Molybdenum silylcyclopentadienyl and silylallyl complexes and use thereof in thin film deposition
Molybdenum complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The molybdenum complexes correspond in structure to Formula (I): wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 , and R 10 are independently selected from the group consisting of hydrogen, alkyl, and trialkylsilyl; and at least one of R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 , and R 10 is trialkylsilyl.
1. An organometallic complex corresponding in structure to Formula I:
wherein
R 1 is selected from the group consisting of trimethylsilyl, triethylsilyl, and tert-butyldimethylsilyl;
R 2 , R 3 , R 4 , and R 5 are hydrogen;
R 6 , R 7 , R 8 , R 9 , and R 10 are independently selected from the group consisting of hydrogen, C 1 -C 8 -alkyl, and tri(C 1 -C 8 -alkyl)silyl; and
at least one of R 6 , R 7 , R 8 , R 9 , and R 10 is selected from the group consisting of trimethylsilyl, triethylsilyl, and tert-butyldimethylsilyl.
2. The organometallic complex of claim 1 , wherein R 6 , R 7 , R 8 , R 9 , and R 10 are independently selected from the group consisting of hydrogen, methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, trimethylsilyl, triethylsilyl, triisopropylsilyl, and tert-butyldimethylsilyl.
3. The organometallic complex of claim 1 , wherein R 1 is trimethylsilyl.
4. The organometallic complex of claim 1 , wherein R 1 is trimethylsilyl;
R 6 , R 7 , R 9 , and R 10 are hydrogen; and
R 8 is selected from the group consisting of triethylsilyl, tert-butyldimethylsilyl, and trimethylsilyl.
5. The organometallic complex of claim 1 , wherein
R 1 is trimethylsilyl;
R 6 , R 7 , R 8 , and R 9 are hydrogen; and
R 10 is selected from the group consisting of triethylsilyl, tert-butyldimethylsilyl, and trimethylsilyl.
6. The organometallic complex of claim 5 , wherein the complex is
7. A method for forming a molybdenum-containing film by a vapor deposition process, the method comprising vaporizing an organometallic complex corresponding in structure to Formula I:
wherein
R 1 is selected from the group consisting of trimethylsilyl, triethylsilyl, and tert-butyldimethylsilyl;
R 2 , R 3 , R 4 , and R 5 are hydrogen;
R 6 , R 7 , R 8 , R 9 , and R 10 are independently selected from the group consisting of hydrogen, C 1 -C 8 -alkyl, and tri(C 1 -C 8 -alkyl)silyl; and
at least one of R 6 , R 7 , R 8 , R 9 , and R 10 is selected from the group consisting of trimethylsilyl, triethylsilyl, and tert-butyldimethylsilyl.
8. The method of claim 7 , wherein R 6 , R 7 , R 8 , R 9 , and R 10 are independently selected from the group consisting of hydrogen, methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, trimethylsilyl, triethylsilyl, triisopropylsilyl, and tert-butyldimethylsilyl.
9. The method of claim 7 , wherein R 1 is trimethylsilyl.
10. The method of claim 7 , wherein
R 1 is trimethylsilyl;
R 6 , R 7 , R 9 , and R 10 are hydrogen; and
R 8 is selected from the group consisting of triethylsilyl, tert-butyldimethylsilyl, and trimethylsilyl.
11. The method of claim 7 , wherein
R 1 is trimethylsilyl;
R 6 , R 7 , R 8 , and R 9 are hydrogen; and
R 10 is selected from the group consisting of triethylsilyl, tert-butyldimethylsilyl, and trimethylsilyl.
12. The method of claim 11 , wherein the complex is
13. The method of claim 7 , wherein the vapor deposition process is chemical vapor deposition.
14. The method of claim 13 , wherein the chemical vapor deposition is pulsed chemical vapor deposition, continuous flow chemical vapor deposition, or liquid injection chemical vapor deposition.
15. The method of claim 7 , wherein the vapor deposition process is atomic layer deposition.
16. The method of claim 15 , wherein the atomic layer deposition is liquid injection atomic layer deposition or plasma-enhanced atomic layer deposition.
17. The method of claim 7 , wherein the at least one organometallic complex is delivered to a substrate in pulses alternating with pulses of an oxygen source to form a metal oxide film, wherein the oxygen source is selected from the group consisting of H 2 O, air, O 2 , and ozone.
18. The method of claim 7 , further comprising vaporizing at least one co-organometallic complex to form a metal oxide film.
19. The method of claim 18 , further comprising vaporizing at least one co-reactant selected from the group consisting of hydrogen, hydrogen plasma, oxygen, air, water, ammonia, a hydrazine, a borane, a silane, ozone and a combination of any two or more thereof.
20. The method of claim 19 , further comprising vaporizing a hydrazine as a co-reactant, wherein the hydrazine is hydrazine (N 2 H 4 ) or N,N-dimethylhydrazine.
21. The method of claim 7 , wherein the method is used for a DRAM or CMOS application.