Method of selectively forming metal silicides for semiconductor devices
A substrate processing method includes providing a substrate containing a first semiconductor material and a second semiconductor material, treating the first semiconductor material and the second semiconductor material with a chemical source that selectively forms a chemical layer on the second semiconductor material relative to the first semiconductor material, and exposing the substrate to a first metal-containing precursor that selectively deposits a first metal-containing layer on the first semiconductor material relative to the chemical layer on the second semiconductor material. The method can further include annealing the substrate to react the first metal-containing layer with the first semiconductor material to form a first metal silicide layer, removing the chemical layer from the second semiconductor material, depositing a second metal-containing layer on the second semiconductor material, and annealing the substrate to react the second metal-containing layer with the second semiconductor material to form a second metal silicide layer.
1. A substrate processing method, comprising:
providing a substrate containing a first semiconductor material that includes germanium (Ge) and a second semiconductor material that includes doped silicon (Si);
treating the first semiconductor material and the second semiconductor material with an oxidation source that includes a plasma-excited process gas containing H 2 and O 2 , wherein the oxidation source selectively reacts with the second semiconductor material to form an oxide layer on the second semiconductor material relative to the first semiconductor material;
exposing the substrate to a first metal-containing precursor that selectively deposits a first metal-containing layer on the first semiconductor material relative to the oxide layer on the second semiconductor material, wherein the first metal-containing layer contains ruthenium (Ru) metal, platinum (Pt) metal, cobalt (Co) metal, nickel (Ni) metal, palladium (Pd) metal, molybdenum (Mo) metal, tungsten (W) metal, vanadium (V) metal, or a combination thereof.
2. The method of claim 1 , further comprising annealing the substrate to react the first metal-containing layer with the first semiconductor material.
3. The method of claim 2 , following the annealing, removing any remaining unreacted portion of the first metal-containing layer from the substrate.
4. The method of claim 2 , further comprising:
removing the oxide layer from the second semiconductor material.
5. The method of claim 4 , further comprising:
following the removing, depositing a second metal-containing layer on the second semiconductor material.
6. The method of claim 5 , further comprising:
annealing the substrate to react the second metal-containing layer with the second semiconductor material.
7. The method of claim 5 , wherein the second metal-containing layer includes titanium (Ti) metal, nickel (Ni) metal, a NiPt alloy, cobalt (Co) metal, molybdenum (Mo) metal, tungsten (W) metal, vanadium (V) metal, or a combination thereof.
8. The method of claim 1 , wherein the first semiconductor material includes doped SiGe or doped Ge and the second semiconductor material includes doped Si.
9. The method of claim 1 , wherein the substrate includes a positive-channel field emission transistor (PFET) contact region that contains the first semiconductor material and a negative-channel field emission transistor (NFET) contact region that includes the second semiconductor material.
10. A substrate processing method, comprising:
providing a substrate containing a first semiconductor material that includes germanium (Ge) and a second semiconductor material that includes doped Si;
treating the substrate with an oxidation source that includes a plasma-excited process gas containing H 2 and O 2 , wherein the oxidation source that selectively reacts with the first semiconductor material to forms an oxide layer on the second semiconductor material relative to the first semiconductor material;
exposing the substrate to a first metal-containing precursor that selectively deposits a first metal-containing layer on the first semiconductor material relative to the oxide layer on the second semiconductor material;
annealing the substrate to react the first metal-containing layer with the first semiconductor material;
removing the oxide layer from the second semiconductor material;
depositing a second metal-containing layer on the second semiconductor material; and
annealing the substrate to react the second metal-containing layer with the second semiconductor material,
wherein the first metal-containing layer contains ruthenium (Ru) metal, platinum (Pt) metal, cobalt (Co) metal, nickel (Ni) metal, palladium (Pd) metal, molybdenum (Mo) metal, tungsten (W) metal, vanadium (V) metal, or a combination thereof, and wherein the second metal-containing layer includes titanium (Ti) metal, nickel (Ni) metal, NiPt alloy, cobalt (Co) metal, molybdenum (Mo) metal, tungsten (W) metal, vanadium (V) metal, or a combination thereof.
11. The method of claim 10 , wherein the first semiconductor material includes doped SiGe or doped Ge and the second semiconductor material includes doped Si.
12. The method of claim 10 , wherein the substrate includes a positive-channel field emission transistor (PFET) contact region that contains the first semiconductor material and a negative-channel field emission transistor (NFET) contact region that includes the second semiconductor material.
13. The method of claim 1 , wherein the first semiconductor material is doped with boron (B), gallium (Ga), or aluminum (Al), and the second semiconductor material is doped with phosphorus (P), antimony (Sb), arsenic (As), or bismuth (Bi).
14. The method of claim 10 , wherein the first semiconductor material is doped with boron (B), gallium (Ga), or aluminum (Al), and the second semiconductor material is doped with phosphorus (P), antimony (Sb), arsenic (As), or bismuth (Bi).