Semiconductor device having plurality of 2T2C DRAM memory cells
An object is to shorten the time for rewriting data in memory cells. A memory module includes a first memory cell, a second memory cell, a selection transistor, and a wiring WBL 1 . The first memory cell includes a first memory node. The second memory cell includes a second memory node. One end of the first memory cell is electrically connected to the wiring WBL 1 through the selection transistor. The other end of the first memory cell is electrically connected to one end of the second memory cell. The other end of the second memory cell is electrically connected to the wiring WBL 1 . When the selection transistor is on, data in the first memory node is rewritten by a signal supplied through the selection transistor to the wiring WBL 1 . When the selection transistor is off, data in the first memory node is rewritten by a signal supplied through the second memory node to the wiring WBL 1.
1. A semiconductor device comprising:
a first semiconductor and a first insulator having a region surrounding the first semiconductor;
a second semiconductor having a region surrounding the first insulator;
a second insulator having a region surrounding the second semiconductor;
a first conductor and a second conductor each having a region surrounding the second insulator; and
a third insulator between the first conductor and the second conductor,
wherein the second conductor is provided over the first conductor.
2. The semiconductor device according to claim 1 , wherein each of the first semiconductor and the second semiconductor includes a metal oxide.
3. The semiconductor device according to claim 1 , wherein each of the first semiconductor and the second semiconductor includes silicon.
4. The semiconductor device according to claim 1 , wherein the first conductor functions as a rewrite word line.
5. The semiconductor device according to claim 1 , wherein the second conductor functions as a read word line.
6. A semiconductor device comprising:
a first semiconductor and a first insulator having a region surrounding the first semiconductor;
a second semiconductor having a region surrounding the first insulator;
a second insulator having a region surrounding the second semiconductor;
a first conductor and a second conductor each having a region surrounding the second insulator; and
a third insulator between the first conductor and the second conductor,
wherein a width of the second conductor is larger than a width of the first conductor, and
wherein the second conductor is provided over the first conductor.
7. The semiconductor device according to claim 6 , wherein each of the first semiconductor and the second semiconductor includes a metal oxide.
8. The semiconductor device according to claim 6 , wherein each of the first semiconductor and the second semiconductor includes silicon.
9. The semiconductor device according to claim 6 , wherein the first conductor functions as a rewrite word line.
10. The semiconductor device according to claim 6 , wherein the second conductor functions as a read word line.