Dinuclear molybdenum precursors for deposition of molybdenum-containing films
Dinuclear molybdenum coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a dinuclear molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.
1. A metal coordination complex having a structure of Formula (I), Formula (II), Formula (III), or Formula (IV):
wherein Mo—Mo is dinuclear molybdenum,
L is independently
is independently
and R is independently a substituted or unsubstituted C 1 -C 10 alkyl group, and
one or more of L 1 and L 2 are independently a sterically or electronically adapted phosphine ligand or a carbonyl ligand.
2. The metal coordination complex of claim 1 , wherein R is independently selected from Me-, Et-, iPr-, tBu-, and
substituents.
3. A method of depositing a film, the method comprising:
exposing a substrate to a dinuclear molybdenum coordination complex having a structure of Formula (I), Formula (II), Formula (III), or Formula (IV)
wherein Mo—Mo is dinuclear molybdenum,
L is independently
is independently
and R is independently a substituted or unsubstituted C 1 -C 10 alkyl group, and
one or more of L 1 and L 2 are independently a sterically or electronically adapted phosphine ligand or a carbonyl ligand; and
exposing the substrate to a reactant to form a molybdenum-containing film on the substrate.
4. The method of claim 3 , wherein R is independently selected from Me-, Et-, iPr-, tBu-, and
5. The method of claim 3 , wherein the method is one or more of chemical vapor deposition or atomic layer deposition.
6. The method of claim 3 , wherein the reactant is reacted with the film at a temperature in a range of from 100° C. to <400° C.
7. The method of claim 3 , wherein the reactant comprises one or more of an oxidizing agent and a reducing agent.
8. The method of claim 3 , wherein the molybdenum-containing film comprises one or more of a molybdenum metal (elemental Mo) film, a molybdenum oxide film, a molybdenum carbide film, a molybdenum silicide film, and a molybdenum nitride film.
9. The method of claim 3 , wherein the substrate is exposed to the dinuclear molybdenum coordination complex and the reactant sequentially.
10. The method of claim 3 , wherein the substrate is exposed to the dinuclear molybdenum coordination complex and the reactant simultaneously.
11. The method of claim 3 , further comprising purging the substrate of the dinuclear molybdenum coordination complex prior to exposing the substrate to the reactant.
12. The method of claim 11 , wherein purging comprises one or more of applying a vacuum or flowing a purge gas over the substrate.
13. The method of claim 12 , wherein the purge gas comprises one or more of nitrogen (N 2 ), helium (He), and argon (Ar).
14. The method of claim 3 , further comprising repeating the method to provide a molybdenum-containing film having a thickness of about 0.3 to about 100 nm.
15. A method of depositing a film, the method comprising:
forming a molybdenum-containing film in a process cycle comprising sequential exposure of a substrate to a dinuclear molybdenum coordination complex precursor, purge gas, reactant, and purge gas,
wherein the dinuclear molybdenum coordination complex precursor has a structure of Formula (I), Formula (II), Formula (III), or Formula (IV):
wherein Mo—Mo is dinuclear molybdenum,
L is independently
is independently
and R is independently a substituted or unsubstituted C 1 -C 10 alkyl group, and
one or more of L 1 and L 2 are independently a sterically or electronically adapted phosphine ligand or a carbonyl ligand.
16. The method claim 15 , wherein R is independently selected from Me-, Et-, iPr-, tBu-, and