Semiconductor device inspection apparatus and semiconductor device inspection method
A semiconductor device inspection apparatus is an apparatus for inspecting a semiconductor device which is an object to be inspected based on a result signal which is output in accordance with input of a test pattern signal to the semiconductor device, the apparatus including: an ultrasonic transducer, disposed to face the semiconductor device, which generates ultrasonic waves; a stage for moving a relative position of the semiconductor device and the ultrasonic transducer; a stimulation condition control unit for controlling a condition of stimulation by the ultrasonic waves applied to the semiconductor device; and an analysis unit for generating a measurement image based on the result signal which is output from the semiconductor device.
1. An apparatus for inspecting a semiconductor device which is an object to be inspected based on a result signal which is output in accordance with input of a test pattern signal to the semiconductor device, the apparatus comprising:
an ultrasonic transducer, disposed to face the semiconductor device, which generates ultrasonic waves;
a stage configured to move a relative position of the semiconductor device and the ultrasonic transducer;
a stimulation condition controller configured to control a condition of stimulation by the ultrasonic waves applied to the semiconductor device; and
an analyzer configured to generate a measurement image based on the result signal indicating pass/fail information generated in accordance with a test signal which is output from the semiconductor device in which the test pattern signal is input.
2. The inspection apparatus according to claim 1 ,
wherein the stimulation condition controller includes a signal generator configured to output a driving signal for driving the ultrasonic transducer to the ultrasonic transducer.
3. The apparatus according to claim 2 ,
wherein the signal generator controls at least one of a frequency, the number of pulses, a pulse interval, and a pulse intensity of the ultrasonic waves by controlling the driving signal.
4. The apparatus according to claim 1 ,
wherein the stimulation condition controller includes a stage controller configured to control movement of the stage.
5. The apparatus according to claim 4 ,
wherein the stage controller controls at least one of a movement speed, a movement interval, and a movement distance of the stage.
6. The apparatus according to claim 1 , further comprising a reflected wave detector configured to detect reflected waves of the ultrasonic waves reflected from the semiconductor device,
wherein the analyzer generates a reflection image based on a detection signal from the reflected wave detector.
7. The apparatus according to claim 6 ,
wherein the analyzer generates a superimposed image having the measurement image and the reflection image superimposed on each other.
8. The apparatus according to claim 1 ,
wherein the ultrasonic transducer includes an array transducer.
9. A method for inspecting a semiconductor device which is an object to be inspected, the method comprising:
inputting a test pattern signal to the semiconductor device;
controlling a condition of stimulation by an ultrasonic waves applied to the semiconductor device;
generating the ultrasonic waves based on the condition and scanning the semiconductor device with the ultrasonic waves; and
generating a measurement image based on a result signal indicating pass/fail information generated in accordance with a test signal which is output from the semiconductor device in accordance with input of the test pattern signal.
10. The method according to claim 9 ,
wherein the controlling includes generating a driving signal for driving and controlling an ultrasonic transducer that generates the ultrasonic waves.
11. The method according to claim 10 ,
wherein the generating the driving signal includes controlling at least one of a frequency, the number of pulses, a pulse interval, and a pulse intensity of the ultrasonic waves by controlling the driving signal.
12. The method according to claim 9 ,
wherein the controlling the condition of stimulation by the ultrasonic waves includes a controlling movement of a position of irradiation of the semiconductor device with the ultrasonic waves.
13. The method according to claim 12 ,
wherein the controlling the movement includes controlling at least one of a movement speed, a movement interval, and a movement distance of the position of irradiation of the semiconductor device with the ultrasonic waves.
14. The method according to claim 9 , further comprising a detecting reflected waves of the ultrasonic waves reflected from the semiconductor device to generate a detection signal, and generating a reflection image based on the detection signal.
15. The method according to claim 14 , further comprising generating a superimposed image having the measurement image and the reflection image superimposed on each other.