Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

1. A method of manufacturing a semiconductor device, comprising:

(a) forming a protective film on a surface of a third base by supplying a processing gas to a substrate in which a first base containing no oxygen, a second base containing oxygen, and the third base containing no oxygen and no nitrogen are exposed on a surface of the substrate;

(b) modifying a surface of the second base to be fluorine-terminated by supplying a fluorine-containing gas to the substrate after the protective film is formed on the surface of the third base; and

(c) selectively forming a film on a surface of the first base by supplying a film-forming gas to the substrate after the surface of the second base is modified.

2. The method according to claim 1 , wherein the protective film contains oxygen.

3. The method according to claim 2 , wherein in (a), the protective film is formed by supplying an oxygen-containing gas as the processing gas to oxidize the surface of the third base.

4. The method according to claim 3 , wherein in (a), the surface of the third base is oxidized by dry oxidation.

5. The method according to claim 3 , wherein in (a), the surface of the third base is oxidized under a pressure lower than an atmospheric pressure.

6. The method according to claim 3 , wherein in (a), the surface of the third base is oxidized under a condition in which the surface of the first base is not oxidized.

7. The method according to claim 2 , wherein in (b), a surface of the protective film is modified to be fluorine-terminated.

8. The method according to claim 1 , wherein in (b), the surface of the second base is modified to be fluorine-terminated without etching.

9. The method according to claim 1 , wherein in (b), the fluorine-containing gas is supplied to the substrate in an atmosphere in which silicon exists.

10. The method according to claim 1 , wherein in (b), the surface of the second base is modified to be fluorine-terminated by sequentially performing:

(b1) supplying an aminosilane-based gas to the substrate; and

(b2) supplying the fluorine-containing gas to the substrate.

11. The method according to claim 10 , wherein in (b1), silicon contained in the aminosilane-based gas is adsorbed on the surface of the second base, and

wherein in (b2), the surface of the second base is fluorine-terminated by reacting the silicon adsorbed on the surface of the second base with the fluorine-containing gas.

12. The method according to claim 11 , wherein in (b1), the silicon contained in the aminosilane-based gas is adsorbed on a surface of the protective film, and

wherein in (b2), the surface of the protective film is fluorine-terminated by reacting the silicon adsorbed on the surface of the protective film with the fluorine-containing gas.

13. The method according to claim 1 , further comprising: (d) removing a natural oxide film formed on the surface of the substrate before performing (a).

14. The method according to claim 13 , wherein in (d), a material of the first base is exposed.

15. The method according to claim 14 , wherein in (d), a material of the third base is exposed.

16. The method according to claim 1 , wherein the first base includes a nitride film, the second base includes an oxide film, and the third base includes a semiconductor material.

17. The method according to claim 1 , wherein the first base contains silicon and nitrogen, the second base contains silicon and oxygen, and the third base contains silicon.

18. The method according to claim 1 , wherein the first base includes a silicon nitride film, the second base includes a silicon oxide film, and the third base includes a single crystalline silicon, an epitaxial silicon film, a polycrystalline silicon film, or an amorphous silicon film.

19. A substrate processing apparatus, comprising:

a process chamber in which a substrate is processed;

a processing gas supply system configured to supply a processing gas to the substrate in the process chamber;

a fluorine-containing gas supply system configured to supply a fluorine-containing gas to the substrate in the process chamber;

a film-forming gas supply system configured to supply a film-forming gas to the substrate in the process chamber; and

a controller configured to be capable of controlling the processing gas supply system, the fluorine-containing gas supply system, and the film-forming gas supply system so as to perform a process in the process chamber, the process comprising:

(a) forming a protective film on a surface of a third base by supplying the processing gas to the substrate in which a first base containing no oxygen, a second base containing oxygen, and the third base containing no oxygen and no nitrogen are exposed on a surface of the substrate;

(b) modifying a surface of the second base to be fluorine-terminated by supplying the fluorine-containing gas to the substrate after the protective film is formed on the surface of the third base; and

(c) selectively forming a film on a surface of the first base by supplying the film-forming gas to the substrate after the surface of the second base is modified.

20. A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process in a process chamber of the substrate processing apparatus, the process comprising:

(a) forming a protective film on a surface of a third base by supplying a processing gas to a substrate in which a first base containing no oxygen, a second base containing oxygen, and the third base containing no oxygen and no nitrogen are exposed on a surface of the substrate;

(b) modifying a surface of the second base to be fluorine-terminated by supplying a fluorine-containing gas to the substrate after the protective film is formed on the surface of the third base; and

(c) selectively forming a film on a surface of the first base by supplying a film-forming gas to the substrate after the surface of the second base is modified.