IP Library › Granted Patent US 11,424,140
Granted Patent B2
US 11,424,140 · App. 17/035,023 · Granted Aug 23, 2022

Member, method of manufacturing the same, apparatus for manufacturing the same, and semiconductor manufacturing apparatus

Inventors: Changhwan Kim (Suwon-si, KR); Toshihiro Iizuka (Kanagawa Pref, JP); Kenichi Nagayama (Kanagawa Pref, JP); Takafumi Noguchi (Kanagawa Pref, JP)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H01L21/67069B05B7/14B05C15/00B05C19/008B05D1/12
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Quick Facts
Patent No.
US 11,424,140
App. No.
17/035,023
Granted
Aug 23, 2022
Kind
B2
Abstract

A member includes a base material structure and a surface layer on the base material structure. The surface layer includes a particle that includes Y—O—F. The base material structure includes interface layers in contact with the surface layer. The interface layers of the base material structure include fluorine.

Claims (22)

1. A manufacturing apparatus for a member, the manufacturing apparatus comprising:

a chamber that includes a base material structure, wherein the base material structure includes a planar surface, and a surface layer formed on the planar surface; and

a nozzle disposed in the chamber,

wherein the nozzle is open inside of the chamber,

wherein the nozzle sprays a raw material powder onto the planar surface to form the surface layer, and

wherein a particle incident angle formed by a spray axis of the raw material powder and the planar surface is equal to or less than 30 degrees,

wherein the surface layer includes a particle that includes Y—O—F,

wherein the base material structure includes an interface layer in contact with the surface layer and a base body in contact with the interface layer thereof, wherein the interface layer of the base material structure includes a first layer and a second layer,

wherein the interface layer of the base material structure includes fluorine,

wherein the second layer is closer to the base body than the first layer, and

wherein the second layer has a fluorine content that is greater than that of the first layer.

2. The manufacturing apparatus of claim 1 , wherein

an X-ray diffraction peak intensity ratio of a (1 5 1) plane with respect to a (1 0 0) plane of the surface layer is greater than

an X-ray diffraction peak intensity ratio of a (1 5 1) plane with respect to a (1 0 0) plane of a raw material powder of the surface layer or of ICDD data of a raw material.

3. The manufacturing apparatus of claim 2 , wherein the surface layer has a crystalline orientation greater than that of the raw material powder.

4. The manufacturing apparatus of claim 1 ,

wherein the particle that includes Y—O—F has an average diameter from about 10 nm to about 100 nm, and

wherein the surface layer has a porosity of equal to or less than about 2%.

5. The manufacturing apparatus of claim 1 ,

wherein the Y—O—F has a rhombohedral crystal structure that includes one of Y 5 O 4 F 7 , Y 1 O 0.826 F 1.348 , Y 6 O 5 F 8 , Y 7 O 6 F 9 , or Y 17 O 14 F 23 .

6. The manufacturing apparatus of claim 1 ,

wherein the base material structure includes one of a ceramic, a metal, a glass, or an organic compound.

Assignments (2)
CORRECTIVE ASSIGNMENT TO CORRECT THE LAST NAME OF 3RD INVENTOR WHICH WAS INCORRECTLY SPELLED AS KENICHI NAGAYAWA PREVIOUSLY RECORDED ON REEL 053905 FRAME 0949. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Oct 26, 2020
From: KIM, CHANGHWAN; IIZUKA, TOSHIHIRO; NAGAYAMA, KENICHI; NOGUCHI, TAKAFUMI
To: SAMSUNG ELECTRONICS CO, LTD.
Reel/Frame 054209/0677 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 28, 2020
From: KIM, CHANGHWAN; IIZUKA, TOSHIHIRO; NAGAYAWA, KENICHI; NOGUCHI, TAKAFUMI
To: SAMSUNG ELECTRONICS CO, LTD.
Reel/Frame 053905/0949 →
Priority Claims (2)
JP JP2019-187126 · Oct 10, 2019 · national
KR 10-2020-0052459 · Apr 29, 2020 · national
Continuity (1)
Related Publication 20210111044A1 · Apr 15, 2021
Cited By (1)
US 12,545,992