Ultrasonic inspection device
Provided is an ultrasonic inspection device for inspecting a packaged semiconductor device, The ultrasonic inspection device including an ultrasonic transducer that is disposed to face the semiconductor device; a medium holding unit that is provided at an end of the ultrasonic transducer facing the semiconductor device and holds a medium through which ultrasonic waves are propagated; a stage that moves the position of the semiconductor device relative to the ultrasonic transducer; and an analysis unit that analyzes the reaction of the semiconductor device in accordance with input of the ultrasonic waves from the ultrasonic transducer.
1. An ultrasonic inspection device for inspection of a packaged semiconductor device, comprising:
an ultrasonic transducer disposed to face the semiconductor device;
a medium holder configured to be provided at an end of the ultrasonic transducer facing the semiconductor device and hold a medium through which ultrasonic waves are propagated;
a stage configured to move the ultrasonic transducer and cause a position of the semiconductor device to shift relative to the ultrasonic transducer; and
an analyzer configured to analyze a reaction of the semiconductor device in accordance with an input of the ultrasonic waves from the ultrasonic transducer.
2. The ultrasonic inspection device according to claim 1 , wherein the medium holder is configured by a tubular member provided at the end of the ultrasonic transducer.
3. The ultrasonic inspection device according to claim 1 , wherein the medium holder is slidably fitted to the end of the ultrasonic transducer.
4. The ultrasonic inspection device according to claim 1 , wherein the medium holder has a medium flow port configured to adjust a holding amount of the medium.
5. The ultrasonic inspection device according to claim 1 , wherein the medium holder has a holding amount detection unit configured to detect a holding amount of the medium.
6. The ultrasonic inspection device according to claim 1 , further comprising:
a power supplier configured to apply a constant voltage or a constant current to the semiconductor device, and
a reaction detector configured to detect a current or a voltage of the semiconductor device in accordance with input of the ultrasonic waves in a state in which the constant voltage or the constant current is applied,
wherein the analyzer generates an analysis image on the basis of a detection signal from the reaction detector.
7. The ultrasonic inspection device according to claim 6 , further comprising a signal generation unit configured to input a driving signal to the ultrasonic transducer and output a reference signal corresponding to the driving signal,
wherein the analyzer generates the analysis image on the basis of the detection signal and the reference signal.
8. The ultrasonic inspection device according to claim 6 , further comprising a reflection detection unit configured to detect reflected waves of the ultrasonic waves reflected by the semiconductor device,
wherein the analyzer generates a reflection image on the basis of a detection signal from the reflection detection unit.
9. The ultrasonic inspection device according to claim 8 , wherein the analyzer generates a superimposed image in which the analysis image and the reflection image are superimposed.