Ultrasonic testing device and ultrasonic testing method
An ultrasonic testing device having a packaged semiconductor device as a testing target, the device including: an ultrasonic oscillator disposed to face the semiconductor device; a pulse generator generating a driving signal that is used in the generation of an ultrasonic wave to be output from the ultrasonic oscillator; and an analysis unit analyzing an output signal that is output from the semiconductor device in accordance with the irradiation of the ultrasonic wave from the ultrasonic oscillator, in which the pulse generator sets an optimal frequency of the driving signal such that the absorption of the ultrasonic wave in the semiconductor device is maximized.
1. An ultrasonic testing device having a packaged semiconductor device as a testing target, the device comprising:
an ultrasonic oscillator configured to be disposed to face the semiconductor device;
a signal generator configured to generate a driving signal that is used in generation of an ultrasonic wave to be output from the ultrasonic oscillator; and
an analyzer configured to analyze an output signal that is output from the semiconductor device in accordance with irradiation of the ultrasonic wave from the ultrasonic oscillator,
wherein the signal generator sets an optimal frequency of the driving signal such that absorption of the ultrasonic wave in the semiconductor device is maximized,
wherein the analyzer generates an analysis image by mapping an analysis result of the output signal in the tested region of the semiconductor device,
wherein the signal generator generates driving signals of a plurality of frequencies in a constant range including the optimal frequency, and
wherein the analyzer selects an analysis image having the highest SN ratio from a plurality of analysis images generated on the basis of the driving signals of the plurality of frequencies and outputs the analysis image to the outside.
2. The ultrasonic testing device according to claim 1 ,
wherein the signal generator sets the optimal frequency of the driving signal on the basis of a reflection frequency spectrum that is obtained by performing Fourier transformation with respect to an intensity time waveform of the ultrasonic wave reflected on a surface of the semiconductor device.
3. The ultrasonic testing device according to claim 2 ,
wherein the signal generator sets the optimal frequency of the driving signal on the basis of a ratio of the reflection frequency spectrum to an exit frequency spectrum that is obtained by performing Fourier transformation with respect to the intensity time waveform of the ultrasonic wave output from the ultrasonic oscillator.
4. The ultrasonic testing device according to claim 1 ,
wherein the signal generator sweeps the frequency of the driving signal and sets a frequency at which an intensity of the output signal to be output from the semiconductor device is highest in a sweep range as the optimal frequency of the driving signal.
5. The ultrasonic testing device according to claim 1 ,
wherein the signal generator generates the driving signal on the basis of mapping information indicating an optimal frequency for each position of a tested region of the semiconductor device.
6. An ultrasonic testing method having a packaged semiconductor device as a testing target, the method comprising:
irradiating the semiconductor device with an ultrasonic wave from an ultrasonic oscillator; and
analyzing an output signal that is output from the semiconductor device in accordance with the irradiation of the ultrasonic wave from the ultrasonic oscillator,
wherein in the irradiation, an optimal frequency of a driving signal for driving the ultrasonic oscillator is set such that absorption of the ultrasonic wave in the semiconductor device is maximized,
wherein in the analyzing, an analysis image is generated by mapping an analysis result of the output signal in the tested region of the semiconductor device,
wherein in the irradiation, driving signals of a plurality of frequencies are generated in a constant range including the optimal frequency, and
wherein in the analyzing, an analysis image having the highest SN ratio is selected from a plurality of analysis images generated on the basis of the driving signals of the plurality of frequencies and is output to the outside.
7. The ultrasonic testing method according to claim 6 ,
wherein in the irradiation, the optimal frequency of the driving signal is set on the basis of a reflection frequency spectrum that is obtained by performing Fourier transformation with respect to an intensity time waveform of the ultrasonic wave reflected on a surface of the semiconductor device.
8. The ultrasonic testing method according to claim 7 ,
wherein in the irradiation, the optimal frequency of the driving signal is set on the basis of a ratio of the reflection frequency spectrum to an exit frequency spectrum that is obtained by performing Fourier transformation with respect to the intensity time waveform of the ultrasonic wave output from the ultrasonic oscillator.
9. The ultrasonic testing method according to claim 6 ,
wherein in the irradiation, the frequency of the driving signal is swept, and a frequency at which an intensity of the output signal to be output from the semiconductor device is highest in a sweep range is set as the optimal frequency of the driving signal.
10. The ultrasonic testing method according to claim 6 ,
wherein in the irradiation, the driving signal is generated on the basis of mapping information indicating an optimal frequency for each position of a tested region of the semiconductor device.