Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.
1. A method of forming a structure, the method comprising the steps of:
providing a substrate within a reaction chamber, the substrate comprising a surface comprising a first material and a second material, the first material comprising an oxide and the second material comprising a nitride;
treating the first material with a plasma treatment to generate —OH terminals on the first material; and
selectively depositing a layer comprising silicon nitride on the second material relative to the first material.
2. The method of claim 1 , wherein the step of selectively depositing comprises atomic layer deposition.
3. The method of claim 1 , wherein a temperature of a susceptor within the reaction chamber during the step of selectively depositing is between about 100° C. and about 500° C.
4. The method of claim 1 , wherein the step of treating comprises generating a plasma comprising noble gas species and hydrogen species.
5. The method of claim 4 , wherein the noble gas comprises argon.
6. The method of claim 4 , wherein a source gas for the hydrogen species comprises hydrogen.
7. The method of claim 1 , wherein a plasma for the plasma treatment is formed using a noble gas and a gas comprising hydrogen and wherein a ratio of the noble gas to gas comprising hydrogen ranges from about 0.1:1 to about 1:0.1.
8. The method of claim 1 , further comprising a step of densifying the layer comprising silicon nitride.
9. The method of claim 8 , wherein the step of densifying comprises exposing the layer comprising silicon nitride to a plasma comprising one or more noble gases.
10. The method of claim 9 , wherein the step of densifying comprises exposing the layer comprising silicon nitride to a plasma comprising helium.
11. The method of claim 10 , wherein a ratio of argon to helium is between about 0.1:0.9 and about 0.9:0.1.
12. The method of claim 1 , wherein the first material comprises an oxide selected from the group consisting of a Group IV oxide and a metal oxide.
13. The method of claim 1 , wherein the second material comprises a nitride selected from the group consisting of a Group IV nitride and a metal nitride.
14. A method of forming a structure, the method comprising the steps of:
providing a substrate within a reaction chamber, the substrate comprising a surface comprising a first material and a second material, the first material comprising an oxide and the second material comprising a nitride;
treating the first material with a plasma treatment formed using a noble gas and a gas comprising hydrogen to generate —OH terminals on the first material;
selectively depositing a layer comprising silicon nitride on the second material relative to the first material; and
densifying the layer comprising silicon nitride.
15. The method of claim 14 , wherein the step of selectively depositing comprises atomic layer deposition.