Semiconductor memory device

1. A semiconductor memory device comprising:

a substrate;

a plurality of first word lines that are arranged in a first direction intersecting with a surface of the substrate;

a first select gate line that extends in a second direction intersecting with the first direction, the first select gate line being disposed at a position overlapping with the plurality of first word lines viewed from the first direction;

a second select gate line that extends in the second direction, the second select gate line being disposed at a position overlapping with the plurality of first word lines viewed from the first direction, the second select gate line being arranged with the first select gate line in the second direction;

a first semiconductor column that extends in the first direction, the first semiconductor column being opposed to the plurality of first word lines and the first select gate line;

a second semiconductor column that extends in the first direction, the second semiconductor column being opposed to the plurality of first word lines and the second select gate line;

a first bit line that extends in a third direction intersecting with the first direction and the second direction, the first bit line being disposed at a position overlapping with the first semiconductor column viewed from the first direction;

a second bit line that extends in the third direction, the second bit line being disposed at a position overlapping with the second semiconductor column viewed from the first direction;

a first transistor electrically connected to the first select gate line; and

a second transistor electrically connected to the second select gate line.

2. The semiconductor memory device according to claim 1 , further comprising:

a first voltage output circuit electrically connected to the first select gate line; and

a second voltage output circuit electrically connected to the second select gate line, wherein

the first transistor is disposed on a current path between the first voltage output circuit and the first select gate line, and the first transistor is not disposed on a current path between the second voltage output circuit and the second select gate line, and

the second transistor is disposed on the current path between the second voltage output circuit and the second select gate line, and the second transistor is not disposed on the current path between the first voltage output circuit and the first select gate line.

3. The semiconductor memory device according to claim 1 , wherein

the semiconductor memory device is configured to simultaneously supply different voltages to the first select gate line and the second select gate line.

4. The semiconductor memory device according to claim 1 , wherein

at a first timing in a first read operation:

a first voltage is supplied to the first select gate line; and

the first voltage is supplied to the second select gate line;

at a second timing in a second read operation:

the first voltage is supplied to the first select gate line; and

a second voltage smaller than the first voltage is supplied to the second select gate line.

5. The semiconductor memory device according to claim 4 , further comprising:

a third select gate line that extends in the second direction, the third select gate line being disposed at a position overlapping with the plurality of first word lines viewed from the first direction, the third select gate line being arranged with the first select gate line in the third direction;

a fourth select gate line that extends in the second direction, the fourth select gate line being disposed at a position overlapping with the plurality of first word lines viewed from the first direction, the fourth select gate line being arranged with the third select gate line in the second direction, the fourth select gate line being arranged with the second select gate line in the third direction;

a third semiconductor column that extends in the first direction, the third semiconductor column being opposed to the plurality of first word lines and the third select gate line;

a fourth semiconductor column that extends in the first direction, the fourth semiconductor column being opposed to the plurality of first word lines and the fourth select gate line;

a third transistor electrically connected to the third select gate line; and

a fourth transistor electrically connected to the fourth select gate line, wherein

the semiconductor memory device is configured to simultaneously supply different voltages to the first select gate line and the second select gate line and different voltages to the third select gate line and the fourth select gate line.

6. The semiconductor memory device according to claim 5 , wherein

at the first timing in the first read operation:

the second voltage is supplied to the third select gate line; and

the second voltage is supplied to the fourth select gate line, and

at the second timing in the second read operation:

the second voltage is supplied to the third select gate line; and

the first voltage is supplied to the fourth select gate line.

7. The semiconductor memory device according to claim 4 , further comprising:

a plurality of second word lines arranged in the first direction, the plurality of second word lines being arranged with the plurality of first word lines in the third direction, the plurality of second word lines being disposed at positions overlapping with the first bit line and the second bit line viewed from the first direction;

a fifth select gate line that extends in the second direction, the fifth select gate line being disposed at a position overlapping with the plurality of second word lines viewed from the first direction;

a sixth select gate line that extends in the second direction, the sixth select gate line being disposed at a position overlapping with the plurality of second word lines viewed from the first direction, the sixth select gate line being arranged with the fifth select gate line in the second direction;

a fifth semiconductor column that extends in the first direction, the fifth semiconductor column being opposed to the plurality of second word lines and the fifth select gate line; and

a sixth semiconductor column that extends in the first direction, the sixth semiconductor column being opposed to the plurality of second word lines and the sixth select gate line, wherein

the semiconductor memory device is configured to simultaneously supply different voltages to the first select gate line and the second select gate line and different voltages to the fifth select gate line and the sixth select gate line.

