IP Library › Granted Patent US 11,379,231
Granted Patent B2
US 11,379,231 · App. 17/074,872 · Granted Jul 5, 2022

Data processing system and operation method of data processing system

Inventors: Shunpei Yamazaki (Setagaya, JP); Hajime Kimura (Atsugi, JP); Tatsuya Onuki (Atsugi, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
G06F9/3001G06F9/3004G11C11/4023G11C11/4085G11C11/4093G11C11/4094
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,379,231
App. No.
17/074,872
Granted
Jul 5, 2022
Kind
B2
Abstract

To provide a data processing system that includes a nonvolatile memory device capable of storing multilevel data and enables increasing storage capacity of a main memory device when the data processing system is activated. The data processing system includes an arithmetic processing device, a main memory device, and a nonvolatile memory device. The main memory device includes a volatile memory device, and the nonvolatile memory device is configured to store multilevel data in one memory cell. When the data processing system is deactivated, the nonvolatile memory device stores binary data, whereby the stored data can be held for a long time. Upon activation, the nonvolatile memory device stores multilevel data, whereby increasing storage capacity. When the storage capacity is increased, a free space is generated in the nonvolatile memory device, which can be used as a part of the main memory device of the data processing system.

Claims (45)

1. A data processing system, comprising:

an arithmetic processing device; and

a nonvolatile memory device,

wherein the nonvolatile memory device comprises a plurality of memory cells,

wherein the nonvolatile memory device is configured to store s-bit (s is an integer greater than or equal to 1) data in each of the memory cells when the data processing system is not activated,

wherein the nonvolatile memory device is configured to store t-bit (t is an integer greater than or equal to 2) data in each of the memory cells when the data processing system is activated,

wherein an integer value of s is smaller than an integer value of t,

wherein the arithmetic processing device is configured to perform arithmetic processing using the nonvolatile memory device when the data processing system is activated,

wherein when power is not supplied to the data processing system the data processing system is not activated, and

wherein when the power is supplied to the data processing system the data processing system is activated.

2. The data processing system according to claim 1 , wherein the integer value of s is 1.

3. The data processing system according to claim 1 ,

wherein each of the memory cells comprises a transistor, and

wherein the transistor comprises a metal oxide in a channel formation region.

4. A data processing system, comprising:

an arithmetic processing device;

a first memory device; and

a second memory device,

wherein the second memory device is a nonvolatile memory device,

wherein the second memory device comprises a plurality of memory cells,

wherein the second memory device is configured to store s-bit (s is an integer greater than or equal to 1) data in each of the memory cells when the data processing system is not activated,

wherein the second memory device is configured to store t-bit (t is an integer greater than or equal to 2) data in each of the memory cells when the data processing system is activated,

wherein an integer value of s is smaller than an integer value of t,

wherein the arithmetic processing device is configured to perform arithmetic processing using the first memory device and the second memory device when the data processing system is activated,

wherein when power is not supplied to the data processing system the data processing system is not activated, and

wherein when the power is supplied to the data processing system the data processing system is activated.

5. The data processing system according to claim 4 , wherein the integer value of s is 1.

6. The data processing system according to claim 4 ,

wherein each of the memory cells comprises a transistor, and

wherein the transistor comprises a metal oxide in a channel formation region.

7. An operation method of a data processing system comprising an arithmetic processing device and a nonvolatile memory device,

wherein the nonvolatile memory device comprises a plurality of memory cells,

wherein the nonvolatile memory device is configured to store s-bit (s is an integer greater than or equal to 1) data in each of the memory cells when the data processing system is not activated,

wherein the nonvolatile memory device is configured to store t-bit (t is an integer greater than or equal to 2) data in each of the memory cells when the data processing system is activated,

wherein an integer value of s is smaller than an integer value of t,

wherein the arithmetic processing device is configured to perform arithmetic processing using the nonvolatile memory device when the data processing system is activated,

wherein when power is not supplied to the data processing system the data processing system is not activated, and

wherein when the power is supplied to the data processing system the data processing system is activated.

8. The operation method of the data processing system according to claim 7 , wherein the integer value of s is 1.

9. The operation method of the data processing system according to claim 7 ,

wherein each of the memory cells comprises a transistor, and

wherein the transistor comprises a metal oxide in a channel formation region.

10. The operation method of the data processing system according to claim 7 ,

wherein the data processing system further comprises a first memory device, and

wherein the arithmetic processing device is configured to perform arithmetic processing using the first memory device and the nonvolatile memory device when the data processing system is activated.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 20, 2020
From: YAMAZAKI, SHUNPEI; KIMURA, HAJIME; ONUKI, TATSUYA
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 054112/0005 →
Priority Claims (1)
JP JP2019-194589 · Oct 25, 2019 · national
Continuity (1)
Related Publication 20210124578A1 · Apr 29, 2021
Cited By (1)
US 12,237,019