Imaging device, operating method thereof, and electronic device
An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.
1. An imaging device comprising:
a first photoelectric conversion element;
a second photoelectric conversion element;
a first transistor;
a second transistor;
a third transistor; and
a fourth transistor,
wherein an anode of the first photoelectric conversion element is directly connected to an anode of the second photoelectric conversion element,
wherein a cathode of the second photoelectric conversion element is directly connected to a power supply line,
wherein one of a source and a drain of the first transistor is electrically connected to a cathode of the first photoelectric conversion element,
wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor and a gate of the third transistor, and
wherein one of a source and a drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor.
2. The imaging device according to claim 1 ,
wherein at least one of the first transistor, the second transistor, and the third transistor comprises an oxide semiconductor in an active layer.
3. The imaging device according to claim 1 ,
wherein the first transistor, the second transistor, and the third transistor each comprises an oxide semiconductor in an active layer, and
wherein the oxide semiconductor comprises indium and zinc.
4. The imaging device according to claim 3 ,
wherein the oxide semiconductor comprises M, where M is Al, Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf.
5. The imaging device according to claim 1 , further comprising a capacitor,
wherein one terminal of the capacitor is electrically connected to the other of the source and the drain of the first transistor.
6. An imaging device comprising:
a first photoelectric conversion element;
a second photoelectric conversion element;
a first transistor;
a second transistor;
a third transistor; and
a fourth transistor;
wherein a cathode of the first photoelectric conversion element is directly connected to a cathode of the second photoelectric conversion element,
wherein an anode of the second photoelectric conversion element is directly connected to a power supply line,
wherein one of a source and a drain of the first transistor is electrically connected to an anode of the first photoelectric conversion element,
wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor and a gate of the third transistor, and
wherein one of a source and a drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor.
7. The imaging device according to claim 6 ,
wherein at least one of the first transistor, the second transistor, and the third transistor comprises an oxide semiconductor in an active layer.
8. The imaging device according to claim 6 ,
wherein the first transistor, the second transistor, and the third transistor each comprises an oxide semiconductor in an active layer, and
wherein the oxide semiconductor comprises indium and zinc.
9. The imaging device according to claim 8 ,
wherein the oxide semiconductor comprises M, where M is Al, Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf.
10. The imaging device according to claim 6 , further comprising a capacitor,
wherein one terminal of the capacitor is electrically connected to the other of the source and the drain of the first transistor.
11. The imaging device according to claim 1 ,
wherein the other of the source and the drain of the first transistor is directly connected to the one of the source and the drain of the second transistor and the gate of the third transistor.
12. The imaging device according to claim 6 ,
wherein the other of the source and the drain of the first transistor is directly connected to the one of the source and the drain of the second transistor and the gate of the third transistor.