Bonding wire for semiconductor device
Provided is a Pd coated Cu bonding wire for a semiconductor device capable of sufficiently obtaining bonding reliability of a ball bonded portion in a high temperature environment of 175° C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases. The bonding wire for a semiconductor device comprises a Cu alloy core material; and a Pd coating layer formed on a surface of the Cu alloy core material; and contains 0.03 to 2% by mass in total of one or more elements selected from Ni, Rh, Ir and Pd in the bonding wire and further 0.002 to 3% by mass in total of one or more elements selected from Li, Sb, Fe, Cr, Co, Zn, Ca, Mg, Pt, Sc and Y. The bonding wire can be sufficiently obtained bonding reliability of a ball bonded portion in a high temperature environment of 175° C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases by being used.
1. A bonding wire for a semiconductor device, the bonding wire comprising: a Cu alloy core material; and a Pd coating layer formed on a surface of the Cu alloy core material, wherein the bonding wire contains at least one of first alloy element group and Pd, and the first alloy element group is one or more elements selected from the group consisting of Ni, Rh, and Ir, wherein a total content of the first alloy element group and Pd is 0.03 to 2% by mass, a content of the first alloy element group is a content of the first alloy element group in an entirety of the bonding wire, a content of Pd is a content of Pd in the Cu alloy core material only, and in a case of absence of the first alloy element group, the content of Pd in the Cu alloy core material is 0.05% by mass or more, and wherein the bonding wire contains 0.1% by mass or more to 3% by mass of Mg.
2. The bonding wire for a semiconductor device according to claim 1 , wherein a thickness of the Pd coating layer is 0.015 to 0.150 μm.
3. The bonding wire for a semiconductor device according to claim 2 , further comprising an alloy skin layer containing Au and Pd on the Pd coating layer.
4. The bonding wire for a semiconductor device according to claim 1 , further comprising an alloy skin layer containing Au and Pd on the Pd coating layer.
5. The bonding wire for a semiconductor device according to claim 4 , wherein a thickness of the alloy skin layer containing Au and Pd is 0.050 μm or less.
6. The bonding wire for a semiconductor device according to claim 1 , wherein the bonding wire further contains 0.03 to 3% by mass in total of one or more elements selected from Al, Ga, Ge and In.
7. The bonding wire for a semiconductor device according to claim 6 , wherein the bonding wire further contains 0.03 to 3% by mass in total of one or more elements selected from Al and In.
8. The bonding wire for a semiconductor device according to claim 1 , wherein the bonding wire further contains 0.1 to 1000 ppm by mass in total of one or more elements selected from As, Te, Sn, Bi and Se, where at least one of the following conditions: (a) when Sn is present, a content of Sn is 10 ppm or less; and (b) when Bi is present, a content of Bi is 1 ppm or less is satisfied.
9. The bonding wire for a semiconductor device according to claim 1 , wherein the bonding wire further contains 0.1 to 200 ppm by mass in total of one or more elements selected from B, P and La.
10. The bonding wire for a semiconductor device according to claim 9 , wherein the bonding wire further contains 0.1 to 200 ppm by mass in total of La.
11. The bonding wire for a semiconductor device according to claim 1 , wherein Cu is present at an outermost surface of the bonding wire.
12. The bonding wire for a semiconductor device according to claim 1 , wherein the first alloy element group contains Rh.
13. The bonding wire for a semiconductor device according to claim 1 , wherein the bonding wire contains 0.002 to 3% by mass in total of one or more elements selected from Li, Sb, Fe, Cr, Co, Zn, Ca, Sc and Y.