8. The semiconductor memory device according to claim 7 , wherein

at the first timing in the first read operation:

the second voltage is supplied to the fifth select gate line; and

the second voltage is supplied to the sixth select gate line, and

at a third timing in a third read operation:

the first voltage is supplied to the first select gate line;

the second voltage is supplied to the second select gate line;

the second voltage is supplied to the fifth select gate line; and

the first voltage is supplied to the sixth select gate line.

9. The semiconductor memory device according to claim 8 , wherein

one of the plurality of first word lines is a third word line;

another one of the plurality of first word lines different from the third word line is a fourth word line;

one of the plurality of second word lines is a fifth word line; and

another one of the plurality of second word lines different from the fifth word line is a sixth word line,

at the first timing in the first read operation:

a third voltage is supplied to the third word line; and

a fourth voltage larger than the third voltage is supplied to the fourth word line,

at the third timing in the third read operation:

the third voltage is supplied to the third word line;

the fourth voltage is supplied to the fourth word line;

a fifth voltage smaller than the fourth voltage is supplied to the fifth word line; and

the fourth voltage is supplied to the sixth word line.

10. The semiconductor memory device according to claim 9 , wherein

the third word line is an n-th (n is a positive integer of 1 or more) conductive layer counted from one side in the first direction among the plurality of first word lines, and

the fifth word line is the n-th conductive layer counted from the one side in the first direction among the plurality of second word lines.

11. The semiconductor memory device according to claim 9 , wherein

the third word line is an n-th (n is a positive integer of 1 or more) conductive layer counted from one side in the first direction among the plurality of first word lines,

the fifth word line is an m-th (m is a positive integer of 1 or more) conductive layer counted from the one side in the first direction among the plurality of second word lines, and

the n differs from the m.

12. The semiconductor memory device according to claim 9 , wherein

the fifth voltage is equal to the third voltage.

13. The semiconductor memory device according to claim 9 , wherein

the fifth voltage differs from the third voltage.

14. The semiconductor memory device according to claim 1 , wherein

at least a part of the plurality of first word lines each include a first conductive layer that extends in the second direction, and

the first conductive layer is opposed to the first semiconductor column and the second semiconductor column.

15. The semiconductor memory device according to claim 1 , wherein

at least a part of the plurality of first word lines each include:

a second conductive layer that extends in the second direction, the second conductive layer being opposed to the first semiconductor column; and

a third conductive layer that extends in the second direction, the third conductive layer being opposed to the second semiconductor column, wherein

the semiconductor memory device includes a connection wiring that electrically conducts the second conductive layer and the third conductive layer.

16. The semiconductor memory device according to claim 1 , further comprising:

a third select gate line that extends in the second direction, the third select gate line being disposed at a position overlapping with the plurality of first word lines viewed from the first direction, the third select gate line being arranged with the first select gate line in the third direction;

a fourth select gate line that extends in the second direction, the fourth select gate line being disposed at a position overlapping with the plurality of first word lines viewed from the first direction, the fourth select gate line being arranged with the third select gate line in the second direction, the fourth select gate line being arranged with the second select gate line in the third direction;

a third semiconductor column that extends in the first direction, the third semiconductor column being opposed to the plurality of first word lines and the third select gate line;

a fourth semiconductor column that extends in the first direction, the fourth semiconductor column being opposed to the plurality of first word lines and the fourth select gate line;

a third transistor electrically connected to the third select gate line; and

a fourth transistor electrically connected to the fourth select gate line, wherein

the semiconductor memory device is configured to simultaneously supply different voltages to the first select gate line and the second select gate line and different voltages to the third select gate line and the fourth select gate line.

17. The semiconductor memory device according to claim 1 , further comprising:

a plurality of second word lines arranged in the first direction, the plurality of second word lines being arranged with the plurality of first word lines in the third direction, the plurality of second word lines being disposed at positions overlapping with the first bit line and the second bit line viewed from the first direction;

a fifth select gate line that extends in the second direction, the fifth select gate line being disposed at a position overlapping with the plurality of second word lines viewed from the first direction;

a sixth select gate line that extends in the second direction, the sixth select gate line being disposed at a position overlapping with the plurality of second word lines viewed from the first direction, the sixth select gate line being arranged with the fifth select gate line in the second direction;

a fifth semiconductor column that extends in the first direction, the fifth semiconductor column being opposed to the plurality of second word lines and the fifth select gate line; and

a sixth semiconductor column that extends in the first direction, the sixth semiconductor column being opposed to the plurality of second word lines and the sixth select gate line, wherein

the semiconductor memory device is configured to simultaneously supply different voltages to the first select gate line and the second select gate line and different voltages to the fifth select gate line and the sixth select gate line.