3D semiconductor package including memory array

1. A semiconductor device comprising:

a memory array comprising:

a gate dielectric layer contacting a first word line and a second word line; and

an oxide semiconductor (OS) layer contacting a source line and a bit line, wherein the gate dielectric layer is disposed between the OS layer and each of the first word line and the second word line;

an interconnect structure over the memory array, wherein a distance between the second word line and the interconnect structure is less than a distance between the first word line and the interconnect structure; and

an integrated circuit die bonded to the interconnect structure opposite the memory array, wherein the integrated circuit die is bonded to the interconnect structure by dielectric-to-dielectric bonds and metal-to-metal bonds.

2. The semiconductor device of claim 1 , wherein a length of the first word line is greater than a length of the second word line.

3. The semiconductor device of claim 1 , wherein a front-side interconnect structure of the integrated circuit die is bonded to the interconnect structure.

4. The semiconductor device of claim 1 , wherein a backside of the integrated circuit die is bonded to the interconnect structure.

5. The semiconductor device of claim 4 , wherein the integrated circuit die comprises a through substrate via extending through a semiconductor substrate, the through substrate via electrically coupling a source/drain region of the integrated circuit die to the interconnect structure.

6. The semiconductor device of claim 1 , wherein the interconnect structure comprises a first contact electrically coupling the first word line to the integrated circuit die, the first contact extending from the first word line to the integrated circuit die.

7. The semiconductor device of claim 1 , further comprising a second integrated circuit die hybrid bonded to the interconnect structure adjacent the integrated circuit die.

8. A device comprising:

a logic die comprising a semiconductor substrate;

an interconnect structure over the logic die; and

a memory array over the interconnect structure, the memory array comprising:

a first memory cell comprising a first portion of a gate dielectric layer contacting a first word line; and

a second memory cell comprising a second portion of the gate dielectric layer contacting a second word line, wherein the second memory cell is disposed further from the interconnect structure than the first memory cell in a first direction perpendicular to a major surface of the semiconductor substrate, wherein the second word line has a length in a second direction perpendicular to the first direction greater than a length of the first word line in the second direction, and wherein the logic die comprises circuits configured to perform read and write operations in the memory array.

9. The device of claim 8 , wherein the logic die is bonded to the interconnect structure by dielectric-to-dielectric and metal-to-metal bonds.

10. The device of claim 8 , wherein the logic die comprises a front-side interconnect structure, and wherein the front-side interconnect structure is bonded to the interconnect structure.

11. The device of claim 8 , wherein a backside of the logic die is bonded to the interconnect structure.

12. The device of claim 11 , wherein the logic die comprises a through substrate via electrically coupled to a source/drain region, wherein the through substrate via extends through a semiconductor substrate of the logic die, and wherein the semiconductor substrate and the through substrate via are bonded to the interconnect structure.

13. The device of claim 12 , wherein the interconnect structure comprises a contact extending from the through substrate via to the first word line.

14. A method comprising:

forming a memory array, forming the memory array comprising:

forming a multi-layer stack over a substrate, the multi-layer stack comprising alternating conductive layers and dielectric layers;

patterning a first trench extending through the multi-layer stack;

depositing a gate dielectric layer along sidewalls and a bottom surface of the first trench, wherein the gate dielectric layer is deposited in contact with a first sidewall of a first conductive layer of the conductive layers;

depositing an oxide semiconductor (OS) layer over the gate dielectric layer;

forming a first interconnect structure over the memory array; and

bonding an integrated circuit device to the first interconnect structure using dielectric-to-dielectric bonding and metal-to-metal bonding.

15. The method of claim 14 , further comprising performing a read/write operation in the memory array, wherein the integrated circuit device controls the read/write operation.

16. The method of claim 14 , wherein a backside of the integrated circuit device is bonded to the first interconnect structure.

17. The method of claim 14 , wherein a plurality of integrated circuit devices on a wafer are bonded to the first interconnect structure, the plurality of integrated circuit devices comprising the integrated circuit device, wherein the method further comprises dicing the memory array and the wafer.

18. The method of claim 14 , wherein forming the memory array further comprises etching the conductive layers and the dielectric layers to form a staircase structure, wherein the conductive layers and the dielectric layers have decreasing lengths in a direction away from the substrate.

19. The method of claim 18 , wherein the first interconnect structure is formed over the memory array opposite the substrate.

20. The method of claim 14 , wherein bonding the integrated circuit device to the first interconnect structure comprises bonding a front-side interconnect structure of the integrated circuit device to the first interconnect structure.