Methods and apparatus for enhancing selectivity of titanium and titanium silicides during chemical vapor deposition
Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl 4 ), hydrogen (H 2 ) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees Celsius; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.
1. A method of selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface, comprising:
forming a remote plasma reaction between titanium tetrachloride (TiCl 4 ), hydrogen (H 2 ) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees Celsius; and
flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.
2. The method of claim 1 , wherein the substrate comprises a high aspect ratio feature, wherein the silicon surface is disposed at a bottom of the high aspect ratio feature and the dielectric surface is disposed on one or more sidewalls of the high aspect ratio feature.
3. The method of claim 1 , wherein the first temperature is about 550 degrees Celsius.
4. The method of claim 1 , wherein about 65 watts of RF energy is applied to the remote plasma reaction.
5. The method of claim 1 , wherein the titanium material layer is deposited to a predetermined thickness.
6. The method of claim 1 , wherein the titanium material layer comprises titanium, titanium silicide or substantially pure titanium.
7. The method of claim 1 , further comprising adding silane, disilane, hydrogen, and argon to the showerhead to contact the remote plasma reaction.
8. The method of claim 7 , wherein the titanium material layer comprises titanium silicide.
9. The method of claim 1 , further comprises forming a direct plasma reaction between nitrogen (N 2 ), hydrogen (H 2 ) and argon (Ar) a temperature of 200 to 800 degrees Celsius inside a process chamber between the showerhead and the substrate to form a titanium nitride capping layer upon the titanium material layer atop the silicon surface of the substrate.
10. The method of claim 1 , wherein the dielectric surface comprises silicon oxide or silicon nitride.
11. The method of claim 1 , further comprising prior to selectively forming a titanium material layer upon the silicon surface of the substrate: preheating the substrate to a temperature of 200 to 800 degrees Celsius and contacting the substrate and dielectric surface with argon, hydrogen, silane, and combinations thereof.
12. The method of claim 1 , further comprising subsequent to flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate: post-treating the titanium material layer at a temperature greater than 200 degrees Celsius.
13. The method of claim 12 , wherein the titanium material layer comprises or consists of titanium and post-treating further comprises contacting the titanium with silane and one or more of hydrogen or hydrogen radicals.
14. The method of claim 12 , wherein the titanium material layer comprises or consists of titanium silicide and the post-treating comprises contacting the titanium silicide with one or more of hydrogen or hydrogen radicals.
15. A method of depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface, comprising:
optionally, forming a first direct plasma reaction between titanium tetrachloride (TiCl 4 ), hydrogen (H 2 ) and argon (Ar) inside a process chamber between a showerhead and the substrate for a duration of 0.1 to 200 seconds to deposit a layer of titanium material on the silicon surface of the substrate;
forming a remote plasma reaction between titanium tetrachloride (TiCl 4 ), hydrogen (H 2 ) and argon (Ar) within the process chamber between a lid heater and a showerhead of a process chamber to form a titanium material layer upon the substrate inside the processing chamber to selectively deposit the titanium material layer atop the silicon surface of the substrate or the optionally formed layer of titanium material on the silicon surface, wherein the dielectric surface inhibits deposition of the titanium material layer atop the dielectric surface, and wherein the remote plasma reaction reacts titanium tetrachloride (TiCl 4 ), hydrogen (H 2 ) and argon (Ar) at a first temperature of 200 to 800 degrees Celsius; and
subsequently forming a direct plasma reaction between nitrogen (N 2 ), hydrogen (H 2 ) and argon (Ar) inside the process chamber between the showerhead and the substrate to form a titanium nitride layer upon the titanium material layer atop the silicon surface of the substrate.
16. The method of claim 15 , wherein forming the remote plasma reaction between titanium tetrachloride (TiCl 4 ), hydrogen (H 2 ) and argon (Ar) within a process chamber between the lid heater and the showerhead further comprises adding silane, hydrogen, and argon to the showerhead to contact the remote plasma reaction.
17. The method of claim 15 , wherein the silicon surface is at a bottom of a feature, and wherein the method further comprises filling the feature atop the titanium nitride layer from the bottom to a top of the feature with cobalt or tungsten.
18. The method of claim 15 , further comprising prior to subsequently forming the direct plasma: post-treating the titanium material layer at a temperature greater than 200 degrees Celsius.