Granted Patent B2

US 12,516,077 · App. 17/747,044 · Granted Jan 6, 2026

Inventors: Andrea Leoncini (Singapore, SG); Paul Mehlmann (Singapore, SG); Nemanja Dordevic (Singapore, SG); Han Vinh Huynh (Singapore, SG); Doreen Wei Ying Yong (Singapore, SG)

Assignees: Applied Materials, Inc.; National University of Singapore

C07F11/00C23C16/18C23C16/45534C23C16/45553

Abstract

Claims (33)

1 . A dinuclear molybdenum coordination complex having a structure of Formula (I), Formula (II), Formula (III), or Formula (IV):

wherein Mo-Mo is dinuclear molybdenum,

L and

are independently a sterically or electronically adapted phosphine ligand, and

one or more of L 1 and L 2 are independently the sterically or electronically adapted phosphine ligand, or a carbonyl ligand.

2 . The metal coordination complex of claim 1 , wherein L is independently

is independently

and R is independently a substituted or unsubstituted C 1 -C 10 alkyl group.

3 . The metal coordination complex of claim 2 , wherein R is independently selected from Me-, Et-, iPr-, tBu-, and

substituents.

4 . A method of depositing a film, the method comprising:

exposing a substrate to the dinuclear molybdenum coordination complex of claim 1 ; and

exposing the substrate to a reactant to form a molybdenum-containing film on the substrate.

5 . The method of claim 4 , wherein L is independently

is independently

R is independently a substituted or unsubstituted C 1 -C 10 alkyl group.

6 . The method of claim 5 , wherein R is independently selected from Me-, Et-, iPr-, tBu-, and

7 . The method of claim 4 , wherein the method is one or more of chemical vapor deposition or atomic layer deposition.

8 . The method of claim 4 , wherein the reactant is reacted with the film at a temperature in a range of from 100° C. to 400° C.

9 . The method of claim 4 , wherein the reactant comprises one or more of an oxidizing agent and a reducing agent.

10 . The method of claim 4 , wherein the molybdenum-containing film comprises one or more of a molybdenum metal (elemental Mo) film, a molybdenum oxide film, a molybdenum carbide film, a molybdenum silicide film, and a molybdenum nitride film.

11 . The method of claim 4 , wherein the substrate is exposed to the dinuclear molybdenum coordination complex and the reactant sequentially.

12 . The method of claim 4 , wherein the substrate is exposed to the dinuclear molybdenum coordination complex and the reactant simultaneously.

13 . The method of claim 4 , further comprising purging the substrate of the dinuclear molybdenum coordination complex prior to exposing the substrate to the reactant.

14 . The method of claim 13 , wherein purging comprises one or more of applying a vacuum or flowing a purge gas over the substrate.

15 . The method of claim 4 , further comprising repeating the method to provide a molybdenum-containing film having a thickness of 0.3 nm to 100 nm.

16 . The method of claim 14 , wherein the purge gas comprises one or more of nitrogen, helium, and argon.

17 . A method of depositing a film, the method comprising:

forming a molybdenum-containing film in a process cycle comprising sequential exposure of a substrate to the dinuclear molybdenum coordination complex of claim 1 , purge gas, reactant, and purge gas.

18 . The method claim 17 , wherein L is independently

is independently

and R is independently a substituted or unsubstituted C 1 -C 10 alkyl group.

19 . The method of claim 18 , wherein R is independently selected from Me-, Et-, iPr-, tBu-, and

Assignments (2)

Continuity (2)

References Cited (76)