IP Library › Granted Patent US 11,380,652
Granted Patent B2
US 11,380,652 · App. 16/635,501 · Granted Jul 5, 2022

Multi-level distributed clamps

Inventors: Beomseok Choi (Chandler, AZ); Kaladhar Radhakrishnan (Chandler, AZ); William Lambert (Chandler, AZ); Michael Hill (Gilbert, AZ); Krishna Bharath (Chandler, AZ)
Assignee: Intel Corporation
H01L25/0657H01L23/5223H01L23/5286H01L25/50H01L2225/06513H01L2225/06544
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Quick Facts
Patent No.
US 11,380,652
App. No.
16/635,501
Granted
Jul 5, 2022
Kind
B2
Abstract

An apparatus is provided which comprises: a first set of one or more contacts on a first die surface, the first set of one or more contacts to couple with contacts of an integrated circuit die, one or more multi-level voltage clamps coupled with the first set of one or more contacts, the one or more multi-level voltage clamps switchable between two or more voltages, one or more integrated voltage regulators coupled with the one or more multi-level voltage clamps, the one or more integrated voltage regulators to provide an output voltage, one or more through silicon vias (TSVs) coupled with the one or more integrated voltage regulators, and a second set of one or more contacts on a second die surface, opposite the first die surface, the second set of one or more contacts coupled with the one or more TSVs, and the second set of one or more contacts to couple with contacts of a package substrate. Other embodiments are also disclosed and claimed.

Claims (34)

1. An integrated circuit device package comprising:

a package substrate coupled with a die stack, wherein the die stack comprises:

a first die; and

a second die coupled with the first die, wherein the second die comprises:

a first set of one or more contacts on a first surface, the first set of one or more contacts coupled with contacts of the first die;

two or more groupings of multi-level voltage clamps coupled with the first set of one or more contacts, the two or more groupings of multi-level voltage clamps present in separate areas of the second die at different densities;

one or more integrated voltage regulators coupled with the two or more groupings of multi-level voltage clamps, the one or more integrated voltage regulators to provide an output voltage;

one or more through silicon vias (TSVs) coupled with the one or more integrated voltage regulators; and

a second set of one or more contacts on a second surface, opposite the first surface, the second set of one or more contacts coupled with the one or more TSVs, and the second set of one or more contacts coupled with contacts of the package substrate.

2. The integrated circuit device package of claim 1 , wherein the first set of one or more contacts comprise pairs of contacts comprising a power contact and a ground contact.

3. The integrated circuit device package of claim 2 , wherein the first set of one or more contacts comprise micro bumps.

4. The integrated circuit device package of claim 2 , wherein the second set of one or more contacts comprise controlled collapse chip connection (C4) bumps.

5. The integrated circuit device package of claim 1 , further comprising a capacitor coupling the power contact with the ground contact.

6. The integrated circuit device package of claim 1 , wherein the one or more multi-level voltage clamps comprise a switchable voltage from the one or more integrated voltage regulators.

7. The integrated circuit device package of claim 1 , wherein the one or more multi-level voltage clamps comprise a switchable voltage internally regulated.

8. A system comprising:

a printed circuit board;

one or more memory components coupled with the printed circuit board; and

an integrated circuit device package coupled with the printed circuit board, wherein the integrated circuit device package comprises:

a package substrate coupled with a die stack, wherein the die stack comprises:

a first die; and

a second die coupled with the first die, wherein the second die comprises:

a first set of one or more contacts on a first surface, the first set of one or more contacts coupled with contacts of the first die;

two or more groupings of multi-level voltage clamps coupled with the first set of one or more contacts, the two or more groupings of multi-level voltage clamps present in separate areas of the second die at different densities;

one or more integrated voltage regulators coupled with the two or more groupings of multi-level voltage clamps, the one or more integrated voltage regulators to provide an output voltage;

one or more through silicon vias (TSVs) coupled with the one or more integrated voltage regulators; and

 a second set of one or more contacts on a second surface, opposite the first surface, the second set of one or more contacts coupled with the one or more TSVs, and the second set of one or more contacts coupled with contacts of the package substrate.

9. The system of claim 8 , wherein the first set of one or more contacts comprise pairs of contacts comprising a power contact and a ground contact.

10. The system of claim 9 , wherein the first set of one or more contacts comprise micro bumps.

11. The system of claim 9 , wherein the second set of one or more contacts comprise controlled collapse chip connection (C4) bumps.

12. The system of claim 8 , further comprising a capacitor coupling the power contact with the ground contact.

13. The system of claim 8 , wherein the one or more multi-level voltage clamps comprise a switchable voltage from the one or more integrated voltage regulators.

14. The system of claim 8 , wherein the one or more multi-level voltage clamps comprise a switchable voltage internally regulated.

15. The system of claim 8 , wherein the one or more multi-level voltage clamps are coupled with the one or more TSVs to receive an input voltage.

Continuity (1)
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