ti y ) alloy of the upper layer, an amount of titanium (Ti) is in a range of 5 at % or more and 50 at % or less.
3 . The display device of claim 1 , wherein a thickness of the upper layer is in a range of 30 Å or more and 1,000 Å or less.
4 . The display device of claim 1 , wherein the upper layer includes a first upper layer on the intermediate layer and a second upper layer on the first upper layer,
wherein the first upper layer includes titanium (Ti), and the second upper layer includes a niobium titanium (Nb x Ti y ) alloy.
5 . The display device of claim 4 , wherein the intermediate layer includes a titanium aluminum (Ti x Al y ) alloy.
6 . The display device of claim 4 , wherein a thickness of the first upper layer is less than a thickness of the second upper layer.
7 . The display device of claim 4 , wherein a thickness of the second upper layer is in a range of 30 Å or more and 1,000 Å or less.
8 . The display device of claim 1 , wherein the wiring line further includes an oxide layer on a side surface of the lower layer, a side surface of the intermediate layer, and a side surface and an upper surface of the upper layer.
9 . The display device of claim 8 , wherein a thickness of the oxide layer is in a range of 10 nm to 40 nm.
10 . The display device of claim 1 , wherein the aluminum (Al) alloy includes at least one of nickel (Ni), lanthanum (La), neodymium (Nd), or germanium (Ge).
11 . The display device of claim 10 , wherein, in the aluminum (Al) alloy, an amount of at least one of nickel (Ni), lanthanum (La), neodymium (Nd), or germanium (Ge) is in a range of 0.01 at % to 2 at %.
12 . The display device of claim 10 , wherein, in the aluminum (Al) alloy, an amount of nickel (Ni) is in a range of 0.01 at % to 0.05 at % and an amount of lanthanum (La) is in a range of 0.01 at % to 0.1 at %.
13 . A method of manufacturing a display device, the method comprising:
preparing a lower conductive layer on a first inorganic insulating layer and including at least one of aluminum (Al) or an aluminum (Al) alloy, and an upper conductive layer on the lower conductive layer and including a niobium titanium (NbTi) alloy;
dry-etching a portion of the lower conductive layer and a portion of the upper conductive layer to provide a lower layer and an upper layer on the lower layer; and
forming, between the lower layer and the upper layer, an intermediate layer including at least one of a niobium titanium aluminum (Nb x Ti y Al z ) alloy or a titanium aluminum (Ti x Al y ) alloy by performing a heat treatment of the lower layer and the upper layer.
14 . The method of claim 13 , wherein the dry-etching of the portion of the lower conductive layer and the portion of the upper conductive layer comprises:
forming a photoresist pattern on the upper conductive layer;
dry-etching the portion of the lower conductive layer and the portion of the upper conductive layer by using the photoresist pattern as a mask; and
removing the photoresist pattern.
15 . The method of claim 13 , wherein, in the niobium titanium (Nb x Ti y ) alloy of the upper layer, an amount of titanium (Ti) is in a range of 5 at % or more and 50 at % or less.
16 . The method of claim 13 , wherein the upper conductive layer includes a plurality of layers, and includes a layer including a niobium titanium (Nb x Ti y ) alloy and a titanium (Ti) layer between the lower conductive layer and the layer including the niobium titanium (Nb x Ti y ) alloy, and
the upper layer includes a first upper layer including titanium (Ti) and a second upper layer on the first upper layer and including a niobium titanium (Nb x Ti y ) alloy.
17 . The method of claim 16 , wherein the intermediate layer includes a titanium aluminum (Ti x Al y ) alloy.
18 . The method of claim 13 , wherein the forming of the intermediate layer comprises generating inter-diffusion between the lower layer and the upper layer.
19 . The method of claim 13 , wherein the heat treatment is performed at 350° C. to 500° C.
20 . The method of claim 13 , wherein the forming of the intermediate layer comprises forming an oxide layer covering a side surface of each of the lower layer, the intermediate layer, and the upper layer and at least a portion of an upper surface of the upper layer.