Granted Patent B2

US 12,545,992 · App. 18/134,296 · Granted Feb 10, 2026

Inventors: Inhwan Lee (Seoul, KR); Kangbin Bae (Seoul, KR)

Assignees: SAMSUNG ELECTRONICS CO., LTD.; Korea University Research and Business Foundation

C23C14/083C23C14/02C23C14/081C23C14/30H01L21/6833

Abstract

Claims (45)

1 . A plasma-resistant member comprising:

a lower layer disposed on a substrate and comprising yttrium oxide;

a buffer layer disposed on the lower layer; and

an upper layer disposed on the buffer layer and comprising yttrium oxyfluoride or fluorine-rich yttrium oxide,

wherein the buffer layer has a thermal expansion coefficient between a thermal expansion coefficient of the upper layer and a thermal expansion coefficient of the lower layer,

wherein the buffer layer comprises a first buffer layer adjacent to the lower layer and a second buffer layer disposed on the first buffer layer and adjacent to the upper layer, and wherein the second buffer layer has a thermal expansion coefficient greater than a thermal expansion coefficient of the first buffer layer, and

wherein:

(a) the first buffer layer comprises lanthanum zirconate, and the second buffer layer comprises yttria-stabilized zirconia,

(b) the first buffer layer comprises yttria-stabilized zirconia, and the second buffer layer comprises magnesium oxide, or

(c) the buffer layer further comprises a third buffer layer disposed between the first buffer layer and the second buffer layer, wherein the third buffer layer has a thermal expansion coefficient greater than the thermal expansion coefficient of the first buffer layer and smaller than the thermal expansion coefficient of the second buffer layer, and wherein the first buffer layer comprises lanthanum zirconate, the second buffer layer comprises magnesium oxide, and the third buffer layer comprises yttria-stabilized zirconia.

2 . The plasma-resistant member of claim 1 , wherein the lower layer, the buffer layer and the upper layer are formed through vapor deposition.

3 . The plasma-resistant member of claim 1 , wherein the thermal expansion coefficient of the buffer layer is 10×10 −6 ° C. −1 to 15×10 −6 ° C. −1 .

4 . The plasma-resistant member of claim 1 , wherein the first buffer layer comprises lanthanum zirconate, and the second buffer layer comprises yttria-stabilized zirconia.

5 . The plasma-resistant member of claim 1 , wherein the first buffer layer comprises yttria-stabilized zirconia, and the second buffer layer comprises magnesium oxide.

6 . The plasma-resistant member of claim 1 , wherein the buffer layer further comprises a third buffer layer disposed between the first buffer layer and the second buffer layer, wherein the third buffer layer has a thermal expansion coefficient greater than the thermal expansion coefficient of the first buffer layer and smaller than the thermal expansion coefficient of the second buffer layer, and wherein the first buffer layer comprises lanthanum zirconate, the second buffer layer comprises magnesium oxide, and the third buffer layer comprises yttria-stabilized zirconia.

7 . The plasma-resistant member of claim 1 , wherein each of the lower layer, the buffer layer and the upper layer has a thickness of 0.1 μm to 100 μm.

8 . A method for fabricating a plasma-resistant member, the method comprising:

depositing a lower layer comprising yttrium oxide on a substrate;

depositing a buffer layer on the lower layer; and

depositing an upper layer on the buffer layer, the upper layer comprising yttrium oxyfluoride or fluorine-rich yttrium oxide,

wherein the buffer layer has a thermal expansion coefficient between a thermal expansion coefficient of the upper layer and a thermal expansion coefficient of the lower layer,

wherein the buffer layer comprises a first buffer layer adjacent to the lower layer and a second buffer layer disposed on the first buffer layer and adjacent to the upper layer, and wherein the second buffer layer has a thermal expansion coefficient greater than a thermal expansion coefficient of the first buffer layer, and

wherein:

(a) the first buffer layer comprises lanthanum zirconate, and the second buffer layer comprises yttria-stabilized zirconia,

(b) the first buffer layer comprises yttria-stabilized zirconia, and the second buffer layer comprises magnesium oxide, or

(c) the buffer layer further comprises a third buffer layer disposed between the first buffer layer and the second buffer layer, wherein the third buffer layer has a thermal expansion coefficient greater than the thermal expansion coefficient of the first buffer layer and smaller than the thermal expansion coefficient of the second buffer layer, and wherein the first buffer layer comprises lanthanum zirconate, the second buffer layer comprises magnesium oxide, and the third buffer layer comprises yttria-stabilized zirconia.

9 . The method of claim 8 , wherein an evaporation source for the lower layer, the buffer layer and the upper layer is evaporated by electron beam.

10 . The method of claim 8 , wherein the first buffer layer comprises lanthanum zirconate, and the second buffer layer comprises yttria-stabilized zirconia.

11 . The method of claim 8 , wherein the first buffer layer comprises yttria-stabilized zirconia, and the second buffer layer comprises magnesium oxide.

12 . The method of claim 8 , wherein the buffer layer further comprises a third buffer layer disposed between the first buffer layer and the second buffer layer, wherein the third buffer layer has a thermal expansion coefficient greater than the thermal expansion coefficient of the first buffer layer and smaller than the thermal expansion coefficient of the second buffer layer, and wherein the first buffer layer comprises lanthanum zirconate, the second buffer layer comprises magnesium oxide, and the third buffer layer comprises yttria-stabilized zirconia.

13 . The method of claim 8 , wherein each of the lower layer, the buffer layer and the upper layer has a thickness of 0.1 μm to 100 μm.

14 . The method of claim 8 , wherein the method further comprises conducting the fabricating of the plasma-resistant member in an apparatus comprising a process chamber, wherein a degree of vacuum of the process chamber is 0.01 mTorr to 1 mTorr, a deposition rate is 10 nm/min to 200 nm/min, and oxygen gas is provided in the process chamber at a flow rate of 1 sccm to 1,000 sccm, when the lower layer, the buffer layer or the upper layer is deposited.

15 . A plasma-resistant member comprising:

a lower layer disposed on a substrate and comprising yttrium oxide;

a buffer layer disposed on the lower layer; and

an upper layer disposed on the buffer layer and comprising yttrium oxyfluoride or fluorine-rich yttrium oxide,

wherein the buffer layer has a thermal expansion coefficient between a thermal expansion coefficient of the upper layer and a thermal expansion coefficient of the lower layer,

wherein the buffer layer comprises a first buffer layer adjacent to the lower layer and a second buffer layer disposed on the first buffer layer and adjacent to the upper layer, and wherein the second buffer layer has a thermal expansion coefficient greater than a thermal expansion coefficient of the first buffer layer, and

wherein the buffer layer further comprises a third buffer layer disposed between the first buffer layer and the second buffer layer, and wherein the third buffer layer has a thermal expansion coefficient greater than the thermal expansion coefficient of the first buffer layer and smaller than the thermal expansion coefficient of the second buffer layer.

16 . A method for fabricating a plasma-resistant member, the method comprising:

depositing a lower layer comprising yttrium oxide on a substrate;

depositing a buffer layer on the lower layer; and

depositing an upper layer on the buffer layer, the upper layer comprising yttrium oxyfluoride or fluorine-rich yttrium oxide,

wherein the buffer layer has a thermal expansion coefficient between a thermal expansion coefficient of the upper layer and a thermal expansion coefficient of the lower layer,

wherein the plasma-resistant member is a plasma-resistant member of claim 15 .

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (27)