Semiconductor device having nanosheet transistor and methods of fabrication thereof
Embodiments of the present disclosure provide semiconductor device structures having at least one T-shaped stacked nanosheet transistor to provide increased effective conductive area across the channel regions. In one embodiment, the semiconductor device structure includes a first channel layer formed of a first material, wherein the first channel layer has a first width, and a second channel layer formed of a second material different from the first material, wherein the second channel layer has a second width less than the first width, and the second channel layer is in contact with the first channel layer. The structure also includes a gate dielectric layer conformally disposed on the first channel layer and the second channel layer, and a gate electrode layer disposed on the gate dielectric layer.
1. A semiconductor device structure, comprising:
a first channel layer formed of a first material, wherein the first channel layer has a first width;
a second channel layer formed of a second material different from the first material, wherein the second channel layer has a second width less than the first width, and the second channel layer is in contact with the first channel layer, and wherein the second channel layer has a height that is greater than the second width;
a gate dielectric layer conformally disposed on the first channel layer and the second channel layer; and
a gate electrode layer disposed on the gate dielectric layer.
2. The semiconductor device structure of claim 1 , wherein the first material comprises silicon, and the second material comprises germanium.
3. The semiconductor device structure of claim 1 , further comprising:
a third channel layer formed of the first material, wherein the third channel layer has a third width substantially similar to the first width, and the third channel layer is in contact with the second channel layer;
a fourth channel layer formed of the first material, wherein the fourth channel layer has a fourth width substantially similar to the first width; and
a fifth channel layer formed of the second material, wherein the fifth channel layer has a fifth width less than the first width, and the fifth channel layer is disposed between and in contact with the third channel layer and the fourth channel layer.
4. The semiconductor device structure of claim 3 , wherein the fifth width is less than the second width.
5. The semiconductor device structure of claim 3 , wherein the second channel layer has a first tapered portion in contact with the first channel layer and a second tapered portion in contact with the third channel layer.
6. The semiconductor device structure of claim 3 , wherein the fourth channel layer has a first surface in contact with the fifth channel layer, a second surface opposing the first surface, and a side surface connecting the first surface to the second surface, and wherein the entire second surface is in contact with the gate dielectric layer.
7. The semiconductor device structure of claim 3 , wherein the second channel layer is formed of the second material having a first germanium atomic percentage range, and the fifth channel layer is formed of the second material having a second germanium atomic percentage range same or substantially similar to the first germanium atomic percentage range.
8. The semiconductor device structure of claim 3 , further comprising:
a sixth channel layer formed of the second material, wherein the sixth channel layer has a sixth width less than the first width, and the sixth channel layer is in contact with the fourth channel layer.
9. The semiconductor device structure of claim 8 , wherein the sixth width is less than the second width.
10. The semiconductor device structure of claim 9 , wherein the sixth channel layer has a third germanium atomic percentage range greater than the first germanium atomic percentage range.
11. The semiconductor device structure of claim 1 , further comprising:
a third channel layer formed of the first material, wherein the third channel layer has a third width substantially similar to the first width, and the third channel layer is in contact with the second channel layer;
a fourth channel layer formed of the first material, wherein the fourth channel layer has a fourth width substantially similar to the first width, and the gate dielectric layer is disposed to surround the fourth channel layer.
12. The semiconductor device structure of claim 11 , wherein the second channel layer has a first tapered portion in contact with the first channel layer and a second tapered portion in contact with the third channel layer.
13. A semiconductor device structure, comprising:
a plurality of first channel layers formed of a first material, wherein each of the plurality of the first channel layer has a first width;
two or more second channel layers formed of a second material different from the first material, wherein each of the two or more second channel layers has a width less than the first width, and each of the two or more second channel layers is interposed between and in contact with the plurality of the first channel layers, and wherein each of the two or more second channel layers has a height that is greater than the width of each of the two or more second cannel layers;
a gate dielectric layer conformally disposed on and wrapping each of the plurality of the first channel layers and each of the two or more second channel layers; and
a gate electrode layer disposed on the gate dielectric layer.
14. The semiconductor device structure of claim 13 , wherein at least one of the two or more second channel layers has a second width and at least one of the two or more second channel layers has a third width different than the second width.
15. The semiconductor device structure of claim 13 , wherein the first material comprises silicon, and the second material comprises germanium.
16. The semiconductor device structure of claim 15 , wherein at least one of the two or more second channel layers is formed of the second material having a first germanium atomic percentage range, and at least one of the two or more second channel layers is formed of the second material having a second germanium atomic percentage range different than the first germanium atomic percentage range.
17. The semiconductor device structure of claim 13 , wherein each of the two or more second channel layers has a first portion in contact with the first channel layer, a second portion opposing the first portion, and a third portion connecting the first portion to the second portion, and wherein the first portion and the second portion have a fourth width, and the third portion has a fifth width different than fourth width.
18. A semiconductor device structure, comprising:
a first channel layer formed of a first material, wherein the first channel layer has a first width;
a second channel layer formed of the first material, wherein the second channel layer has a second width corresponding to the first width;
a third channel layer formed of a second material different from the first material, wherein the second channel layer comprises:
a first portion in contact with the first channel layer;
a second portion opposing the first portion and in contact with the second channel layer, the second portion having a third width less than the first width; and
a third portion disposed between and in contact with the first portion and the second portion, wherein the first portion and the second portion each has a fourth width and a fifth width greater than the fourth width, and wherein the fourth width corresponds to the third width and the fifth width is less than the first width;
a gate dielectric layer conformally disposed on the first channel layer and the second channel layer; and
a gate electrode layer disposed on the gate dielectric layer.
19. The semiconductor device structure of claim 18 , wherein the third channel layer has a height that is greater than the fifth width.
20. The semiconductor device structure of claim 18 , further comprising:
a fourth channel layer formed of the first material; and
a fifth channel layer formed of the second material, wherein the fifth channel layer is disposed between and in contact with the fourth channel layer and the second channel layer, and the fifth channel layer has a sixth width less than the third width.