Semiconductor device and method for manufacturing the same
It is an object to manufacture and provide a highly reliable display device including a thin film transistor with a high aperture ratio which has stable electric characteristics. In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation region is formed using an oxide semiconductor film, a heat treatment for reducing moisture and the like which are impurities and for improving the purity of the oxide semiconductor film (a heat treatment for dehydration or dehydrogenation) is performed. Further, an aperture ratio is improved by forming a gate electrode layer, a source electrode layer, and a drain electrode layer using conductive films having light transmitting properties.
1. A semiconductor device comprising:
a pixel, the pixel comprising:
a storage capacitor; and
a transistor, the transistor comprising:
a gate electrode layer over a substrate with an insulating surface;
a gate insulating layer over the gate electrode layer;
an oxide semiconductor layer over the gate insulating layer;
a source electrode layer having a region in contact with a top surface of the oxide semiconductor layer;
a drain electrode layer having a region in contact with the top surface of the oxide semiconductor layer; and
an insulating layer over the source electrode layer and the drain electrode layer;
a pixel electrode layer over the insulating layer,
wherein the pixel electrode layer is in contact with a top surface of one of the source electrode layer and the drain electrode layer via an opening in the insulating layer,
wherein the pixel electrode has a region overlapping with an electrode comprising a metal oxide via the insulating layer, and
wherein the electrode functions as one electrode of the storage capacitor.
2. A semiconductor device comprising:
a pixel, the pixel comprising:
a storage capacitor; and
a transistor, the transistor comprising:
a gate electrode layer over a substrate with an insulating surface;
a gate insulating layer over the gate electrode layer;
an oxide semiconductor layer over the gate insulating layer;
a source electrode layer having a region in contact with a top surface of the oxide semiconductor layer;
a drain electrode layer having a region in contact with the top surface of the oxide semiconductor layer; and
an insulating layer over the source electrode layer and the drain electrode layer;
a pixel electrode layer over the insulating layer; and
a light-emitting layer over the pixel electrode layer,
wherein the pixel electrode layer is in contact with a top surface of one of the source electrode layer and the drain electrode layer via an opening in the insulating layer,
wherein the pixel electrode has a region overlapping with an electrode comprising a metal oxide via the insulating layer,
wherein the electrode functions as one electrode of the storage capacitor, and
wherein light emitted from the light-emitting layer is emitted to a transistor side.
3. A semiconductor device comprising:
a pixel, the pixel comprising:
a storage capacitor; and
a transistor, the transistor comprising:
a gate electrode layer over and in contact with a substrate with an insulating surface;
a gate insulating layer over the gate electrode layer;
a first oxide semiconductor layer over the gate insulating layer;
a second oxide semiconductor layer over the first oxide semiconductor layer;
a source electrode layer having a region in contact with a top surface of the second oxide semiconductor layer;
a drain electrode layer having a region in contact with the top surface of the second oxide semiconductor layer; and
an insulating layer over the source electrode layer and the drain electrode layer;
a pixel electrode layer over the insulating layer; and
a light-emitting layer over the pixel electrode layer,
wherein the pixel electrode layer is in contact with a top surface of one of the source electrode layer and the drain electrode layer via an opening in the insulating layer,
wherein the pixel electrode has a region overlapping with an electrode comprising a metal oxide via the insulating layer,
wherein the electrode functions as one electrode of the storage capacitor, and
wherein light emitted from the light-emitting layer is emitted to a transistor side.
4. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer comprises In, Ga, and Zn.
5. The semiconductor device according to claim 2 , wherein the oxide semiconductor layer comprises In, Ga, and Zn.
6. The semiconductor device according to claim 3 , wherein the first oxide semiconductor layer comprises In, Ga, and Zn.
7. The semiconductor device according to claim 1 , wherein each of the oxide semiconductor layer and the metal oxide comprises In, Ga, and Zn.
8. The semiconductor device according to claim 2 , wherein each of the oxide semiconductor layer and the metal oxide comprises In, Ga, and Zn.
9. The semiconductor device according to claim 3 , wherein each of the first oxide semiconductor layer and the metal oxide comprises In, Ga, and Zn.
10. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer comprises a crystalline region.
11. The semiconductor device according to claim 2 , wherein the oxide semiconductor layer comprises a crystalline region.
12. The semiconductor device according to claim 3 , wherein the first oxide semiconductor layer comprises a crystalline region.