High temperature micro-zone electrostatic chuck

1. A substrate support assembly, comprising:

a first ceramic plate having a workpiece supporting surface and a bottom surface, the first ceramic plate having a plurality of secondary heaters each forming a plurality of micro zones;

a second ceramic plate having an upper surface and a lower surface;

a first metal bonding layer disposed between the bottom surface of the first ceramic plate and the upper surface of the second ceramic plate;

a third ceramic plate having an top portion and a bottom portion, the third ceramic plate having primary heaters; and

a second metal bonding layer disposed between the lower surface of the second ceramic plate and the top portion of the third ceramic plate.

2. The substrate support assembly of claim 1 wherein the primary heaters have four separately controlled zones.

3. The substrate support assembly of claim 2 wherein the second ceramic plate further comprises:

a cavity having an insert disposed therein, wherein the insert is configured to accept a fastener.

4. The substrate support assembly of claim 1 , further comprising:

a cooling base having a upper portion, the upper portion of the cooling base disposed below the third ceramic plate; and

an insulating bond is disposed between the third ceramic plate and the cooling base, wherein a thermal interface between the third ceramic plate and the cooling base permits up to a 300 degrees Celsius temperature differential between the third ceramic plate and the cooling base without bowing or cracking the third ceramic plate.

5. The substrate support assembly of claim 4 wherein the substrate support assembly is configured to have a maximum temperature differential of up to about 300° C. between the third ceramic plate and the cooling base.

6. The substrate support assembly of claim 4 wherein the cooling base is an RF electrode.

7. The substrate support assembly of claim 1 wherein the first metal bonding layer is an RF electrode and the wherein the first metal bonding layer is coupled to an RF power source.

8. The substrate support assembly of claim 1 wherein the first metal bonding layer may has a thickness ranging between about 0.025 mm to about 2 mm.

9. The substrate support assembly of claim 8 wherein the first metal bonding layer and the second metal bonding layer each having a thickness between about 0.1 mm and about 0.6 mm.

10. The substrate support assembly of claim 1 wherein there are at least 150 separate secondary heaters and the secondary heaters are up to about 2 mm from the an outer edge of the first ceramic plate.

11. The substrate support assembly of claim 1 wherein the secondary heaters in the first ceramic plate is less than about 3 mm from a workpiece surface.

12. The substrate support assembly of claim 1 wherein the primary heaters have one or more primary heater zones, and the secondary heaters form a plurality of micro zones, wherein a number of micro zones are an order of magnitude than a number or primary heater zones and each individual mircrozone is in one and only one of the primary heater zones.

13. A processing chamber comprising:

a body having walls and a lid defining an interior processing region;

a substrate support assembly disposed in the interior processing region, the substrate support assembly comprising:

a first ceramic plate having a workpiece supporting surface and a bottom surface, the first ceramic plate having a plurality of secondary heaters each forming a plurality of micro zones;

a second ceramic plate having an upper surface and a lower surface;

a first metal bonding layer disposed between the bottom surface of the first ceramic plate and the upper surface of the second ceramic plate;

a third ceramic plate having an top portion and a bottom portion, the third ceramic plate having primary heaters; and

a second metal bonding layer disposed between the lower surface of the second ceramic plate and the top portion of the third ceramic plate.

14. The processing chamber of claim 13 wherein first metal bond is an RF electrode and the first metal bonding layer is coupled to an RF power source.

15. The processing chamber of claim 13 wherein the primary heaters have four separately controlled zones.

16. The processing chamber of claim 13 , further comprising:

a cooling base having a upper portion, the upper portion of the cooling base disposed below the third ceramic plate; and

an insulating bond is disposed between the third ceramic plate and the cooling base, wherein a thermal interface between the third ceramic plate and the cooling base permits up to a 300 degrees Celsius temperature differential between the third ceramic plate and the cooling base without bowing or cracking the third ceramic plate.

17. The processing chamber of claim 16 wherein the substrate support assembly is configured to have a maximum temperature differential of up to about 300° C. between the third ceramic plate and the cooling base.

18. The processing chamber of claim 16 wherein the secondary heaters in the first ceramic plate is less than about 3 mm from a workpiece surface.

19. The processing chamber of claim 16 wherein the secondary heaters in the first ceramic plate is less than about 2 mm from the an outer edge of the first ceramic plate.

20. The processing chamber of claim 16 wherein the primary heaters have one or more primary heater zones, and the secondary heaters form a plurality of micro zones, wherein a number of micro zones are an order of magnitude than a number or primary heater zones and each individual mircrozone is in one and only one of the primary heater zones.