IP Library › Granted Patent US 12,479,872
Granted Patent B2
US 12,479,872 · App. 17/841,963 · Granted Nov 25, 2025

Molybdenum(IV) and molybdenum(III) precursors for deposition of molybdenum films

Inventors: Andrea Leoncini (Singapore, SG); Paul Mehlmann (Singapore, SG); Nemanja Dordevic (Singapore, SG); Han Vinh Huynh (Singapore, SG); Doreen Wei Ying Yong (Singapore, SG)
Assignees: Applied Materials, Inc.; National University of Singapore
C07F11/00C23C16/18C23C16/45534C23C16/45553
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Quick Facts
Patent No.
US 12,479,872
App. No.
17/841,963
Granted
Nov 25, 2025
Kind
B2
Abstract

Molybdenum(IV) and molybdenum(III) coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

Claims (23)

1. A method of depositing a film, the method comprising:

exposing a substrate to a molybdenum(IV) precursor or a molybdenum(III) precursor having a structure of Formula (I):

wherein L is independently selected from the group consisting of pyrazolo, pyrazolato, guanidino, and iminato; and

exposing the substrate to a reactant to form a molybdenum-containing film on the substrate.

2. The method of claim 1 , wherein the molybdenum-containing film comprises less than 5% of halogen and carbonyl on an atomic basis.

3. The method of claim 1 , wherein L is independently selected from the group consisting of

and R is an unsubstituted or substituted C 1 -C 10 alkyl group.

4. The method of claim 1 , wherein the structure of Formula (I) is selected from the group consisting of

5. The method of claim 1 , wherein the reactant comprises one or more of an oxidizing agent and a reducing agent.

6. The method of claim 1 , wherein the molybdenum film comprises one or more of a molybdenum metal (elemental Mo) film, a molybdenum oxide film, a molybdenum carbide film, a molybdenum silicide film, and a molybdenum nitride film.

7. The method of claim 1 , wherein the substrate is exposed to the molybdenum(IV) precursor or the molybdenum(III) precursor and the reactant sequentially.

8. The method of claim 1 , wherein the substrate is exposed to the molybdenum(IV) precursor or the molybdenum(III) precursor and the reactant simultaneously.

9. The method of claim 1 , further comprising purging the substrate of the molybdenum(IV) precursor or the molybdenum(III) precursor prior to exposing the substrate to the reactant.

10. The method of claim 9 , wherein purging comprises one or more of applying a vacuum or flowing a purge gas over the substrate.

11. The method of claim 10 , wherein the purge gas comprises one or more of nitrogen (N 2 ), helium (He), and argon (Ar).

12. The method of claim 1 , further comprising repeating the method to provide a molybdenum-containing film having a thickness of about 0.3 to about 100 nm.

13. A method of depositing a film, the method comprising:

forming a molybdenum-containing film in a process cycle comprising sequential exposure of a substrate to a molybdenum(IV) precursor or a molybdenum(III) precursor, purge gas, reactant, and purge gas, the molybdenum(IV) precursor or the molybdenum(III) precursor having a structure of Formula (I):

wherein L is independently selected from the group consisting of pyrazolo, pyrazolato, guanidino, and iminato.

14. The method of claim 13 , wherein the molybdenum-containing film comprises less than 5% of halogen and carbonyl on an atomic basis.

15. The method of claim 13 , wherein L is independently selected from the group consisting of

and R is an unsubstituted or substituted C 1 -C 10 alkyl group.

16. The method of claim 13 , wherein the structure of Formula (I) is selected from the group consisting of

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 16, 2022
From: YONG, DOREEN WEI YING
To: APPLIED MATERIALS, INC.
Reel/Frame 060226/0556 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 16, 2022
From: LEONCINI, ANDREA; MEHLMANN, PAUL; DORDEVIC, NEMANJA; HUYNH, HAN VINH
To: NATIONAL UNIVERSITY OF SINGAPORE
Reel/Frame 060226/0599 →
Continuity (2)
Division 17146683 · Jan 12, 2021
Related Publication 20220306662A1 · Sep 29, 2022
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