Semiconductor device
A semiconductor device that allows easy hole extraction is provided. The semiconductor device includes: a semiconductor substrate having drift and base regions; a transistor portion formed in the semiconductor substrate; and a diode portion formed adjacent to the transistor portion and in the semiconductor substrate. In the transistor portion and the diode portion: a plurality of trench portions each arrayed along a predetermined array direction; and a plurality of mesa portions formed between respective trench portions are formed, among the plurality of mesa portions, at least one boundary mesa portion at a boundary between the transistor portion and the diode portion includes a contact region at an upper surface of the semiconductor substrate and having a concentration higher than that of the base region, and an area of the contact region at the boundary mesa portion is greater than an area of the contact region at another mesa portion.
1. A semiconductor device comprising:
a semiconductor substrate having a first conductivity type drift region and a second conductivity type base region provided above the drift region;
a transistor portion formed in the semiconductor substrate; and
a diode portion formed adjacent to the transistor portion and in the semiconductor substrate, wherein
in the transistor portion and the diode portion:
a plurality of trench portions each arrayed along a predetermined array direction; and
a plurality of mesa portions formed between respective trench portions are formed,
among the plurality of mesa portions, at least one boundary mesa portion at a boundary between the transistor portion and the diode portion includes a second conductivity type contact region that is at an upper surface of the semiconductor substrate and has a concentration higher than that of the base region,
an area of the contact region at the boundary mesa portion is greater than an area of the contact region at another mesa portion,
among the plurality of trench portions, at least one trench portion provided adjacent to a trench portion adjacent to the boundary mesa portion and on the transistor portion side relative to the trench portion adjacent to the boundary mesa portion is a dummy trench portion,
the transistor portion and the diode portion further have:
a second conductivity type collector region provided at least below the outermost contact region in a longitudinal direction different from the array direction, and
the transistor portion further has:
a first conductivity type accumulation region that is provided between the base region and the drift region and has a concentration higher than that of the drift region, and
an inner end portion of the collector region of the diode portion is positioned at an inner position relative to an outer end portion of the accumulation region of the transistor portion.
2. The semiconductor device according to claim 1 , wherein
the transistor portion further has a first conductivity type emitter region having a concentration higher than that of the drift region, and
an inner end portion of the collector region of the diode portion is positioned at an inner position relative to an outer end portion of the outermost emitter region in the longitudinal direction in the transistor portion.
3. The semiconductor device according to claim 1 , wherein
the diode portion has a lifetime killer on an upper surface side of the semiconductor substrate, and
in a region where a first accumulation region is formed, the transistor portion does not have the lifetime killer on the upper surface side of the semiconductor substrate.
4. The semiconductor device according to claim 1 , wherein the boundary mesa portion has a lifetime killer on the upper surface side of the semiconductor substrate.
5. A semiconductor device comprising:
a semiconductor substrate having a first conductivity type drift region and a second conductivity type base region provided above the drift region;
a plurality of trench portions that are formed at an upper surface of the semiconductor substrate arrayed parallel to one another, each of the plurality of trench portions penetrating the base region;
a first conductivity type emitter region having a concentration higher than that of the drift region and a second conductivity type contact region having a concentration higher than that of the base region that are formed in a region adjacent to the trench portion at the upper surface of the semiconductor substrate and alternately along a longitudinal direction of the plurality of trench portions; and
a first conductivity type accumulation region that is formed between the base region and the drift region and has a concentration higher than that of the drift region, wherein
the drift region does not extend above the accumulation region, and
in the longitudinal direction of the plurality of trench portions, the accumulation region is formed to extend beyond an end portion of the emitter region,
the semiconductor device further has:
a transistor portion formed in the semiconductor substrate; and
a diode portion formed adjacent to the transistor portion and in the semiconductor substrate,
the transistor portion and the diode portion further have:
a second conductivity type collector region provided at least below the outermost contact region in the longitudinal direction; and
an inner end portion of the collector region of the diode portion is positioned at an inner position relative to an outer end portion of the accumulation region of the transistor portion.
6. The semiconductor device according to claim 5 , wherein an inner end portion of the collector region of the diode portion is positioned at an inner position relative to an outer end portion of the outermost emitter region in the longitudinal direction in the transistor portion.
7. The semiconductor device according to claim 5 , wherein at least a partial region below the emitter region has a carrier passage region where the accumulation region is not formed.
8. The semiconductor device according to claim 7 , wherein an entire region below the emitter region is provided with the carrier passage region.
9. The semiconductor device according to claim 8 , wherein the carrier passage region is also provided below an end portion that is part of the contact region and adjacent to the emitter.
10. The semiconductor device according to claim 5 , wherein
the accumulation region has:
a first accumulation region formed at a predetermined depth position; and
a second accumulation region formed closer to the emitter region than the first accumulation region is and at a position shallower than the first accumulation region is, and
both the first accumulation region and the second accumulation region are formed below the contact region.
11. The semiconductor device according to claim 5 , further comprising an interlayer dielectric film formed at the upper surface of the semiconductor substrate, wherein
in the interlayer dielectric film, a contact hole to expose the emitter region and the contact region are formed, and
in the longitudinal direction, the accumulation region is formed to reach an outer position relative to an end portion of the contact hole.