Structure and formation method of semiconductor device with hybrid fins
A structure and a formation method of a semiconductor device are provided. The semiconductor device structure includes a semiconductor substrate and an isolation structure over the semiconductor substrate. The semiconductor device structure also includes a first fin structure over the semiconductor substrate and surrounded by the isolation structure and a stack of nanostructures over the first fin structure. The nanostructures are separated from each other. The semiconductor device structure further includes a second fin structure over the semiconductor substrate. The second fin structure has an embedded portion surrounded by the isolation structure and a protruding portion over the isolation structure. The embedded portion is separated from the protruding portion by a distance.
1. A semiconductor device structure, comprising:
a semiconductor substrate;
an isolation structure over the semiconductor substrate;
a first fin structure over the semiconductor substrate and surrounded by the isolation structure;
a stack of nanostructures over the first fin structure, wherein the nanostructures are separated from each other;
a second fin structure over the semiconductor substrate, wherein the second fin structure has an embedded portion surrounded by the isolation structure and a protruding portion over the isolation structure, and the embedded portion is separated from the protruding portion by a distance; and
a metal gate stack over the nanostructures, wherein the metal gate stack comprises a gate dielectric layer and a work function layer, and the work function layer is prevented from being between a bottom of the nanostructures and the first fin structure by the gate dielectric layer.
2. The semiconductor device structure as claimed in claim 1 , wherein a total height of the stack of the nanostructures is greater than a total height of the first fin structure.
3. The semiconductor device structure as claimed in claim 2 , wherein a total height of the protruding portion of the second fin structure is greater than a total height of the embedded portion of the second fin structure.
4. The semiconductor device structure as claimed in claim 3 , wherein a total height of the protruding portion of the second fin structure is greater than a total height of the stack of the nanostructures.
5. The semiconductor device structure as claimed in claim 1 , wherein a total height of the protruding portion of the second fin structure is greater than a total height of the stack of nanostructures.
6. The semiconductor device structure as claimed in claim 1 , wherein the metal gate stack wraps around each of the nanostructures.
7. The semiconductor device structure as claimed in claim 6 , wherein a portion of the gate dielectric layer separates the bottom of the nanostructures from the first fin structure.
8. The semiconductor device structure as claimed in claim 1 , a portion of the gate dielectric layer is between the embedded portion and the protruding portion.
9. The semiconductor device structure as claimed in claim 8 , wherein the portion of the gate dielectric layer has a thickness substantially equal to the distance between the embedded portion and the protruding portion.
10. A semiconductor device structure, comprising:
a semiconductor substrate;
a stack of nanostructures, wherein the nanostructures are separated from each other;
a fin structure over the semiconductor substrate, wherein a top of the fin structure is at a higher height level than a top of the nanostructures; and
a metal gate stack wrapping around each of the nanostructures and extending across the fin structure, wherein the metal gate stack comprises a gate dielectric layer and a work function layer, and the work function layer is prevented from being between a bottom of the nanostructures and the semiconductor substrate by the gate dielectric layer.
11. The semiconductor device structure as claimed in claim 10 , wherein a first portion of the gate dielectric layer is between a bottom of the nanostructures and the semiconductor substrate, and a second portion of the gate dielectric layer is between a bottom of the fin structure and the semiconductor substrate.
12. The semiconductor device structure as claimed in claim 10 , further comprising:
an isolation structure over the semiconductor substrate;
a first embedded fin surrounded by the isolation structure and directly below the stack of the nanostructures, wherein a top of the first embedded fin and a bottom of the nanostructures are separated from each other, and a total height of the nanostructures is greater than a total height of the first embedded fin; and
a second embedded fin surrounded by the isolation structure and directly below the fin structure, wherein a top of the second embedded fin and a bottom of the fin structure are separated from each other, and a total height of the fin structure is greater than a total height of the second embedded fin.
13. The semiconductor device structure as claimed in claim 1 , wherein the gate dielectric layer wraps around a sidewall and a top of the embedded portion of the second fin structure.
14. The semiconductor device structure as claimed in claim 10 , wherein the work function layer is prevented from being between a bottom of the fin structure and the semiconductor substrate by the gate dielectric layer.
15. The semiconductor device structure as claimed in claim 10 , wherein a first portion of the gate dielectric layer wrapping around the nanostructures is substantially as thick as a second portion of the gate dielectric layer wrapping around the fin structure.
16. A semiconductor device structure, comprising:
a semiconductor substrate;
a stack of nanostructures suspended over the semiconductor substrate, wherein the nanostructures are separated from each other;
a semiconductor structure suspended over the semiconductor substrate, wherein the semiconductor structure is longer than each of the nanostructures; and
a metal gate stack wrapping around the nanostructures, wherein the metal gate stack comprises a gate dielectric layer and a work function layer, and the work function layer is prevented from being between a bottommost surface of the nanostructures and the semiconductor substrate by the gate dielectric layer.
17. The semiconductor device structure as claimed in claim 16 , wherein the work function layer is prevented from being between a bottommost surface of the semiconductor structure and the semiconductor substrate by the gate dielectric layer.
18. The semiconductor device structure as claimed in claim 17 , wherein the metal gate stack further wraps around the semiconductor structure.
19. The semiconductor device structure as claimed in claim 18 , wherein a first portion of the gate dielectric layer is between the semiconductor substrate and the bottommost surface of the nanostructures, and a second portion of the gate dielectric layer is between the semiconductor substrate and a bottommost surface of the semiconductor structure.
20. The semiconductor device structure as claimed in claim 17 , wherein a topmost surface of the nanostructures is closer to the semiconductor substrate than a topmost surface of the semiconductor structure.