Method for improving ohmic contact behaviour between a contact grid and an emitter layer of a silicon solar cell
The invention relates to a method for improving ohmic contact behaviour between a contact grid and an emitter layer of a silicon solar cell. The object of the invention is to propose a method for improving contact behaviour between the contact grid and the emitter layer of silicon solar cells, which method is used after the contacting of these solar cells and thus reduces the scrap quota of solar cells with faulty contacting. In order to achieve this object, a method is proposed which has the following method steps. First a silicon solar cell ( 1 ) is provided with the emitter layer, the contact grid ( 5 ) and a back contact ( 3 ). Then the contact grid ( 5 ) is electrically contacted by a contact pin matrix ( 8 ) or contact plate connected to one terminal of a current source and the back contact ( 3 ) is electrically connected by a contact device connected to the other terminal of the current source. Using the current source, at least one current pulse is induced along the forward direction of the silicon solar cell ( 1 ), the current pulse having a pulse duration of 1 ms to 100 ms and a current strength which is equivalent to 10 to 30 times the short-circuit current strength of the silicon solar cell ( 1 ). Two alternative methods are also proposed.
1. A method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell, the method comprising:
preparing a silicon solar cell having an emitter layer, a contact grid made of a metal paste and a rear contact;
electrically contacting the contact grid of the silicon solar cell with a first contacting device connected to one pole of a current source;
electrically contacting the rear contact of the silicon solar cell with a second contacting device connected to the other pole of the current source; and
inducing at least one current pulse with a pulse length of 1 ms to 100 ms and a current magnitude corresponding to 10-to-30 times the short-circuit magnitude of the silicon solar cell measured under standard test conditions along the forward direction of the silicon solar cell.
2. The method of claim 1 , wherein the first contacting device is a contact-pin matrix or a contact plate.
3. A method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell, the method comprising:
preparing a silicon solar cell having an emitter layer, a contact grid made of a metal paste and a rear contact;
electrically contacting a subsection of the contact grid of the silicon solar cell by means of a contact brush or contact roller connected to one pole of a current source;
electrically connecting the rear contact of the silicon solar cell by means of a contacting device connected to the other pole of the current source; and
guiding the contact brush or the contact roller over the contact grid and inducing a current flow along the forward direction of the silicon solar cell by means of the current source and exposing the subsection to the current flow for 1 ms to 100 ms, the current having a magnitude corresponding to 10-to-30 times the short-circuit magnitude of the silicon solar cell reduced by the ratio of the area of the subsection to the area of the silicon solar cell measured under standard test conditions.
4. A method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell, the method comprising:
preparing a silicon solar cell having an emitter layer, a contact grid made of a metal paste and a rear contact;
electrically contacting the contact grid of the silicon solar cell to one pole of a voltage source;
connecting a contacting device, the contacting device being electrically connected to the other pole of the voltage source, to the rear contact of the silicon solar cell;
applying, with the voltage source, a voltage directed opposite to the forward direction of the silicon solar cell, the applied voltage being lower than the breakdown voltage;
guiding a point light source over the sun-facing side of the silicon solar cell while the voltage is applied; and
point illuminating a subsection of the sun-facing side, inducing a current to flow in the partial area, where the current acts on the subsection for 1 ms to 100 ms, the current being of a magnitude corresponding to 10-to-30 times the short-circuit current magnitude of the silicon solar cell reduced by the ratio of the area of the subsection to the area of the silicon solar cell measured under standard test conditions.
5. The method of claim 4 , wherein the point light source is a laser.